Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In) (2015)
- Authors:
- USP affiliated authors: OLIVEIRA, LUIZ NUNES DE - IFSC ; SILVA, JUAREZ LOPES FERREIRA DA - IQSC
- Unidades: IFSC; IQSC
- Assunto: FÍSICA TEÓRICA
- Language: Inglês
- Imprenta:
- Publisher: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC
- Publisher place: São Carlos
- Date published: 2015
- Source:
- Título: Livro de resumos
- Conference titles: Semana Integrada do Instituto de Física de São Carlos - SIFSC
-
ABNT
SABINO, Fernando Pereira et al. Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In). 2015, Anais.. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC, 2015. Disponível em: https://repositorio.usp.br/directbitstream/77c2a048-20d7-47eb-a6ef-e75d7ed729c1/P15948.pdf. Acesso em: 27 dez. 2025. -
APA
Sabino, F. P., Besse, R., Oliveira, L. N. de, Wei, S. H., & Silva, J. L. F. da. (2015). Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In). In Livro de resumos. São Carlos: Universidade de São Paulo - USP, Instituto de Física de São Carlos - IFSC. Recuperado de https://repositorio.usp.br/directbitstream/77c2a048-20d7-47eb-a6ef-e75d7ed729c1/P15948.pdf -
NLM
Sabino FP, Besse R, Oliveira LN de, Wei SH, Silva JLF da. Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In) [Internet]. Livro de resumos. 2015 ;[citado 2025 dez. 27 ] Available from: https://repositorio.usp.br/directbitstream/77c2a048-20d7-47eb-a6ef-e75d7ed729c1/P15948.pdf -
Vancouver
Sabino FP, Besse R, Oliveira LN de, Wei SH, Silva JLF da. Origin and tuning of the band gaps in transparent conducting oxides: the example of M2O3 (M = Al, Ga, In) [Internet]. Livro de resumos. 2015 ;[citado 2025 dez. 27 ] Available from: https://repositorio.usp.br/directbitstream/77c2a048-20d7-47eb-a6ef-e75d7ed729c1/P15948.pdf - Structural and electronic properties of bulk graphite: a DFT investigation within van der Wall corrections
- Multi-compounds transparent conducting oxides: the example of In2O3-SnO2
- First-principles investigation of the adsorption properties of TM clusters on graphene
- Structural and electronic properties of bulk graphite: a DFT investigation within van der wall corrections
- Optical and fundamental band gaps disparity of the In2O3 and SnO2 systems revisited
- <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides
- Roles of the cation atomic radius and s-d hybridization in the stability of the gallia Ga2O3 structure
- Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12
- Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems
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