Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems (2017)
- Authors:
- USP affiliated authors: OLIVEIRA, LUIZ NUNES DE - IFSC ; SILVA, JUAREZ LOPES FERREIRA DA - IQSC
- Unidades: IFSC; IQSC
- DOI: 10.1088/1361-648X/aa4e8c
- Subjects: ÓPTICA; FÍSICA TEÓRICA
- Keywords: Optical properties; Transparent conducting oxides; In2O3 and SnO2; Density functional theory
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Journal of Physics: Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 29, n. 8, p. 085501-1-085501-7, Mar. 2017
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SABINO, Fernando P. et al. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems. Journal of Physics: Condensed Matter, v. 29, n. 8, p. 085501-1-085501-7, 2017Tradução . . Disponível em: https://doi.org/10.1088/1361-648X/aa4e8c. Acesso em: 24 abr. 2024. -
APA
Sabino, F. P., Oliveira, L. N. de, Wei, S. -H., & Silva, J. L. F. da. (2017). Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems. Journal of Physics: Condensed Matter, 29( 8), 085501-1-085501-7. doi:10.1088/1361-648X/aa4e8c -
NLM
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems [Internet]. Journal of Physics: Condensed Matter. 2017 ; 29( 8): 085501-1-085501-7.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1088/1361-648X/aa4e8c -
Vancouver
Sabino FP, Oliveira LN de, Wei S-H, Silva JLF da. Optical and fundamental band gaps disparity in transparent conducting oxides: new findings for the In2O3 and SnO2 systems [Internet]. Journal of Physics: Condensed Matter. 2017 ; 29( 8): 085501-1-085501-7.[citado 2024 abr. 24 ] Available from: https://doi.org/10.1088/1361-648X/aa4e8c - <the> role of the sp-d hybridization in the crystal structure of transparent conduction oxides: the example of the 'AIND.2''OIND.3' (A=Al, Ga, In) oxides
- Tuning the optical bandgap in multi-cation compound transparent conducting-oxides: the examples of In2ZnO4 and In4Sn3O12
- Roles of the cation atomic radius and s-d hybridization in the stability of the gallia Ga2O3 structure
- Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3 (M = Al, Ga, In) oxides
- Properties of 'Pt IND.n' n=1-6 on graphene
- Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al,Ga,In)
- Origin of and tuning the optical and fundamental band gaps in transparent conducting oxides: the case of M2O3 (M = Al, Ga, In)
- Graphene-supported small transition-metal clusters: a density functional theory investigation within van der Waals corrections
- Comparative study of van der Waals corrections to the bulk properties of graphite
- Why does Ga2O3 crystallize in the gallia structure, while Al2O3 and In2O3 do not?
Informações sobre o DOI: 10.1088/1361-648X/aa4e8c (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 | PROD025832_2801820.pdf |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
