Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation (2013)
- Authors:
- USP affiliated authors: SILVA, EUZI CONCEICAO FERNANDES DA - IF ; QUIVY, ALAIN ANDRE - IF ; BINDILATTI, VALDIR - IF
- Unidade: IF
- Subjects: FOTODETECTORES; ÁTOMOS
- Language: Inglês
- Imprenta:
- Source:
- Título: JOURNAL OF APPLIED PHYSICS
- Volume/Número/Paginação/Ano: v. 114, n. 8, p. 083708, ago. 2013
-
ABNT
MAIA, Álvaro Diego Bernardino et al. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, v. 114, n. 8, p. 083708, 2013Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf. Acesso em: 14 mar. 2026. -
APA
Maia, Á. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2013). Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation. JOURNAL OF APPLIED PHYSICS, 114( 8), 083708. Recuperado de https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf -
NLM
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2026 mar. 14 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf -
Vancouver
Maia ÁDB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation [Internet]. JOURNAL OF APPLIED PHYSICS. 2013 ; 114( 8): 083708.[citado 2026 mar. 14 ] Available from: https://repositorio.usp.br/directbitstream/431f6fc1-75d5-4f3e-b13e-0af926fa3796/1.4818610.pdf - The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots
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- Growth, processing and testing of infrared photodetectors based on quantum dots
- The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots
- High density InAlAs and InAs/InAlAs quantum dots for infrared photodetectors
- Estudos magnetico-oticos das transicoes excitonicas de pocos quanticos de 'GA''AS' / 'GAALAS' com modulacao de dopagem tipo n
- Calculation of the electron energy levels of InAs/GaAs quantum dots for application in infrared photodetectors
- Segregation of In atoms during strained and unstrained epitaxy of InGaAs on (001) surfaces
- In-segregation measurements by RHEED during growth: comparison between vicinal and nominal substrat
- High-efficiency infrared photodetectors based on quantum wells grown by molecular-beam epitaxy
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