The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots (2012)
- Authors:
- USP affiliated authors: QUIVY, ALAIN ANDRE - IF ; SILVA, EUZI CONCEICAO FERNANDES DA - IF ; BINDILATTI, VALDIR - IF
- Unidade: IF
- Assunto: ÓPTICA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: JOURNAL OF PHYSICS D: APPLIED PHYSICS
- Volume/Número/Paginação/Ano: v.45, p. 225104, mai.2012
-
ABNT
MAIA, A D B et al. The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots. JOURNAL OF PHYSICS D: APPLIED PHYSICS, v. 45, p. 225104, 2012Tradução . . Disponível em: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf. Acesso em: 22 jan. 2026. -
APA
Maia, A. D. B., Aquino, V. M. de, Dias, I. F. L., Silva, E. C. F. da, Quivy, A. A., & Bindilatti, V. (2012). The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots. JOURNAL OF PHYSICS D: APPLIED PHYSICS, 45, 225104. Recuperado de http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf -
NLM
Maia ADB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2012 ;45 225104.[citado 2026 jan. 22 ] Available from: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf -
Vancouver
Maia ADB, Aquino VM de, Dias IFL, Silva ECF da, Quivy AA, Bindilatti V. The influence of different indium-composition profiles on the electronic structure of lens-shaped 'IN' IND. x' 'GA' IND. 1'−'ANTIND.x 'AS' quantum dots [Internet]. JOURNAL OF PHYSICS D: APPLIED PHYSICS. 2012 ;45 225104.[citado 2026 jan. 22 ] Available from: http://iopscience.iop.org/0022-3727/45/22/225104/pdf/0022-3727_45_22_225104.pdf - Simulation of the electronic properties of 'IN' IND. x''GA' IND. 1−x' 'AS' quantum dots and their wetting layer under the influence of indium segregation
- Simulation of the dark current of quantum-well infrared photodetectors
- Effects of confinement on the electron-phonon interaction in 'AL'IND. 0,18' 'GA'IND. 0,82''AS'/'GA''AS' quantum wells
- Scattering processes on a quasi-two-dimensional electron gas in GaAs/InGaAs selectively doped quantum wells with embedded quantum dots
- Studies of the radiative recombination processes in 'BE' - 'GAMA' doped 'GA''AS' structures
- Efficient method for calculating electronic bound states in arbitrary one-dimensional quantum wells
- Modeling the 3D 'IN' profile of 'IN' IND. x''GA' IND. 1−x''AS'/'GA''AS' quantum dots
- Strong photovoltaic effect in high-density InAlAs and InAs/InAlAs quantum-dot infrared photodetectors
- Mid-Infrared (3-5 µm) photodetection in AlGaAs/GaAs QWIPs using photo-induced noise
- Growth, processing and testing of infrared photodetectors based on quantum dots
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