Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs (2012)
- Authors:
- USP affiliated authors: BARBOSA, MARCEL DUPRET LOPES - IF ; MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- DOI: 10.1016/j.nimb.2011.07.044
- Subjects: RADIAÇÃO IONIZANTE; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Volume/Número/Paginação/Ano: v.273, p.80-82, jul.2012
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
CIRNE, Karin Huscher et al. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, v. 273, p. 80-82, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.nimb.2011.07.044. Acesso em: 12 fev. 2026. -
APA
Cirne, K. H., Silveira, M. A. G., Santos, R. B. B., Gimenez, S. P., Seixas jr, L. E., Melo, W. R. de, et al. (2012). Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 273, 80-82. doi:10.1016/j.nimb.2011.07.044 -
NLM
Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2026 fev. 12 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044 -
Vancouver
Cirne KH, Silveira MAG, Santos RBB, Gimenez SP, Seixas jr LE, Melo WR de, Lima JA de, Barbosa MDL, Medina NH, Added N, Tabacniks MH. Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs [Internet]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2012 ;273 80-82.[citado 2026 fev. 12 ] Available from: https://doi.org/10.1016/j.nimb.2011.07.044 - Performance of electronic devices submitted to X-rays and high energy proton beams
- Performance of electronic devices submitted to X-rays and high energy proton beams.
- Radiation effects for high-energy protons and x-ray in integrated circuits
- Effects of total dose of ionizing radiation on integrated circuits
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Development of a system for studies on radiation effects in electronic devices
- Measurement of a semiconductors passivation layer thickness
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- Trace element concentrations from Sao Francisco River - PR analyzed with PIXE technique
Informações sobre o DOI: 10.1016/j.nimb.2011.07.044 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
1-s2.0-S0168583X11006884-... | Direct link |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
