Effects of total dose of ionizing radiation on integrated circuits (2011)
- Authors:
- USP affiliated authors: MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- Assunto: RADIAÇÃO IONIZANTE
- Language: Inglês
- Imprenta:
- Publisher: SBF
- Publisher place: Foz do Iguaçu
- Date published: 2011
- Source:
- Título: Resumo
- Conference titles: Encontro de Física
-
ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Effects of total dose of ionizing radiation on integrated circuits. 2011, Anais.. Foz do Iguaçu: SBF, 2011. Disponível em: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0340-1.pdf. Acesso em: 09 maio 2025. -
APA
Silveira, M. A. G. da, Added, N., Barbosa, M. D. L., Medina, N. H., Tabacniks, M. H., Cirne, K. H., et al. (2011). Effects of total dose of ionizing radiation on integrated circuits. In Resumo. Foz do Iguaçu: SBF. Recuperado de http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0340-1.pdf -
NLM
Silveira MAG da, Added N, Barbosa MDL, Medina NH, Tabacniks MH, Cirne KH, Gimenez S, Santos RBB, Lima JA de, Seixas Junior LE, Melo W. Effects of total dose of ionizing radiation on integrated circuits [Internet]. Resumo. 2011 ;[citado 2025 maio 09 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0340-1.pdf -
Vancouver
Silveira MAG da, Added N, Barbosa MDL, Medina NH, Tabacniks MH, Cirne KH, Gimenez S, Santos RBB, Lima JA de, Seixas Junior LE, Melo W. Effects of total dose of ionizing radiation on integrated circuits [Internet]. Resumo. 2011 ;[citado 2025 maio 09 ] Available from: http://www.sbf1.sbfisica.org.br/eventos/enf/2011/sys/resumos/R0340-1.pdf - Radiation effects for high-energy protons and x-ray in integrated circuits
- Development of a system for studies on radiation effects in electronic devices
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Performance of electronic devices submitted to X-rays and high energy proton beams.
- Measurement of a semiconductors passivation layer thickness
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- A round robin characterisation of the thickness and composition of thin to ultra-thin AlNO films
- Trace element concentrations from Sao Francisco River - PR analyzed with PIXE technique
- Accurate traceable stopping power measurements for protons in 'AL', 'MO', 'CD' and 'SN', in the energy range of ion beam analysis
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