Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. (2011)
- Authors:
- USP affiliated authors: ADDED, NEMITALA - IF ; MEDINA, NILBERTO HEDER - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- Assunto: SEMICONDUTORES (FÍSICO-QUÍMICA)
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumo
- Conference titles: International Conference on Ion Beam Analysis
-
ABNT
CIRNE, Karin Huscher et al. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. 2011, Anais.. Itapema: IBA, 2011. Disponível em: http://www.if.ufrgs.br/iba2011/program/239.pdf. Acesso em: 12 fev. 2026. -
APA
Cirne, K. H., Lima, J. A. de, Seixas Jr, L. E., Silveira, M. A. G., Barbosa, M. D. L., Tabacniks, M. H., et al. (2011). Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. In Resumo. Itapema: IBA. Recuperado de http://www.if.ufrgs.br/iba2011/program/239.pdf -
NLM
Cirne KH, Lima JA de, Seixas Jr LE, Silveira MAG, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. [Internet]. Resumo. 2011 ;[citado 2026 fev. 12 ] Available from: http://www.if.ufrgs.br/iba2011/program/239.pdf -
Vancouver
Cirne KH, Lima JA de, Seixas Jr LE, Silveira MAG, Barbosa MDL, Tabacniks MH, Added N, Medina NH, Gimenez SP, Melo W. Comparative study of the proton beam effects between the conventional and circular gate MOSFETs. [Internet]. Resumo. 2011 ;[citado 2026 fev. 12 ] Available from: http://www.if.ufrgs.br/iba2011/program/239.pdf - Performance of electronic devices submitted to X-rays and high energy proton beams.
- Radiation effects for high-energy protons and x-ray in integrated circuits
- Effects of total dose of ionizing radiation on integrated circuits
- Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries.
- Development of a system for studies on radiation effects in electronic devices
- Measurement of a semiconductors passivation layer thickness
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs
- Performance of electronic devices submitted to X-rays and high energy proton beams
- Trace element concentrations from Sao Francisco River - PR analyzed with PIXE technique
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