Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. (2011)
- Authors:
- USP affiliated authors: MEDINA, NILBERTO HEDER - IF ; ADDED, NEMITALA - IF ; TABACNIKS, MANFREDO HARRI - IF
- Unidade: IF
- Assunto: RAIOS X
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumo
- Conference titles: Latin American Symposium on Nuclear Physics and Applications
-
ABNT
SILVEIRA, Marcilei Aparecida Guazzelli da et al. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. 2011, Anais.. Quito: LASNPA, 2011. Disponível em: http://www.lasnpa-quito2011.org/abstract_export.php?id=49. Acesso em: 12 fev. 2026. -
APA
Silveira, M. A. G. da, Medina, N. H., Added, N., Tabacniks, M. H., Santos, R. B., Cirne, K. H., et al. (2011). Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. In Resumo. Quito: LASNPA. Recuperado de http://www.lasnpa-quito2011.org/abstract_export.php?id=49 -
NLM
Silveira MAG da, Medina NH, Added N, Tabacniks MH, Santos RB, Cirne KH, Gimenez SP, Lima JAD, Seixas LE. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. [Internet]. Resumo. 2011 ;[citado 2026 fev. 12 ] Available from: http://www.lasnpa-quito2011.org/abstract_export.php?id=49 -
Vancouver
Silveira MAG da, Medina NH, Added N, Tabacniks MH, Santos RB, Cirne KH, Gimenez SP, Lima JAD, Seixas LE. Leakage current and threshold voltage alteration due to X-rays and proton beam in nMOSFETs with different geometries. [Internet]. Resumo. 2011 ;[citado 2026 fev. 12 ] Available from: http://www.lasnpa-quito2011.org/abstract_export.php?id=49 - Performance of electronic devices submitted to X-rays and high energy proton beams.
- Radiation effects for high-energy protons and x-ray in integrated circuits
- Effects of total dose of ionizing radiation on integrated circuits
- Comparative study of the proton beam effects between the conventional and circular gate MOSFETs.
- Development of a system for studies on radiation effects in electronic devices
- Measurement of a semiconductors passivation layer thickness
- Experimental setup for single event effects at the são paulo 8UD pelletron accelerator
- Comparative study of the proton beam effects between the conventional and circular-gate MOSFETs
- Performance of electronic devices submitted to X-rays and high energy proton beams
- Trace element concentrations from Sao Francisco River - PR analyzed with PIXE technique
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