Carbon-based defects in GaN: doping behaviour (2002)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Subjects: CRISTALOGRAFIA FÍSICA; ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physica Status Solidi B-Basic Research
- ISSN: 0370-1972
- Volume/Número/Paginação/Ano: v. 234, n. 4, p. 864-867, 2002
-
ABNT
RAMOS, L E et al. Carbon-based defects in GaN: doping behaviour. Physica Status Solidi B-Basic Research, v. 234, n. 4, p. 864-867, 2002Tradução . . Acesso em: 27 jan. 2026. -
APA
Ramos, L. E., Furthmuller, J., Leite, J. R., Scolfaro, L. M. R., & Bechstedt, F. (2002). Carbon-based defects in GaN: doping behaviour. Physica Status Solidi B-Basic Research, 234( 4), 864-867. -
NLM
Ramos LE, Furthmuller J, Leite JR, Scolfaro LMR, Bechstedt F. Carbon-based defects in GaN: doping behaviour. Physica Status Solidi B-Basic Research. 2002 ; 234( 4): 864-867.[citado 2026 jan. 27 ] -
Vancouver
Ramos LE, Furthmuller J, Leite JR, Scolfaro LMR, Bechstedt F. Carbon-based defects in GaN: doping behaviour. Physica Status Solidi B-Basic Research. 2002 ; 234( 4): 864-867.[citado 2026 jan. 27 ] - Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
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