Theoretical studies of thermodynamics, electronic and structural properties of zinc-blende 'Al IND.1-X' 'In IND.X' N alloys (2002)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Física da Matéria Condensada
-
ABNT
TELES, L. K. et al. Theoretical studies of thermodynamics, electronic and structural properties of zinc-blende 'Al IND.1-X' 'In IND.X' N alloys. 2002, Anais.. São Paulo: SBF, 2002. . Acesso em: 03 nov. 2024. -
APA
Teles, L. K., Scolfaro, L. M. R., Leite, J. R., Furthmüller, J., & Bechstedt, F. (2002). Theoretical studies of thermodynamics, electronic and structural properties of zinc-blende 'Al IND.1-X' 'In IND.X' N alloys. In Resumos. São Paulo: SBF. -
NLM
Teles LK, Scolfaro LMR, Leite JR, Furthmüller J, Bechstedt F. Theoretical studies of thermodynamics, electronic and structural properties of zinc-blende 'Al IND.1-X' 'In IND.X' N alloys. Resumos. 2002 ;[citado 2024 nov. 03 ] -
Vancouver
Teles LK, Scolfaro LMR, Leite JR, Furthmüller J, Bechstedt F. Theoretical studies of thermodynamics, electronic and structural properties of zinc-blende 'Al IND.1-X' 'In IND.X' N alloys. Resumos. 2002 ;[citado 2024 nov. 03 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
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- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
- Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
- Phase separation suppression in InGaN epitaxial layers due to biaxial strain
- Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations
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