Reply to the comment on the paper density functional theory for holes in semiconductors (1998)
- Authors:
- USP affiliated authors: SCOLFARO, LUISA MARIA RIBEIRO - IF ; LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Physical Review Letters
- Volume/Número/Paginação/Ano: v. 80, n. 14, p. 3160, 1998
-
ABNT
ENDERLEIN, R et al. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters, v. 80, n. 14, p. 3160, 1998Tradução . . Acesso em: 05 nov. 2024. -
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., & Leite, J. R. (1998). Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters, 80( 14), 3160. -
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 nov. 05 ] -
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR. Reply to the comment on the paper density functional theory for holes in semiconductors. Physical Review Letters. 1998 ; 80( 14): 3160.[citado 2024 nov. 05 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Energy levels due to n-type'GAMA'-doping in silicon
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
- Adsorption of Si and C atoms over SiC (111) surfaces
- Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
- Phase separation suppression in InGaN epitaxial layers due to biaxial strain
- Study of thermodynamic and strutural properties in strained cubic InGaN and AlGaN alloys through first-principles calculations
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