Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs (1998)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Trans Tech Publications
- Publisher place: Zuerich
- Date published: 1998
- Source:
- Título: Materials Science Forum
- Volume/Número/Paginação/Ano: v. 264-268, pt. 2, p. 1367-1370, 1998
- Conference titles: Silicon Carbide III-Nitrides and Related Materials International Conference
-
ABNT
TABATA, A et al. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. Zuerich: Trans Tech Publications. . Acesso em: 10 jan. 2026. , 1998 -
APA
Tabata, A., Enderlein, R., Lima, A. P., Leite, J. R., Lemos, V., Kaiser, S., et al. (1998). Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. Zuerich: Trans Tech Publications. -
NLM
Tabata A, Enderlein R, Lima AP, Leite JR, Lemos V, Kaiser S, Schikora D, Schoettker B, Koehler U, Lischka K. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. 1998 ; 264-268 1367-1370.[citado 2026 jan. 10 ] -
Vancouver
Tabata A, Enderlein R, Lima AP, Leite JR, Lemos V, Kaiser S, Schikora D, Schoettker B, Koehler U, Lischka K. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. 1998 ; 264-268 1367-1370.[citado 2026 jan. 10 ] - Deep-levels associated to chalcogen impurities in silicon
- Electronic structure of the point defects gap: 'V IND.P' and gap : ' O IND.P'
- 2D-3D transition in a parabolic quantum well
- Self-consistent one-electron states of substitutional and interstitial 5d transition-atom impurities in silicon
- Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN: Si
- Dynamical and thermodynamic properties of III-nitrides
- One-electron states induced by 3d transition metal impurities diamond
- Atomic and electronic structures of 'In IND.X' 'Ga IND.1-X' N quantum dots
- Optical studies on the incorporation of carbon as a dopant in cubic GaN
- Improving of the p-type doping by carbon in cubic GaN samples under Ga-rich growth conditions
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