Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs (1998)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Assunto: SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher: Trans Tech Publications
- Publisher place: Zuerich
- Date published: 1998
- Source:
- Título do periódico: Materials Science Forum
- Volume/Número/Paginação/Ano: v. 264-268, pt. 2, p. 1367-1370, 1998
- Conference titles: Silicon Carbide III-Nitrides and Related Materials International Conference
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ABNT
TABATA, A; ENDERLEIN, R; LIMA, A. P.; et al. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum[S.l: s.n.], 1998. -
APA
Tabata, A., Enderlein, R., Lima, A. P., Leite, J. R., Lemos, V., Kaiser, S., et al. (1998). Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. Zuerich: Trans Tech Publications. -
NLM
Tabata A, Enderlein R, Lima AP, Leite JR, Lemos V, Kaiser S, Schikora D, Schoettker B, Koehler U, Lischka K. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. 1998 ; 264-268 1367-1370. -
Vancouver
Tabata A, Enderlein R, Lima AP, Leite JR, Lemos V, Kaiser S, Schikora D, Schoettker B, Koehler U, Lischka K. Micro-Raman and electron microscopy analysis of cubic GaN layers on (001) GaAs. Materials Science Forum. 1998 ; 264-268 1367-1370. - Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Investigation of the real semiconductor laser structure by photoreflectance method
- Evidência da formação de fase minoritária com alto teor de In em crescimento MBE de 'In IND. X''Ga IND. 1-X'N
- Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy
- Elementary excitations of 2D gated electron gas
- Photoluminescence of cubic GaN/GaAs (100) grown by RF-MBE
- Raman spectroscopy of n-GaN in cubic phase
- Current research on semiconductor physics
- Estrutura eletronica do semicondutor diamante tipo p
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