Theoretical model of transition metal-shallow acceptor impurity pairs in silicon (1986)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Language: Português
- Source:
- Título: Mat Science Forum
- Volume/Número/Paginação/Ano: v.10-2, n.pt.1, p.55-60, 1986
- Conference titles: International Conference on Defects in Semiconductors
-
ABNT
ASSALI, Lucy Vitoria Credidio e LEITE, J. R. Theoretical model of transition metal-shallow acceptor impurity pairs in silicon. Mat Science Forum. [S.l.]: Instituto de Física, Universidade de São Paulo. . Acesso em: 24 jan. 2026. , 1986 -
APA
Assali, L. V. C., & Leite, J. R. (1986). Theoretical model of transition metal-shallow acceptor impurity pairs in silicon. Mat Science Forum. Instituto de Física, Universidade de São Paulo. -
NLM
Assali LVC, Leite JR. Theoretical model of transition metal-shallow acceptor impurity pairs in silicon. Mat Science Forum. 1986 ;10-2( pt.1): 55-60.[citado 2026 jan. 24 ] -
Vancouver
Assali LVC, Leite JR. Theoretical model of transition metal-shallow acceptor impurity pairs in silicon. Mat Science Forum. 1986 ;10-2( pt.1): 55-60.[citado 2026 jan. 24 ] - Optical properties of cubic InGaN epilayers grown by MBE
- Elementary excitations of modulation-doped quantum-wells
- Polaronic effects on the intra-donor 1s'SETA''2p POT. '= OU -'' transition energies in GaN structures
- Theoretical LEED parameters for the zinc-blende GaN (110) surface
- Deep-levels in diamond: the substitucional nitrogen and the simple neutrol vacancy
- Self-consistent band structure calculations by the variational cellular method
- Semiconductor physics: procedings of the 3 rd brazilian school of semiconductor physics
- Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Deep-levels associated to chalcogen impurities in silicon
- Ferromagnetism in the metallic phase of (Ga, Mn)N nanostructures
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