Electronic structure of cationic core excitons in ii-vi semiconductors (1988)
- Authors:
- USP affiliated author: LEITE, JOSE ROBERTO - IF
- School: IF
- Language: Português
- Source:
- Título do periódico: Journal of Physics and Chemistry of Solids
- Volume/Número/Paginação/Ano: v.49, n.8 , p.969-73, 1988
-
ABNT
CHACHAM, H; ALVES, J L A; SIQUEIRA, M L; LEITE, J. R. Electronic structure of cationic core excitons in ii-vi semiconductors. Journal of Physics and Chemistry of Solids[S.l.], v. 49, n. 8 , p. 969-73, 1988. -
APA
Chacham, H., Alves, J. L. A., Siqueira, M. L., & Leite, J. R. (1988). Electronic structure of cationic core excitons in ii-vi semiconductors. Journal of Physics and Chemistry of Solids, 49( 8 ), 969-73. -
NLM
Chacham H, Alves JLA, Siqueira ML, Leite JR. Electronic structure of cationic core excitons in ii-vi semiconductors. Journal of Physics and Chemistry of Solids. 1988 ;49( 8 ): 969-73. -
Vancouver
Chacham H, Alves JLA, Siqueira ML, Leite JR. Electronic structure of cationic core excitons in ii-vi semiconductors. Journal of Physics and Chemistry of Solids. 1988 ;49( 8 ): 969-73. - Raman spectroscopy of n-GaN in cubic phase
- Polarized resonant raman scattering of quantum-wells in the presence of applied gate voltages
- Raman spectroscopy of n-GaN in cubic phase
- Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate
- Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs
- Near band-edge optical properties of cubic GaN with and without carbon doping
- Propriedades eletronicas dos complexos ouro substitucional-metal de transicao intersticial em silicio
- Current research on semiconductor physics
- Hydrogen passivation of shallow acceptor levels in crystalline silicon
- Estrutura eletronica do semicondutor diamante tipo p
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