Electronic structure of cationic core excitons in ii-vi semiconductors (1988)
- Authors:
- Autor USP: LEITE, JOSE ROBERTO - IF
- Unidade: IF
- Language: Português
- Source:
- Título do periódico: Journal of Physics and Chemistry of Solids
- Volume/Número/Paginação/Ano: v.49, n.8 , p.969-73, 1988
-
ABNT
CHACHAM, H; ALVES, J L A; SIQUEIRA, M L; LEITE, J. R. Electronic structure of cationic core excitons in ii-vi semiconductors. Journal of Physics and Chemistry of Solids[S.l.], v. 49, n. 8 , p. 969-73, 1988. -
APA
Chacham, H., Alves, J. L. A., Siqueira, M. L., & Leite, J. R. (1988). Electronic structure of cationic core excitons in ii-vi semiconductors. Journal of Physics and Chemistry of Solids, 49( 8 ), 969-73. -
NLM
Chacham H, Alves JLA, Siqueira ML, Leite JR. Electronic structure of cationic core excitons in ii-vi semiconductors. Journal of Physics and Chemistry of Solids. 1988 ;49( 8 ): 969-73. -
Vancouver
Chacham H, Alves JLA, Siqueira ML, Leite JR. Electronic structure of cationic core excitons in ii-vi semiconductors. Journal of Physics and Chemistry of Solids. 1988 ;49( 8 ): 969-73. - Evidence of Fabry-Pérot oscillations in the emission spectra of deep centers in cubic GaN epitaxial layers
- Native surface defects at low-index reconstructed cubic GaN surfaces
- Investigation of the real semiconductor laser structure by photoreflectance method
- Evidência da formação de fase minoritária com alto teor de In em crescimento MBE de 'In IND. X''Ga IND. 1-X'N
- Overdamped electron plasma oscillations in cubic 'Al IND.X' 'Ga IND.1-X'N layers observed by raman scattering spectrocopy
- Elementary excitations of 2D gated electron gas
- Photoluminescence of cubic GaN/GaAs (100) grown by RF-MBE
- Raman spectroscopy of n-GaN in cubic phase
- Current research on semiconductor physics
- Estrutura eletronica do semicondutor diamante tipo p
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