Nitrogen antisite defect in zincblende-type boron nitride (1996)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1996
- Source:
- Título: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
-
ABNT
CASTINEIRA, J L P et al. Nitrogen antisite defect in zincblende-type boron nitride. 1996, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1996. . Acesso em: 14 mar. 2026. -
APA
Castineira, J. L. P., Alves, J. L., Leite, J. R., Scolfaro, L. M. R., & Enderlein, R. (1996). Nitrogen antisite defect in zincblende-type boron nitride. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Castineira JLP, Alves JL, Leite JR, Scolfaro LMR, Enderlein R. Nitrogen antisite defect in zincblende-type boron nitride. Resumos. 1996 ;[citado 2026 mar. 14 ] -
Vancouver
Castineira JLP, Alves JL, Leite JR, Scolfaro LMR, Enderlein R. Nitrogen antisite defect in zincblende-type boron nitride. Resumos. 1996 ;[citado 2026 mar. 14 ] - Efeito de carga imagem em Poços Quânticos Si/SrTi/O IND. 3 e Si/Hf'O IND. 2'
- Rigorous hole band structure calculations of p-type 'delta'-doping superlattices in silicon
- First principles materials study for spintronics: MnAs and MnN
- Ab initio studies of indium separated phases in AlGaInN quaternary alloys
- Electronic properties of 'SI' 'DELTA'-doped 'GA''AS' quantum wells
- Hole band structure calculations of 'ANTIND.p'-type 'delta'-doping quantum wells and superlattices in silicon
- Minibands of p-type 'delta'-doping superlattices in GaAs
- Plateau behavior and metal-insulator transition in 'DELTA'-doping superlattices for transport along the growth direction
- Density Functional theory for Holes in Semiconductors
- p-type 'delta'-doping quantum wells and superlattices in Si: self-consistent hole potentials and band structures
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