Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps (1995)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIAO GOMES DOS - EP ; HASENACK, CLAUS MARTIN - EP
- School: EP
- Subject: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Place of publication: Pennington
- Date published: 1995
- Source:
- Título do periódico: Journal of the Electrochemical Society
- Volume/Número/Paginação/Ano: v.142, n.3 , p.902-7, mar. 1995
-
ABNT
SANTOS FILHO, Sebastião Gomes dos; HASENACK, Claus Martin; SALAY, L C; MARTINS, P. Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society, Pennington, v. 142, n. 3 , p. 902-7, 1995. -
APA
Santos Filho, S. G. dos, Hasenack, C. M., Salay, L. C., & Martins, P. (1995). Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society, 142( 3 ), 902-7. -
NLM
Santos Filho SG dos, Hasenack CM, Salay LC, Martins P. Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society. 1995 ;142( 3 ): 902-7. -
Vancouver
Santos Filho SG dos, Hasenack CM, Salay LC, Martins P. Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society. 1995 ;142( 3 ): 902-7. - Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom)
- Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon
- Cleaning of silicon wafers with hot isopropyl, alcohol, and destilled water as final steps
- Effect of the temperature cooling rate on the 'SI' / 'SI''O IND.2' interface roughness after rapid thermal oxidation
- Processo de limpeza para laminas de silicio
- Construcao e caracterizacao inicial de um medidor de rugosidade quimica de superficies de silicio empregando espalhamento espectral de luz
- Estudo da quantificação da rugosidade da interface Si-SiO2. (em CD-Rom)
- Obtencao de camadas ultrafinas de oxido de silicio por oxidacao termica rapida
- Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings
- Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching
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