A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps (1995)
- Authors:
- USP affiliated authors: SANTOS FILHO, SEBASTIÃO GOMES DOS - EP ; HASENACK, CLAUS MARTIN - EP
- School: EP
- DOI: 10.1149/1.2048555
- Subject: CIRCUITOS INTEGRADOS
- Language: Inglês
- Imprenta:
- Place of publication: Pennington
- Date published: 1995
- Source:
- Título do periódico: Journal of the Electrochemical Society
- Volume/Número/Paginação/Ano: v.142, n.3 , p.902-7, mar. 1995
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
SANTOS FILHO, Sebastião Gomes dos et al. A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society, v. 142, n. 3 , p. 902-7, 1995Tradução . . Acesso em: 29 jun. 2022. -
APA
Santos Filho, S. G. dos, Hasenack, C. M., Salay, L. C., & Mertens, P. W. (1995). A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society, 142( 3 ), 902-7. doi:10.1149/1.2048555 -
NLM
Santos Filho SG dos, Hasenack CM, Salay LC, Mertens PW. A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society. 1995 ;142( 3 ): 902-7.[citado 2022 jun. 29 ] -
Vancouver
Santos Filho SG dos, Hasenack CM, Salay LC, Mertens PW. A Less critical cleaning procedure for silicon wafers using diluted hf dip and boiling in isopropil alcohol as final steps. Journal of the Electrochemical Society. 1995 ;142( 3 ): 902-7.[citado 2022 jun. 29 ] - Achievement of high quality thin gates oxides grown by rapid thermal oxidation of silicon
- Mechanisms of metal and sulfur contamination on silicon wafer surfaces during HF-last cleanings. (em CD-Rom)
- Silicon surface roughening induced by c 'BR''F IND.3' plasma during the reactive ion etching
- Deposition and renoval of surface contaminants from silicon wafers by means of a diluted hp dip followed or not by a isopropyl alcohol boil
- Plating mechanisms of cooper onto silicon surfaces diluted hydrofluoric solutions
- Rapid thermal oxidation of silicon with different thermal annealing cycles in nitrogen: influence on surface microroughness and electrical characteristics
- Influence of different rapid thermal oxidation recipes on the rms roughness of the 'SI'-'SI''O IND.2' interface
- Obtencao de camadas ultrafinas de oxido de silicio por oxidacao termica rapida
- Electroless mechanism of 'CU' plating onto 'SI' during hf-last cleanings
- Estudo da quantificação da rugosidade da interface Si-SiO2. (em CD-Rom)
Informações sobre o DOI: 10.1149/1.2048555 (Fonte: oaDOI API)
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