Laser-induced absorption decay for detecting carrier lifetime in c-'SI' and porous 'SI' (1992)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Programa e Resumos
- Conference titles: Simposio Estadual de Lasers e Aplicacoes
-
ABNT
GRIVICKAS, V et al. Laser-induced absorption decay for detecting carrier lifetime in c-'SI' and porous 'SI'. 1992, Anais.. São Paulo: Ipen, 1992. . Acesso em: 19 set. 2024. -
APA
Grivickas, V., Linnros, J., Basmaji, P., & Misoguti, L. (1992). Laser-induced absorption decay for detecting carrier lifetime in c-'SI' and porous 'SI'. In Programa e Resumos. São Paulo: Ipen. -
NLM
Grivickas V, Linnros J, Basmaji P, Misoguti L. Laser-induced absorption decay for detecting carrier lifetime in c-'SI' and porous 'SI'. Programa e Resumos. 1992 ;[citado 2024 set. 19 ] -
Vancouver
Grivickas V, Linnros J, Basmaji P, Misoguti L. Laser-induced absorption decay for detecting carrier lifetime in c-'SI' and porous 'SI'. Programa e Resumos. 1992 ;[citado 2024 set. 19 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
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