Epitaxial growth of gan on si-terminated sic (100): a total energy study (1995)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Português
- Imprenta:
- Publisher: Sociedade Brasileira de Fisica
- Publisher place: São Paulo
- Date published: 1995
- Source:
- Título do periódico: Resumos
- Conference titles: Encontro Nacional de Fisica da Materia Condensada
-
ABNT
TELES, L. K. et al. Epitaxial growth of gan on si-terminated sic (100): a total energy study. 1995, Anais.. São Paulo: Sociedade Brasileira de Fisica, 1995. . Acesso em: 19 set. 2024. -
APA
Teles, L. K., Scolfaro, L. M. R., Enderlein, R., Leite, J. R., Josiek, A., & Schikora, D. (1995). Epitaxial growth of gan on si-terminated sic (100): a total energy study. In Resumos. São Paulo: Sociedade Brasileira de Fisica. -
NLM
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D. Epitaxial growth of gan on si-terminated sic (100): a total energy study. Resumos. 1995 ;[citado 2024 set. 19 ] -
Vancouver
Teles LK, Scolfaro LMR, Enderlein R, Leite JR, Josiek A, Schikora D. Epitaxial growth of gan on si-terminated sic (100): a total energy study. Resumos. 1995 ;[citado 2024 set. 19 ] - Estrutura eletronica de pocos quanticos 'AL IND.X' 'GA IND.1-X''AS' / 'GA''AS' delta-dopados ('GAMA'-'SI') sob efeito de campos magneticos
- Electronic structure of n-type 'DELTA'-doping multiple layers and superlattices in silicon
- Band structure of holes in p-'DELTA'-doping superlattices
- Energy levels due to n-type'GAMA'-doping in silicon
- Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'
- Structural properties of cubic gan epitaxial layers grown on 'BETA-SIC'
- Exchange-correlation effects on a multicomponent isotropic hole gas in semiconductors
- Parameters of the Kane model from effective masses: ambiguities and instabilities
- Electronic properties of nitride-alloys through first principles calculations
- Influence of composition fluctuations and strain on gap bowing in 'In IND.X''Ga IND.1-X'N
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