Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS' (1996)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; SCOLFARO, LUISA MARIA RIBEIRO - IF
- Unidade: IF
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Conference titles: International Conference on Low Dimensional Structures and Devices
-
ABNT
ENDERLEIN, R et al. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. 1996, Anais.. Cingapura: Elsevier, 1996. . Acesso em: 20 jan. 2026. -
APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., Leite, J. R., & Dias, I. E. L. (1996). Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. In Materials Science and Engineering B 35. Cingapura: Elsevier. -
NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR, Dias IEL. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. Materials Science and Engineering B 35. 1996 ;[citado 2026 jan. 20 ] -
Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR, Dias IEL. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. Materials Science and Engineering B 35. 1996 ;[citado 2026 jan. 20 ] - Impurity levels of substitutional chalcogens-doped ge
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