Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS' (1992)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Assunto: MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Bulletin of the American Physical Society
- Volume/Número/Paginação/Ano: v.37, n.1 , p.358, mar. 1992
- Conference titles: March Meeting
-
ABNT
SCHRAPPE, B J e NOTARI, A C e BASMAJI, Pierre. Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Bulletin of the American Physical Society. New York: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 19 set. 2024. , 1992 -
APA
Schrappe, B. J., Notari, A. C., & Basmaji, P. (1992). Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Bulletin of the American Physical Society. New York: Instituto de Física de São Carlos, Universidade de São Paulo. -
NLM
Schrappe BJ, Notari AC, Basmaji P. Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Bulletin of the American Physical Society. 1992 ;37( 1 ): 358.[citado 2024 set. 19 ] -
Vancouver
Schrappe BJ, Notari AC, Basmaji P. Capacitance measurement of resonant dx centers in heavily 'SE'-doped 'AL IND.X''GA IND.1-X''AS'. Bulletin of the American Physical Society. 1992 ;37( 1 ): 358.[citado 2024 set. 19 ] - Raman scattering of the optical '('GA''AS') IND. n'/ '('AL''AS') IND. n' superlattices grown on (311)A and (311)B surface
- Spectroscopy of optical phonons in InAs/GaAs self-assembled quantum dots
- Propriedades óticas, estruturais e elétricas de camadas múltiplas de pontos quânticos naturais de InAs crescidos sobre substrato de GaAs
- Kinetic limit of segregation during the molecular beam epitaxy of GaAs/AlAs heterostructures
- Raman study of interface arrangement in 'GA''AS' / 'AL''AS' superlattices grown in different crystal directions
- Propriedades opticas e eletricas de silicio poroso
- Optical and structural properties of low temperature 'GA''AS' layers grown by molecular beam epitaxy
- Propriedades opticas de filmes 'GA''AS' crescidos a baixa temperatura por mbe
- Transition of aharonov-bohm oscillations from hc / e to hc/2e periodicity induced by magnetic field in the array of rings with small diameter
- Nano-scale wires of 'GA''AS ON POROUS 'si' grown by molecular beam epitaxy
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