Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon (1985)
- Authors:
- USP affiliated authors: LEITE, JOSE ROBERTO - IF ; GOMES, VIVILI MARIA SILVA - IF
- Unidade: IF
- Assunto: MICROSCOPIA
- Language: Português
- Source:
- Título: Solid State Communications
- Volume/Número/Paginação/Ano: v.55, p.333-7, 1985
-
ABNT
ALVES, J L A et al. Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon. Solid State Communications, v. 55, p. 333-7, 1985Tradução . . Acesso em: 06 out. 2024. -
APA
Alves, J. L. A., Leite, J. R., Gomes, V. M. S., & Assali, L. V. C. (1985). Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon. Solid State Communications, 55, 333-7. -
NLM
Alves JLA, Leite JR, Gomes VMS, Assali LVC. Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon. Solid State Communications. 1985 ;55 333-7.[citado 2024 out. 06 ] -
Vancouver
Alves JLA, Leite JR, Gomes VMS, Assali LVC. Microscopic models of 'HG POT.+', 'AU POT.0' and 'PT POT.-' Isoelectronic interstitial impurities in silicon. Solid State Communications. 1985 ;55 333-7.[citado 2024 out. 06 ] - Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Theoretical investigation of deep level complexes related to carbon and oxygen impurities in silicon
- Eletronic structure of chalcogen impurities in germanium
- Exchange correlation effects on the quantum states of carriers in quantum wells in gaas-algaas heterostructures under in-plane magnetic fields
- Estrutura eletronica de impurezas em germanio
- Self-consistent calculations of the two-dimensional electron density in modulation-doped superlattices
- Electronic structure of oxygen-related complex defects in silicon
- Efeito de campos magneticos paralelos a pocos quanticos sobre as bandas de valencia e conducao em hetero-estruturas de 'GA''AS'-'AL''GA''AS'
- Calculos autoconsistentes da densidade bidimensional de eletrons em super-redes com dopagem
- Estrutura eletronica de impurezas em germanio
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