ReP USP - Resultado da busca

Trabalho de evento
An improved current model in saturation for trapezoidal finfets (2008)
Martins, Gustavo; Giacomini, Renato Camargo; Martino, João Antonio (orient.)
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARTINS, Gustavo e GIACOMINI, Renato Camargo. An improved current model in saturation for trapezoidal finfets. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 15 nov. 2025.
APA
Martins, G., & Giacomini, R. C. (2008). An improved current model in saturation for trapezoidal finfets. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 15 ]
Vancouver
Martins G, Giacomini RC. An improved current model in saturation for trapezoidal finfets. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 15 ]
Trabalho de evento
Carriers mobility extraction methods for triple-gate FinFET (2008)
Santos, Carolina Davanzzo Gomes dos; Martino, João Antonio (orient.)
Fonte: SBMICRO 2008: Anais. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Carolina Davanzzo Gomes dos. Carriers mobility extraction methods for triple-gate FinFET. 2008, Anais.. Pennington: The Electrochemical Society, 2008. . Acesso em: 15 nov. 2025.
APA
Santos, C. D. G. dos. (2008). Carriers mobility extraction methods for triple-gate FinFET. In SBMICRO 2008: Anais. Pennington: The Electrochemical Society.
NLM
Santos CDG dos. Carriers mobility extraction methods for triple-gate FinFET. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 15 ]
Vancouver
Santos CDG dos. Carriers mobility extraction methods for triple-gate FinFET. SBMICRO 2008: Anais. 2008 ;[citado 2025 nov. 15 ]
Trabalho de evento
Sidewall angle influence on the finFET analog parameters (2007)
Giacomini, Renato Camargo; Martino, João Antonio ; Pavanello, Marcelo Antonio
Fonte: SBMicro 2007. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio e PAVANELLO, Marcelo Antonio. Sidewall angle influence on the finFET analog parameters. 2007, Anais.. Pennington: The Electrochemical Society, 2007. . Acesso em: 15 nov. 2025.
APA
Giacomini, R. C., Martino, J. A., & Pavanello, M. A. (2007). Sidewall angle influence on the finFET analog parameters. In SBMicro 2007. Pennington: The Electrochemical Society.
NLM
Giacomini RC, Martino JA, Pavanello MA. Sidewall angle influence on the finFET analog parameters. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Vancouver
Giacomini RC, Martino JA, Pavanello MA. Sidewall angle influence on the finFET analog parameters. SBMicro 2007. 2007 ;[citado 2025 nov. 15 ]
Trabalho de evento
Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs (2005)
Bellodi, Marcello; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.
APA
Bellodi, M., & Martino, J. A. (2005). Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Bellodi M, Martino JA. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Vancouver
Bellodi M, Martino JA. Temperature influences on the drain leakage current behavior in graded-channel SOI nMOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Trabalho de evento
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET (2005)
Paiola, A.G.; Nicolett, Aparecido Sirley; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAIOLA, A.G. e NICOLETT, Aparecido Sirley e MARTINO, João Antonio. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.
APA
Paiola, A. G., Nicolett, A. S., & Martino, J. A. (2005). Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Paiola AG, Nicolett AS, Martino JA. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Vancouver
Paiola AG, Nicolett AS, Martino JA. Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Trabalho de evento
A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region (2005)
Almeida, Galba Falce de; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ALMEIDA, Galba Falce de e MARTINO, João Antonio. A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.
APA
Almeida, G. F. de, & Martino, J. A. (2005). A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Almeida GF de, Martino JA. A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Vancouver
Almeida GF de, Martino JA. A study of total series resistance and effective channel length comparing SOI nMOSFET and GC SOI nMOSFET in saturation region. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Trabalho de evento
A simple method to model nonrectangular-gate layout in SOI MOSFETs (2005)
Giacomini, Renato Camargo; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2005. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIACOMINI, Renato Camargo e MARTINO, João Antonio. A simple method to model nonrectangular-gate layout in SOI MOSFETs. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 15 nov. 2025.
APA
Giacomini, R. C., & Martino, J. A. (2005). A simple method to model nonrectangular-gate layout in SOI MOSFETs. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.
NLM
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Vancouver
Giacomini RC, Martino JA. A simple method to model nonrectangular-gate layout in SOI MOSFETs. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 15 ]
Parte de monografia/livro
A simple analytical model of graded-channel SOI nMOSFET transconductance (2002)
Gimenez, Salvador Pinillos ; Pavanello, Marcelo Antonio ; Martino, João Antonio
Fonte: Microelectronics Technology and Devices SBMICRO 2002. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
GIMENEZ, Salvador Pinillos e PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. A simple analytical model of graded-channel SOI nMOSFET transconductance. Microelectronics Technology and Devices SBMICRO 2002. Tradução . Pennington: The Electrochemical Society, 2002. . . Acesso em: 15 nov. 2025.
APA
Gimenez, S. P., Pavanello, M. A., & Martino, J. A. (2002). A simple analytical model of graded-channel SOI nMOSFET transconductance. In Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society.
NLM
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 15 ]
Vancouver
Gimenez SP, Pavanello MA, Martino JA. A simple analytical model of graded-channel SOI nMOSFET transconductance. In: Microelectronics Technology and Devices SBMICRO 2002. Pennington: The Electrochemical Society; 2002. [citado 2025 nov. 15 ]

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