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Artigo de periodico
Fluorescent Cdots(N)-Silica composites: direct synthesis and application as electrochemical sensor of fenitrothion pesticide (2021)
Cesana, Rafael; Ferreira, João H. A; Gonçalves, Josué Martins ; Gomes, Delmarcio; Nakamura, Marcelo ; Peres, Renato M; Toma, Henrique Eisi ; Canevari, Thiago C
Source: Materials Science and Engineering B. Unidade: IQ
Subjects: PESTICIDAS, NANOCOMPOSITOS, SENSORES QUÍMICOS, NANOTECNOLOGIA, CARBONO
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ABNT
CESANA, Rafael et al. Fluorescent Cdots(N)-Silica composites: direct synthesis and application as electrochemical sensor of fenitrothion pesticide. Materials Science and Engineering B, v. 267, p. 1-9 art. 115084, 2021Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2021.115084. Acesso em: 16 nov. 2025.
APA
Cesana, R., Ferreira, J. H. A., Gonçalves, J. M., Gomes, D., Nakamura, M., Peres, R. M., et al. (2021). Fluorescent Cdots(N)-Silica composites: direct synthesis and application as electrochemical sensor of fenitrothion pesticide. Materials Science and Engineering B, 267, 1-9 art. 115084. doi:10.1016/j.mseb.2021.115084
NLM
Cesana R, Ferreira JHA, Gonçalves JM, Gomes D, Nakamura M, Peres RM, Toma HE, Canevari TC. Fluorescent Cdots(N)-Silica composites: direct synthesis and application as electrochemical sensor of fenitrothion pesticide [Internet]. Materials Science and Engineering B. 2021 ; 267 1-9 art. 115084.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2021.115084
Vancouver
Cesana R, Ferreira JHA, Gonçalves JM, Gomes D, Nakamura M, Peres RM, Toma HE, Canevari TC. Fluorescent Cdots(N)-Silica composites: direct synthesis and application as electrochemical sensor of fenitrothion pesticide [Internet]. Materials Science and Engineering B. 2021 ; 267 1-9 art. 115084.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2021.115084
Artigo de periodico
Photoluminescent polymer electrolyte based on agar and containing europium picrate for electrochemical devices (2012)
Lima, E.; Raphael, Ellen; Sentanin, F.; Rodrigues, L. C.; Ferreira, R. A. S.; Carlos, L. D.; Silva, M. M.; Pawlicka, Agnieszka
Source: Materials Science and Engineering B. Unidade: IQSC
Assunto: POLÍMEROS (MATERIAIS)
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LIMA, E. et al. Photoluminescent polymer electrolyte based on agar and containing europium picrate for electrochemical devices. Materials Science and Engineering B, v. 177 n. 6, p. 488-493, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2012.02.004. Acesso em: 16 nov. 2025.
APA
Lima, E., Raphael, E., Sentanin, F., Rodrigues, L. C., Ferreira, R. A. S., Carlos, L. D., et al. (2012). Photoluminescent polymer electrolyte based on agar and containing europium picrate for electrochemical devices. Materials Science and Engineering B, 177 n. 6, 488-493. doi:10.1016/j.mseb.2012.02.004
NLM
Lima E, Raphael E, Sentanin F, Rodrigues LC, Ferreira RAS, Carlos LD, Silva MM, Pawlicka A. Photoluminescent polymer electrolyte based on agar and containing europium picrate for electrochemical devices [Internet]. Materials Science and Engineering B. 2012 ; 177 n. 6 488-493.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2012.02.004
Vancouver
Lima E, Raphael E, Sentanin F, Rodrigues LC, Ferreira RAS, Carlos LD, Silva MM, Pawlicka A. Photoluminescent polymer electrolyte based on agar and containing europium picrate for electrochemical devices [Internet]. Materials Science and Engineering B. 2012 ; 177 n. 6 488-493.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2012.02.004
Artigo de periodico
Spin-polarized transport in II-VI diluted magnetic semiconductors superlattices (2012)
Gomes, J. L.; Rodrigues, S. C. P.; Sipahi, Guilherme Matos ; Scolfaro, L.; Silva Junior, E. F.
Source: Materials Science and Engineering B. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN, FOTOLUMINESCÊNCIA
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ABNT
GOMES, J. L. et al. Spin-polarized transport in II-VI diluted magnetic semiconductors superlattices. Materials Science and Engineering B, v. 177, n. 12, p. 962-966, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2012.04.017. Acesso em: 16 nov. 2025.
APA
Gomes, J. L., Rodrigues, S. C. P., Sipahi, G. M., Scolfaro, L., & Silva Junior, E. F. (2012). Spin-polarized transport in II-VI diluted magnetic semiconductors superlattices. Materials Science and Engineering B, 177( 12), 962-966. doi:10.1016/j.mseb.2012.04.017
NLM
Gomes JL, Rodrigues SCP, Sipahi GM, Scolfaro L, Silva Junior EF. Spin-polarized transport in II-VI diluted magnetic semiconductors superlattices [Internet]. Materials Science and Engineering B. 2012 ; 177( 12): 962-966.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2012.04.017
Vancouver
Gomes JL, Rodrigues SCP, Sipahi GM, Scolfaro L, Silva Junior EF. Spin-polarized transport in II-VI diluted magnetic semiconductors superlattices [Internet]. Materials Science and Engineering B. 2012 ; 177( 12): 962-966.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2012.04.017
Artigo de periodico
Refining of metallurgical silicon by directional solidification (2011)
Martorano, Marcelo de Aquino ; Ferreira, João Batista; Oliveira, T. S; Tsubaki, Tomoe Oide
Source: Materials Science and Engineering B. Unidade: EP
Subjects: SILÍCIO, SOLIDIFICAÇÃO, REFINO
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ABNT
MARTORANO, Marcelo de Aquino et al. Refining of metallurgical silicon by directional solidification. Materials Science and Engineering B, v. 176 n.3, p. 217-226, 2011Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2010.11.010. Acesso em: 16 nov. 2025.
APA
Martorano, M. de A., Ferreira, J. B., Oliveira, T. S., & Tsubaki, T. O. (2011). Refining of metallurgical silicon by directional solidification. Materials Science and Engineering B, 176 n.3, 217-226. doi:10.1016/j.mseb.2010.11.010
NLM
Martorano M de A, Ferreira JB, Oliveira TS, Tsubaki TO. Refining of metallurgical silicon by directional solidification [Internet]. Materials Science and Engineering B. 2011 ; 176 n.3 217-226.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2010.11.010
Vancouver
Martorano M de A, Ferreira JB, Oliveira TS, Tsubaki TO. Refining of metallurgical silicon by directional solidification [Internet]. Materials Science and Engineering B. 2011 ; 176 n.3 217-226.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2010.11.010
Artigo de periodico
Photogenerated carrier profile determination in polymeric light-emitting diodes by steady-state and transient photocurrent measurements (2006)
Santos, L. F.; Bianchi, R. F.; Faria, Roberto Mendonça ; Mergulhão, S.; Faria, Roberto Mendonça
Source: Materials Science and Engineering B. Unidade: IFSC
Subjects: POLÍMEROS (MATERIAIS), FOTOCONDUTIVIDADE, ESPECTROS
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ABNT
SANTOS, L. F. et al. Photogenerated carrier profile determination in polymeric light-emitting diodes by steady-state and transient photocurrent measurements. Materials Science and Engineering B, v. No 2006, n. 2, p. 103-107, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2006.08.043. Acesso em: 16 nov. 2025.
APA
Santos, L. F., Bianchi, R. F., Faria, R. M., Mergulhão, S., & Faria, R. M. (2006). Photogenerated carrier profile determination in polymeric light-emitting diodes by steady-state and transient photocurrent measurements. Materials Science and Engineering B, No 2006( 2), 103-107. doi:10.1016/j.mseb.2006.08.043
NLM
Santos LF, Bianchi RF, Faria RM, Mergulhão S, Faria RM. Photogenerated carrier profile determination in polymeric light-emitting diodes by steady-state and transient photocurrent measurements [Internet]. Materials Science and Engineering B. 2006 ; No 2006( 2): 103-107.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2006.08.043
Vancouver
Santos LF, Bianchi RF, Faria RM, Mergulhão S, Faria RM. Photogenerated carrier profile determination in polymeric light-emitting diodes by steady-state and transient photocurrent measurements [Internet]. Materials Science and Engineering B. 2006 ; No 2006( 2): 103-107.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2006.08.043
Artigo de periodico
Structural analysis of silicon oxynitride films deposited by PECVD (2004)
Criado, Denise ; Alayo Chávez, Marco Isaías ; Pereyra, Inés ; Fantini, Márcia Carvalho de Abreu
Source: Materials Science and Engineering B. Unidades: IF, EP
Subjects: MATERIAIS, MATÉRIA CONDENSADA, FILMES FINOS, FÍSICA DE PLASMAS
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ABNT
CRIADO, Denise et al. Structural analysis of silicon oxynitride films deposited by PECVD. Materials Science and Engineering B, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2004.05.017. Acesso em: 16 nov. 2025.
APA
Criado, D., Alayo Chávez, M. I., Pereyra, I., & Fantini, M. C. de A. (2004). Structural analysis of silicon oxynitride films deposited by PECVD. Materials Science and Engineering B. doi:10.1016/j.mseb.2004.05.017
NLM
Criado D, Alayo Chávez MI, Pereyra I, Fantini MC de A. Structural analysis of silicon oxynitride films deposited by PECVD [Internet]. Materials Science and Engineering B. 2004 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.017
Vancouver
Criado D, Alayo Chávez MI, Pereyra I, Fantini MC de A. Structural analysis of silicon oxynitride films deposited by PECVD [Internet]. Materials Science and Engineering B. 2004 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.017
Artigo de periodico
Transport via excitonic complexes in resonant tunneling structures (2004)
Vercik, Andrés; Gobato, Y. G.; Brasil, M. J. S. P.
Source: Materials Science and Engineering B. Unidade: FZEA
Subjects: ÓPTICA, ESTRUTURA DOS MATERIAIS, SEMICONDUTORES, DIODOS
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ABNT
VERCIK, Andrés e GOBATO, Y. G. e BRASIL, M. J. S. P. Transport via excitonic complexes in resonant tunneling structures. Materials Science and Engineering B, v. 112, n. 2-3, p. 128-130, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2004.05.018. Acesso em: 16 nov. 2025.
APA
Vercik, A., Gobato, Y. G., & Brasil, M. J. S. P. (2004). Transport via excitonic complexes in resonant tunneling structures. Materials Science and Engineering B, 112( 2-3), 128-130. doi:10.1016/j.mseb.2004.05.018
NLM
Vercik A, Gobato YG, Brasil MJSP. Transport via excitonic complexes in resonant tunneling structures [Internet]. Materials Science and Engineering B. 2004 ; 112( 2-3): 128-130.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.018
Vancouver
Vercik A, Gobato YG, Brasil MJSP. Transport via excitonic complexes in resonant tunneling structures [Internet]. Materials Science and Engineering B. 2004 ; 112( 2-3): 128-130.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.018
Artigo de periodico
Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films (2004)
Pereyra, Inés ; Fantini, Márcia Carvalho de Abreu ; Alayo Chávez, Marco Isaías ; Oliveira, R A R; Ribeiro, M; Scopel, Wanderla Luis
Source: Materials Science and Engineering B. Unidades: IF, EP
Subjects: MATERIAIS, MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA
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ABNT
PEREYRA, Inés et al. Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films. Materials Science and Engineering B, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2004.05.015. Acesso em: 16 nov. 2025.
APA
Pereyra, I., Fantini, M. C. de A., Alayo Chávez, M. I., Oliveira, R. A. R., Ribeiro, M., & Scopel, W. L. (2004). Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films. Materials Science and Engineering B. doi:10.1016/j.mseb.2004.05.015
NLM
Pereyra I, Fantini MC de A, Alayo Chávez MI, Oliveira RAR, Ribeiro M, Scopel WL. Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films [Internet]. Materials Science and Engineering B. 2004 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.015
Vancouver
Pereyra I, Fantini MC de A, Alayo Chávez MI, Oliveira RAR, Ribeiro M, Scopel WL. Evidence of clusters size-dependent photoluminescence on silicon-rich silicon oxynitride films [Internet]. Materials Science and Engineering B. 2004 ;[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.015
Artigo de periodico
Photocurrent and photoluminescence studies of resonant tunneling diodes (2004)
Santos, L. F.; Vercik, Andrés; Camps, I.; Gobato, Y. G.
Source: Materials Science and Engineering B. Unidade: FZEA
Subjects: ÓPTICA, ESTRUTURA DOS MATERIAIS, SEMICONDUTORES, DIODOS
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ABNT
SANTOS, L. F. et al. Photocurrent and photoluminescence studies of resonant tunneling diodes. Materials Science and Engineering B, v. 112, n. 2-3, p. 131-133, 2004Tradução . . Disponível em: https://doi.org/10.1016/j.mseb.2004.05.019. Acesso em: 16 nov. 2025.
APA
Santos, L. F., Vercik, A., Camps, I., & Gobato, Y. G. (2004). Photocurrent and photoluminescence studies of resonant tunneling diodes. Materials Science and Engineering B, 112( 2-3), 131-133. doi:10.1016/j.mseb.2004.05.019
NLM
Santos LF, Vercik A, Camps I, Gobato YG. Photocurrent and photoluminescence studies of resonant tunneling diodes [Internet]. Materials Science and Engineering B. 2004 ; 112( 2-3): 131-133.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.019
Vancouver
Santos LF, Vercik A, Camps I, Gobato YG. Photocurrent and photoluminescence studies of resonant tunneling diodes [Internet]. Materials Science and Engineering B. 2004 ; 112( 2-3): 131-133.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/j.mseb.2004.05.019
Artigo de periodico
'beta'-Ba'B IND.2''O IND.4' nanometric powder obtained from the ternary BaO-'B IND.2'O IND.3'-Ti'O IND.2' system using the polymeric precursor method (2004)
Maia, Lauro J. Q.; Bernardi, Maria Inês Basso; Zanatta, Antonio Ricardo ; Hernandes, Antônio Carlos ; Mastelaro, Valmor Roberto
Source: Materials Science and Engineering B. Unidade: IFSC
Subjects: FILMES FINOS, CRISTALIZAÇÃO, CRESCIMENTO DE CRISTAIS
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ABNT
MAIA, Lauro J. Q. et al. 'beta'-Ba'B IND.2''O IND.4' nanometric powder obtained from the ternary BaO-'B IND.2'O IND.3'-Ti'O IND.2' system using the polymeric precursor method. Materials Science and Engineering B, v. 107, n. 1, p. 33-38, 2004Tradução . . Acesso em: 16 nov. 2025.
APA
Maia, L. J. Q., Bernardi, M. I. B., Zanatta, A. R., Hernandes, A. C., & Mastelaro, V. R. (2004). 'beta'-Ba'B IND.2''O IND.4' nanometric powder obtained from the ternary BaO-'B IND.2'O IND.3'-Ti'O IND.2' system using the polymeric precursor method. Materials Science and Engineering B, 107( 1), 33-38.
NLM
Maia LJQ, Bernardi MIB, Zanatta AR, Hernandes AC, Mastelaro VR. 'beta'-Ba'B IND.2''O IND.4' nanometric powder obtained from the ternary BaO-'B IND.2'O IND.3'-Ti'O IND.2' system using the polymeric precursor method. Materials Science and Engineering B. 2004 ; 107( 1): 33-38.[citado 2025 nov. 16 ]
Vancouver
Maia LJQ, Bernardi MIB, Zanatta AR, Hernandes AC, Mastelaro VR. 'beta'-Ba'B IND.2''O IND.4' nanometric powder obtained from the ternary BaO-'B IND.2'O IND.3'-Ti'O IND.2' system using the polymeric precursor method. Materials Science and Engineering B. 2004 ; 107( 1): 33-38.[citado 2025 nov. 16 ]
Artigo de periodico
Planar force-constant method for lattice dynamics of cubic InN (2002)
Alves, H W Leite; Alves, J L A; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Materials Science and Engineering B. Unidade: IF
Subjects: SEMICONDUTIVIDADE, ESPECTROSCOPIA RAMAN
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ABNT
ALVES, H W Leite et al. Planar force-constant method for lattice dynamics of cubic InN. Materials Science and Engineering B, v. 93, n. 1-3, p. 90-93, 2002Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(02)00036-3. Acesso em: 16 nov. 2025.
APA
Alves, H. W. L., Alves, J. L. A., Scolfaro, L. M. R., & Leite, J. R. (2002). Planar force-constant method for lattice dynamics of cubic InN. Materials Science and Engineering B, 93( 1-3), 90-93. doi:10.1016/s0921-5107(02)00036-3
NLM
Alves HWL, Alves JLA, Scolfaro LMR, Leite JR. Planar force-constant method for lattice dynamics of cubic InN [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): 90-93.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(02)00036-3
Vancouver
Alves HWL, Alves JLA, Scolfaro LMR, Leite JR. Planar force-constant method for lattice dynamics of cubic InN [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): 90-93.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(02)00036-3
Artigo de periodico
Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys (2002)
Paiva, R de; Alves, J L A; Nogueira, R A; Oliveira, C de; Alves, H W L; Scolfaro, Luisa Maria Ribeiro; Leite, J. R.
Source: Materials Science and Engineering B. Unidade: IF
Assunto: ESTRUTURA ELETRÔNICA
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ABNT
PAIVA, R de et al. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys. Materials Science and Engineering B, v. 93, n. 1-3, p. p 2-5, 2002Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908. Acesso em: 16 nov. 2025.
APA
Paiva, R. de, Alves, J. L. A., Nogueira, R. A., Oliveira, C. de, Alves, H. W. L., Scolfaro, L. M. R., & Leite, J. R. (2002). Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys. Materials Science and Engineering B, 93( 1-3), p 2-5. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908
NLM
Paiva R de, Alves JLA, Nogueira RA, Oliveira C de, Alves HWL, Scolfaro LMR, Leite JR. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): p 2-5.[citado 2025 nov. 16 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908
Vancouver
Paiva R de, Alves JLA, Nogueira RA, Oliveira C de, Alves HWL, Scolfaro LMR, Leite JR. Theoretical study of the 'Al IND.X' 'Ga IND.1-X'N alloys [Internet]. Materials Science and Engineering B. 2002 ; 93( 1-3): p 2-5.[citado 2025 nov. 16 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5589&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0e0a80acf3a4a011f94b8bacbc1c1908
Artigo de periodico
Lattice dynamics of boron nitride (1999)
Alves, H. W. L.; Alves, J. L. A.; Castineira, J. L. P.; Leite, J. R.
Source: Materials Science and Engineering B. Unidade: IF
Assunto: ENGENHARIA AUTOMOBILÍSTICA
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ABNT
ALVES, H. W. L. et al. Lattice dynamics of boron nitride. Materials Science and Engineering B, v. 59, n. 1-3, p. 264-267, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(98)00327-4. Acesso em: 16 nov. 2025.
APA
Alves, H. W. L., Alves, J. L. A., Castineira, J. L. P., & Leite, J. R. (1999). Lattice dynamics of boron nitride. Materials Science and Engineering B, 59( 1-3), 264-267. doi:10.1016/s0921-5107(98)00327-4
NLM
Alves HWL, Alves JLA, Castineira JLP, Leite JR. Lattice dynamics of boron nitride [Internet]. Materials Science and Engineering B. 1999 ; 59( 1-3): 264-267.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(98)00327-4
Vancouver
Alves HWL, Alves JLA, Castineira JLP, Leite JR. Lattice dynamics of boron nitride [Internet]. Materials Science and Engineering B. 1999 ; 59( 1-3): 264-267.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(98)00327-4
Artigo de periodico
Density and ultrasonic velocities in fast ionic conducting borate glasses (1999)
Souto, Sérgio Paulo Amaral; Massot, M.; Balkanski, M.; Royer, D.
Source: Materials Science and Engineering B. Unidade: FZEA
Subjects: MEDICINA FÍSICA, SEMICONDUTORES
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ABNT
SOUTO, Sérgio Paulo Amaral et al. Density and ultrasonic velocities in fast ionic conducting borate glasses. Materials Science and Engineering B, v. 64, p. 33-38, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(99)00150-6. Acesso em: 16 nov. 2025.
APA
Souto, S. P. A., Massot, M., Balkanski, M., & Royer, D. (1999). Density and ultrasonic velocities in fast ionic conducting borate glasses. Materials Science and Engineering B, 64, 33-38. doi:10.1016/s0921-5107(99)00150-6
NLM
Souto SPA, Massot M, Balkanski M, Royer D. Density and ultrasonic velocities in fast ionic conducting borate glasses [Internet]. Materials Science and Engineering B. 1999 ; 64 33-38.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(99)00150-6
Vancouver
Souto SPA, Massot M, Balkanski M, Royer D. Density and ultrasonic velocities in fast ionic conducting borate glasses [Internet]. Materials Science and Engineering B. 1999 ; 64 33-38.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(99)00150-6
Artigo de periodico
Theoretical LEED parameters for the zinc-blende GaN (110) surface (1999)
Alves, H. W. L.; Alves, J. L. A.; Silva, Juarez Lopes Ferreira da ; Leite, J. R.; Nogueira, R. A.
Source: Materials Science and Engineering B. Unidade: IF
Assunto: ENGENHARIA AUTOMOBILÍSTICA
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ABNT
ALVES, H. W. L. et al. Theoretical LEED parameters for the zinc-blende GaN (110) surface. Materials Science and Engineering B, v. 59, n. 1-3, p. 258-260, 1999Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(98)00348-1. Acesso em: 16 nov. 2025.
APA
Alves, H. W. L., Alves, J. L. A., Silva, J. L. F. da, Leite, J. R., & Nogueira, R. A. (1999). Theoretical LEED parameters for the zinc-blende GaN (110) surface. Materials Science and Engineering B, 59( 1-3), 258-260. doi:10.1016/s0921-5107(98)00348-1
NLM
Alves HWL, Alves JLA, Silva JLF da, Leite JR, Nogueira RA. Theoretical LEED parameters for the zinc-blende GaN (110) surface [Internet]. Materials Science and Engineering B. 1999 ; 59( 1-3): 258-260.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(98)00348-1
Vancouver
Alves HWL, Alves JLA, Silva JLF da, Leite JR, Nogueira RA. Theoretical LEED parameters for the zinc-blende GaN (110) surface [Internet]. Materials Science and Engineering B. 1999 ; 59( 1-3): 258-260.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(98)00348-1
Artigo de periodico
Sub-Bandgap spectroscopy of CVD Diamond (1997)
Rohrer, E; Graeff, Carlos Frederico de Oliveira; Nebel, C E; Stutzmann, M; Güttler, H; Zuchai, R
Source: Materials Science and Engineering B. Unidade: FFCLRP
Subjects: MEDICINA FÍSICA, FÍSICA, ESPECTROSCOPIA
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ABNT
ROHRER, E et al. Sub-Bandgap spectroscopy of CVD Diamond. Materials Science and Engineering B, v. 46, p. 115-118, 1997Tradução . . Acesso em: 16 nov. 2025.
APA
Rohrer, E., Graeff, C. F. de O., Nebel, C. E., Stutzmann, M., Güttler, H., & Zuchai, R. (1997). Sub-Bandgap spectroscopy of CVD Diamond. Materials Science and Engineering B, 46, 115-118.
NLM
Rohrer E, Graeff CF de O, Nebel CE, Stutzmann M, Güttler H, Zuchai R. Sub-Bandgap spectroscopy of CVD Diamond. Materials Science and Engineering B. 1997 ; 46 115-118.[citado 2025 nov. 16 ]
Vancouver
Rohrer E, Graeff CF de O, Nebel CE, Stutzmann M, Güttler H, Zuchai R. Sub-Bandgap spectroscopy of CVD Diamond. Materials Science and Engineering B. 1997 ; 46 115-118.[citado 2025 nov. 16 ]
Artigo de periodico
Atomic structure of the 'GaN(100, 110,111)' surfaces (1997)
Alves, J L A; Alves, H W L; Oliveira, C de; Valadao, R D S C; Leite, J. R.
Source: Materials Science and Engineering B. Unidade: IF
Subjects: ÁTOMOS, FISICA DOS MATERIAIS E MECANICA
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ABNT
ALVES, J L A et al. Atomic structure of the 'GaN(100, 110,111)' surfaces. Materials Science and Engineering B, v. 43, p. 288-291, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0921-5107(96)01869-7. Acesso em: 16 nov. 2025.
APA
Alves, J. L. A., Alves, H. W. L., Oliveira, C. de, Valadao, R. D. S. C., & Leite, J. R. (1997). Atomic structure of the 'GaN(100, 110,111)' surfaces. Materials Science and Engineering B, 43, 288-291. doi:10.1016/s0921-5107(96)01869-7
NLM
Alves JLA, Alves HWL, Oliveira C de, Valadao RDSC, Leite JR. Atomic structure of the 'GaN(100, 110,111)' surfaces [Internet]. Materials Science and Engineering B. 1997 ; 43 288-291.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(96)01869-7
Vancouver
Alves JLA, Alves HWL, Oliveira C de, Valadao RDSC, Leite JR. Atomic structure of the 'GaN(100, 110,111)' surfaces [Internet]. Materials Science and Engineering B. 1997 ; 43 288-291.[citado 2025 nov. 16 ] Available from: https://doi.org/10.1016/s0921-5107(96)01869-7
Trabalho de evento-resumo periodico
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells (1995)
Tabata, A; Ceschin, A M; Quivy, A. A.; Levine, Alexandre ; Leite, J. R.; Enderlein, R; Oliveira, J. B. B.; Laureto, E; Goncalves, J L
Source: Materials Science and Engineering B. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 16 nov. 2025. , 1995
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2025 nov. 16 ]
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2025 nov. 16 ]
Artigo de periodico
Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice (1995)
Basmaji, Pierre; Gusev, G M; Lubyshev, D I; Silva, Marcelo de Assumpção Pereira da ; Rossi, J C; Nastaushev, Y V; Baklanov, M R
Source: Materials Science and Engineering B. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
BASMAJI, Pierre et al. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, v. 35, p. 322-4, 1995Tradução . . Acesso em: 16 nov. 2025.
APA
Basmaji, P., Gusev, G. M., Lubyshev, D. I., Silva, M. de A. P. da, Rossi, J. C., Nastaushev, Y. V., & Baklanov, M. R. (1995). Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, 35, 322-4.
NLM
Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2025 nov. 16 ]
Vancouver
Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2025 nov. 16 ]
Artigo de periodico
Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices (1995)
Pusep, Yuri A ; Silva, S W; Galzerani, J C; Lubyshev, D I; Basmaji, Pierre; Milekhin, A G; Preobrazhenskii, V V; Semyagin, B R; Marahovka, I I
Source: Materials Science and Engineering B. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B, v. 35, p. 180-3, 1995Tradução . . Acesso em: 16 nov. 2025.
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., Basmaji, P., Milekhin, A. G., et al. (1995). Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B, 35, 180-3.
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P, Milekhin AG, Preobrazhenskii VV, Semyagin BR, Marahovka II. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B. 1995 ;35 180-3.[citado 2025 nov. 16 ]
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P, Milekhin AG, Preobrazhenskii VV, Semyagin BR, Marahovka II. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B. 1995 ;35 180-3.[citado 2025 nov. 16 ]

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