Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice

Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice (1995)

Authors:
USP affiliated authors: BASMAJI, PIERRE - IFSC ; SILVA, MARCELO DE ASSUMPCAO PEREIRA DA - IFSC
Unidade: IFSC
Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA
Language: Inglês
Imprenta:
- Publisher place: Lausanne
- Date published: 1995
Source:
- Título: Materials Science and Engineering B
- Volume/Número/Paginação/Ano: v.35, p.322-4, 1995

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ABNT

BASMAJI, Pierre et al. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, v. 35, p. 322-4, 1995Tradução . . Acesso em: 10 nov. 2024.
APA

Basmaji, P., Gusev, G. M., Lubyshev, D. I., Silva, M. de A. P. da, Rossi, J. C., Nastaushev, Y. V., & Baklanov, M. R. (1995). Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B, 35, 322-4.
NLM

Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2024 nov. 10 ]
Vancouver

Basmaji P, Gusev GM, Lubyshev DI, Silva M de AP da, Rossi JC, Nastaushev YV, Baklanov MR. Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot lattice. Materials Science and Engineering B. 1995 ;35 322-4.[citado 2024 nov. 10 ]