Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices (1995)
- Authors:
- Autor USP: BASMAJI, PIERRE - IFSC
- Unidade: IFSC
- Subjects: MATÉRIA CONDENSADA; MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS); MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Source:
- Título: Materials Science and Engineering B
- Volume/Número/Paginação/Ano: v.35, p.180-3, 1995
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ABNT
PUSEP, Yuri A et al. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B, v. 35, p. 180-3, 1995Tradução . . Acesso em: 12 mar. 2026. -
APA
Pusep, Y. A., Silva, S. W., Galzerani, J. C., Lubyshev, D. I., Basmaji, P., Milekhin, A. G., et al. (1995). Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B, 35, 180-3. -
NLM
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P, Milekhin AG, Preobrazhenskii VV, Semyagin BR, Marahovka II. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B. 1995 ;35 180-3.[citado 2026 mar. 12 ] -
Vancouver
Pusep YA, Silva SW, Galzerani JC, Lubyshev DI, Basmaji P, Milekhin AG, Preobrazhenskii VV, Semyagin BR, Marahovka II. Atomic-scale characterization of interfaces in the 'GA''AS' / 'AL''GA''AS' superlattices. Materials Science and Engineering B. 1995 ;35 180-3.[citado 2026 mar. 12 ] - Origem da luminescencia visivel do silicio poroso
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