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Artigo de periodico
Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
Patricio, M. A. Tito; LaPierre, R. R.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 09 nov. 2025.
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.5085493
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.5085493
Artigo de periodico
Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells (2017)
Ullah, Saeed; Gusev, Guennadii Michailovich; Bakarov, A K; Gonzalez Hernandez, Felix Guillermo
Source: Journal of Applied Physics. Unidade: IF
Subjects: CAMPO MAGNÉTICO, POÇOS QUÂNTICOS
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ABNT
ULLAH, Saeed et al. Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells. Journal of Applied Physics, v. 121, n. 20, p. 205703/1-205703/7, 2017Tradução . . Disponível em: https://doi.org/10.1063/1.4984118. Acesso em: 09 nov. 2025.
APA
Ullah, S., Gusev, G. M., Bakarov, A. K., & Gonzalez Hernandez, F. G. (2017). Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells. Journal of Applied Physics, 121( 20), 205703/1-205703/7. doi:10.1063/1.4984118
NLM
Ullah S, Gusev GM, Bakarov AK, Gonzalez Hernandez FG. Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells [Internet]. Journal of Applied Physics. 2017 ; 121( 20): 205703/1-205703/7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4984118
Vancouver
Ullah S, Gusev GM, Bakarov AK, Gonzalez Hernandez FG. Large anisotropic spin relaxation time of exciton bound to donor states in triple quantum wells [Internet]. Journal of Applied Physics. 2017 ; 121( 20): 205703/1-205703/7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4984118
Artigo de periodico
Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
Tito, M. A.; Pusep, Yuri A ; Gold, A.; Teodoro, M. D.; Marques, G. E.; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 09 nov. 2025.
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4942854
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4942854
Artigo de periodico
Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers (2016)
Tavares, B. G. M.; Tito, M. A.; Pusep, Yuri A
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
TAVARES, B. G. M. e TITO, M. A. e PUSEP, Yuri A. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, v. 119, n. 23, p. 234305-1-234305-4, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4954161. Acesso em: 09 nov. 2025.
APA
Tavares, B. G. M., Tito, M. A., & Pusep, Y. A. (2016). Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers. Journal of Applied Physics, 119( 23), 234305-1-234305-4. doi:10.1063/1.4954161
NLM
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4954161
Vancouver
Tavares BGM, Tito MA, Pusep YA. Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers [Internet]. Journal of Applied Physics. 2016 ; 119( 23): 234305-1-234305-4.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4954161
Artigo de periodico
Carrier transfer in vertically stacked quantum ring-quantum dot chains (2015)
Mazur, Yu. I.; Lopes-Oliveira, V.; Souza, L. D.; Lopez-Richard, V.; Teodoro, M. D.; Dorogan, V. G.; Benamara, M.; Wu, J.; Tarasov, G. G.; Marega Junior, Euclydes ; Wang, Z. M.; Marques, G. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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ABNT
MAZUR, Yu. I. et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, v. 117, n. 15, p. 154307-1-154307-9, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4918544. Acesso em: 09 nov. 2025.
APA
Mazur, Y. I., Lopes-Oliveira, V., Souza, L. D., Lopez-Richard, V., Teodoro, M. D., Dorogan, V. G., et al. (2015). Carrier transfer in vertically stacked quantum ring-quantum dot chains. Journal of Applied Physics, 117( 15), 154307-1-154307-9. doi:10.1063/1.4918544
NLM
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4918544
Vancouver
Mazur YI, Lopes-Oliveira V, Souza LD, Lopez-Richard V, Teodoro MD, Dorogan VG, Benamara M, Wu J, Tarasov GG, Marega Junior E, Wang ZM, Marques GE, Salamo GJ. Carrier transfer in vertically stacked quantum ring-quantum dot chains [Internet]. Journal of Applied Physics. 2015 ; 117( 15): 154307-1-154307-9.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4918544
Artigo de periodico
Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains (2014)
Kondratenko, S. V.; Vakulenko, O. V.; Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Benamara, M.; Ware, M. E.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
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KONDRATENKO, S. V. et al. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, v. No 2014, n. 19, p. 193707-1-193707-11, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4902311. Acesso em: 09 nov. 2025.
APA
Kondratenko, S. V., Vakulenko, O. V., Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Benamara, M., et al. (2014). Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains. Journal of Applied Physics, No 2014( 19), 193707-1-193707-11. doi:10.1063/1.4902311
NLM
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4902311
Vancouver
Kondratenko SV, Vakulenko OV, Mazur YI, Dorogan VG, Marega Junior E, Benamara M, Ware ME, Salamo GJ. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains [Internet]. Journal of Applied Physics. 2014 ; No 2014( 19): 193707-1-193707-11.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4902311
Artigo de periodico
Spectroscopic properties and quantum cutting in Tb3+–Yb3+ co-doped ZrO2 nanocrystals (2013)
Terra, I. A. A.; Borrero-Gonzalez, L. J.; Carvalho, J. M.; Terrile, Maria Cristina; Felinto, Maria Claudia França da Cunha; Brito, Hermi Felinto de ; Nunes, Luiz Antônio de Oliveira
Source: Journal of Applied Physics. Unidades: IFSC, IQ
Subjects: NANOTECNOLOGIA, POÇOS QUÂNTICOS, ESPECTROSCOPIA, DIFRAÇÃO POR RAIOS X
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ABNT
TERRA, I. A. A. et al. Spectroscopic properties and quantum cutting in Tb3+–Yb3+ co-doped ZrO2 nanocrystals. Journal of Applied Physics, v. Fe 2013, n. 7, p. 073105-1-073105-6, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4792743. Acesso em: 09 nov. 2025.
APA
Terra, I. A. A., Borrero-Gonzalez, L. J., Carvalho, J. M., Terrile, M. C., Felinto, M. C. F. da C., Brito, H. F. de, & Nunes, L. A. de O. (2013). Spectroscopic properties and quantum cutting in Tb3+–Yb3+ co-doped ZrO2 nanocrystals. Journal of Applied Physics, Fe 2013( 7), 073105-1-073105-6. doi:10.1063/1.4792743
NLM
Terra IAA, Borrero-Gonzalez LJ, Carvalho JM, Terrile MC, Felinto MCF da C, Brito HF de, Nunes LA de O. Spectroscopic properties and quantum cutting in Tb3+–Yb3+ co-doped ZrO2 nanocrystals [Internet]. Journal of Applied Physics. 2013 ; Fe 2013( 7): 073105-1-073105-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4792743
Vancouver
Terra IAA, Borrero-Gonzalez LJ, Carvalho JM, Terrile MC, Felinto MCF da C, Brito HF de, Nunes LA de O. Spectroscopic properties and quantum cutting in Tb3+–Yb3+ co-doped ZrO2 nanocrystals [Internet]. Journal of Applied Physics. 2013 ; Fe 2013( 7): 073105-1-073105-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4792743
Artigo de periodico
Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures (2013)
Mazur, Yu. I.; Dorogan, V. G.; Marega Junior, Euclydes ; Guzun, D.; Ware, M. E.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Lienau, C.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, TEMPERATURA, ÓPTICA ELETRÔNICA
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MAZUR, Yu. I. et al. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, v. 113, n. Ja 2013, p. 034309-1-034309-8, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4779686. Acesso em: 09 nov. 2025.
APA
Mazur, Y. I., Dorogan, V. G., Marega Junior, E., Guzun, D., Ware, M. E., Zhuchenko, Z. Y., et al. (2013). Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures. Journal of Applied Physics, 113( Ja 2013), 034309-1-034309-8. doi:10.1063/1.4779686
NLM
Mazur YI, Dorogan VG, Marega Junior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4779686
Vancouver
Mazur YI, Dorogan VG, Marega Junior E, Guzun D, Ware ME, Zhuchenko ZY, Tarasov GG, Lienau C, Salamo GJ. Effect of tunneling transfer on thermal redistribution of carriers in hybrid dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( Ja 2013): 034309-1-034309-8.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4779686
Artigo de periodico
Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures (2013)
Guzun, D.; Mazur, Yu. I.; Dorogan, V. G.; Ware, M. E.; Marega Junior, Euclydes ; Tarasov, G. G.; Lienau, C.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATERIAIS NANOESTRUTURADOS, POÇOS QUÂNTICOS, ÓPTICA ELETRÔNICA
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ABNT
GUZUN, D. et al. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures. Journal of Applied Physics, v. 113, n. 15, p. 154304-1-154304-5, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4801891. Acesso em: 09 nov. 2025.
APA
Guzun, D., Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Junior, E., Tarasov, G. G., et al. (2013). Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures. Journal of Applied Physics, 113( 15), 154304-1-154304-5. doi:10.1063/1.4801891
NLM
Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( 15): 154304-1-154304-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4801891
Vancouver
Guzun D, Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Tarasov GG, Lienau C, Salamo GJ. Effect of resonant tunneling on exciton dynamics in coupled dot-well nanostructures [Internet]. Journal of Applied Physics. 2013 ; 113( 15): 154304-1-154304-5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4801891
Artigo de periodico
Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well (2012)
Santos, L. Fernandes dos; Pusep, Yuri A ; Bakarov, A. K.; Toropov, A. I.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
SANTOS, L. Fernandes dos et al. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well. Journal of Applied Physics, v. 111, n. 12, p. 123523-1-123523-6, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4730769. Acesso em: 09 nov. 2025.
APA
Santos, L. F. dos, Pusep, Y. A., Bakarov, A. K., & Toropov, A. I. (2012). Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well. Journal of Applied Physics, 111( 12), 123523-1-123523-6. doi:10.1063/1.4730769
NLM
Santos LF dos, Pusep YA, Bakarov AK, Toropov AI. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well [Internet]. Journal of Applied Physics. 2012 ; 111( 12): 123523-1-123523-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4730769
Vancouver
Santos LF dos, Pusep YA, Bakarov AK, Toropov AI. Valence band tail states in disordered superlattices embedded in wide parabolic 'AL''GA''AS' well [Internet]. Journal of Applied Physics. 2012 ; 111( 12): 123523-1-123523-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4730769
Artigo de periodico
Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures (2012)
Mazur, Yu. I.; Dorogan, V. G.; Ware, M. E.; Marega Junior, Euclydes ; Lytvyn, P. M.; Zhuchenko, Z. Ya.; Tarasov, G. G.; Salamo, G. J.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, POLARIZAÇÃO
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ABNT
MAZUR, Yu. I. et al. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, v. 112, n. 8, p. 084314-1-084314-7, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4759318. Acesso em: 09 nov. 2025.
APA
Mazur, Y. I., Dorogan, V. G., Ware, M. E., Marega Junior, E., Lytvyn, P. M., Zhuchenko, Z. Y., et al. (2012). Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures. Journal of Applied Physics, 112( 8), 084314-1-084314-7. doi:10.1063/1.4759318
NLM
Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4759318
Vancouver
Mazur YI, Dorogan VG, Ware ME, Marega Junior E, Lytvyn PM, Zhuchenko ZY, Tarasov GG, Salamo GJ. Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures [Internet]. Journal of Applied Physics. 2012 ; 112( 8): 084314-1-084314-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4759318
Artigo de periodico
Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells (2012)
Faria Junior, P. E.; Sipahi, Guilherme Matos
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, LUMINESCÊNCIA, BLENDAS, ZINCO
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ABNT
FARIA JUNIOR, P. E. e SIPAHI, Guilherme Matos. Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells. Journal of Applied Physics, v. 112, n. 10, p. 103716-1-103716-10, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4767511. Acesso em: 09 nov. 2025.
APA
Faria Junior, P. E., & Sipahi, G. M. (2012). Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells. Journal of Applied Physics, 112( 10), 103716-1-103716-10. doi:10.1063/1.4767511
NLM
Faria Junior PE, Sipahi GM. Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells [Internet]. Journal of Applied Physics. 2012 ; 112( 10): 103716-1-103716-10.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4767511
Vancouver
Faria Junior PE, Sipahi GM. Band structure calculations of 'IN'P wurtzite/zinc-blende quantum wells [Internet]. Journal of Applied Physics. 2012 ; 112( 10): 103716-1-103716-10.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4767511
Artigo de periodico
Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy (2012)
Ferri, F. A. ; Coelho, L. N.; Kunets, Vasyl P; Salamo, Gregory J. ; Marega Junior, Euclydes
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: POÇOS QUÂNTICOS, FERROMAGNETISMO, FILMES FINOS
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ABNT
FERRI, F. A. et al. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy. Journal of Applied Physics, v. 112, n. 3, p. 034317-1-034317-6, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4745904. Acesso em: 09 nov. 2025.
APA
Ferri, F. A., Coelho, L. N., Kunets, V. P., Salamo, G. J., & Marega Junior, E. (2012). Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy. Journal of Applied Physics, 112( 3), 034317-1-034317-6. doi:10.1063/1.4745904
NLM
Ferri FA, Coelho LN, Kunets VP, Salamo GJ, Marega Junior E. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy [Internet]. Journal of Applied Physics. 2012 ; 112( 3): 034317-1-034317-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4745904
Vancouver
Ferri FA, Coelho LN, Kunets VP, Salamo GJ, Marega Junior E. Structural, morphological, and magnetic characterization of 'IN IND. 1-x''MN IND. x''AS' quantum dots grown by molecular beam epitaxy [Internet]. Journal of Applied Physics. 2012 ; 112( 3): 034317-1-034317-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4745904
Artigo de periodico
Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices (2011)
Pusep, Yuri A ; Gold, A.; Mamani, N. C.; Godoy, M. P. F.; Gobato, Y. Galvão; LaPierre, R. R.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA
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ABNT
PUSEP, Yuri A et al. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, v. 110, n. 7, p. 073706-1-073706-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3646365. Acesso em: 09 nov. 2025.
APA
Pusep, Y. A., Gold, A., Mamani, N. C., Godoy, M. P. F., Gobato, Y. G., & LaPierre, R. R. (2011). Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, 110( 7), 073706-1-073706-6. doi:10.1063/1.3646365
NLM
Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3646365
Vancouver
Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3646365
Artigo de periodico
Magnetotransport in a wide parabolic well superimposed with a superlattice (2011)
Pusep, Yuri A ; Gusev, Guennadii Michailovich ; Bakarov, A. K.; Toropov, A. I.; Portal, J. C.
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: POÇOS QUÂNTICOS, EFEITO HALL, SEMICONDUTORES (SISTEMAS), FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PUSEP, Yuri A et al. Magnetotransport in a wide parabolic well superimposed with a superlattice. Journal of Applied Physics, v. 109, n. 10, p. 102403-1-102403-3, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3576134. Acesso em: 09 nov. 2025.
APA
Pusep, Y. A., Gusev, G. M., Bakarov, A. K., Toropov, A. I., & Portal, J. C. (2011). Magnetotransport in a wide parabolic well superimposed with a superlattice. Journal of Applied Physics, 109( 10), 102403-1-102403-3. doi:10.1063/1.3576134
NLM
Pusep YA, Gusev GM, Bakarov AK, Toropov AI, Portal JC. Magnetotransport in a wide parabolic well superimposed with a superlattice [Internet]. Journal of Applied Physics. 2011 ; 109( 10): 102403-1-102403-3.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3576134
Vancouver
Pusep YA, Gusev GM, Bakarov AK, Toropov AI, Portal JC. Magnetotransport in a wide parabolic well superimposed with a superlattice [Internet]. Journal of Applied Physics. 2011 ; 109( 10): 102403-1-102403-3.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3576134
Artigo de periodico
Influence of temperature and excitation procedure on the athermal behavior of Nd3+-doped phosphate glass: thermal lens, interferometric, and calorimetric measurements (2009)
Astrath, N. G. C.; Barboza, M. J.; Medina, A. N.; Bento, A. C.; Baesso, M. L.; Silva, W. F.; Jacinto, C.; Catunda, Tomaz
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: ÓPTICA (PROPRIEDADES), POÇOS QUÂNTICOS, LENTES, FLUORESCÊNCIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ASTRATH, N. G. C. et al. Influence of temperature and excitation procedure on the athermal behavior of Nd3+-doped phosphate glass: thermal lens, interferometric, and calorimetric measurements. Journal of Applied Physics, v. 106, n. 7, p. 073511-1-073511-6, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3234396. Acesso em: 09 nov. 2025.
APA
Astrath, N. G. C., Barboza, M. J., Medina, A. N., Bento, A. C., Baesso, M. L., Silva, W. F., et al. (2009). Influence of temperature and excitation procedure on the athermal behavior of Nd3+-doped phosphate glass: thermal lens, interferometric, and calorimetric measurements. Journal of Applied Physics, 106( 7), 073511-1-073511-6. doi:10.1063/1.3234396
NLM
Astrath NGC, Barboza MJ, Medina AN, Bento AC, Baesso ML, Silva WF, Jacinto C, Catunda T. Influence of temperature and excitation procedure on the athermal behavior of Nd3+-doped phosphate glass: thermal lens, interferometric, and calorimetric measurements [Internet]. Journal of Applied Physics. 2009 ; 106( 7): 073511-1-073511-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3234396
Vancouver
Astrath NGC, Barboza MJ, Medina AN, Bento AC, Baesso ML, Silva WF, Jacinto C, Catunda T. Influence of temperature and excitation procedure on the athermal behavior of Nd3+-doped phosphate glass: thermal lens, interferometric, and calorimetric measurements [Internet]. Journal of Applied Physics. 2009 ; 106( 7): 073511-1-073511-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3234396
Artigo de periodico
Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots (2008)
Pagnossin, Ivan Ramos; Meikap, A K; Quivy, A. A.; Gusev, Guennadii Michailovich
Source: Journal of Applied Physics. Unidade: IF
Subjects: FILMES FINOS, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAGNOSSIN, Ivan Ramos et al. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots. Journal of Applied Physics, v. 104, n. 7, p. 073723/1-073723/6, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2996034. Acesso em: 09 nov. 2025.
APA
Pagnossin, I. R., Meikap, A. K., Quivy, A. A., & Gusev, G. M. (2008). Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots. Journal of Applied Physics, 104( 7), 073723/1-073723/6. doi:10.1063/1.2996034
NLM
Pagnossin IR, Meikap AK, Quivy AA, Gusev GM. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots [Internet]. Journal of Applied Physics. 2008 ; 104( 7): 073723/1-073723/6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2996034
Vancouver
Pagnossin IR, Meikap AK, Quivy AA, Gusev GM. Electron dephasing scattering rate in two-dimensional GaAs/InGaAs heterostructures with embedded InAs quantum dots [Internet]. Journal of Applied Physics. 2008 ; 104( 7): 073723/1-073723/6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2996034
Artigo de periodico
Many-body effects in wide parabolic AlGaAs quantum wells (2007)
Tabata, A; Martins, M R; Oliveira, J B B; Lamas, T. E.; Duarte, C A; Silva, Euzi Conceicao Fernandes da; Gusev, Guennadii Michailovich
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, ESPALHAMENTO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A et al. Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, v. 102, n. 9, p. 093715/1-093715/5, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2809418. Acesso em: 09 nov. 2025.
APA
Tabata, A., Martins, M. R., Oliveira, J. B. B., Lamas, T. E., Duarte, C. A., Silva, E. C. F. da, & Gusev, G. M. (2007). Many-body effects in wide parabolic AlGaAs quantum wells. Journal of Applied Physics, 102( 9), 093715/1-093715/5. doi:10.1063/1.2809418
NLM
Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2809418
Vancouver
Tabata A, Martins MR, Oliveira JBB, Lamas TE, Duarte CA, Silva ECF da, Gusev GM. Many-body effects in wide parabolic AlGaAs quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 9): 093715/1-093715/5.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2809418
Artigo de periodico
The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy (2007)
Rudno-Rudziñski, W; Sek, G; Misiewicz, J; Lamas, T. E.; Quivy, A. A.
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, EFEITO MOSSBAUER, LASER
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RUDNO-RUDZIÑSKI, W et al. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, v. 101, n. 7, p. 0735018/1-073518/4, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2714686. Acesso em: 09 nov. 2025.
APA
Rudno-Rudziñski, W., Sek, G., Misiewicz, J., Lamas, T. E., & Quivy, A. A. (2007). The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy. Journal of Applied Physics, 101( 7), 0735018/1-073518/4. doi:10.1063/1.2714686
NLM
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2714686
Vancouver
Rudno-Rudziñski W, Sek G, Misiewicz J, Lamas TE, Quivy AA. The formation of self-assembled InAs/GaAs quantum dots emitting at 1.3 'mü'm followed by photoreflectance spectroscopy [Internet]. Journal of Applied Physics. 2007 ; 101( 7): 0735018/1-073518/4.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2714686
Artigo de periodico
Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells (2007)
Cunha, J F R; Silva, S W da; Morais, P C; Lamas, T. E.; Quivy, A. A.
Source: Journal of Applied Physics. Unidade: IF
Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CUNHA, J F R et al. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, v. 102, n. 4, p. 0437048/1-043704/6, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2769963. Acesso em: 09 nov. 2025.
APA
Cunha, J. F. R., Silva, S. W. da, Morais, P. C., Lamas, T. E., & Quivy, A. A. (2007). Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells. Journal of Applied Physics, 102( 4), 0437048/1-043704/6. doi:10.1063/1.2769963
NLM
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2769963
Vancouver
Cunha JFR, Silva SW da, Morais PC, Lamas TE, Quivy AA. Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wells [Internet]. Journal of Applied Physics. 2007 ; 102( 4): 0437048/1-043704/6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.2769963

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