Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well (2019)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.5085493
- Subjects: FOTOLUMINESCÊNCIA; POÇOS QUÂNTICOS; SEMICONDUTORES
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 125, n. 15, p. 155703-01-155703-06, Apr. 2019
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PATRICIO, M. A. Tito e LAPIERRE, R. R. e PUSEP, Yuri A. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, v. 125, n. 15, p. 155703-01-155703-06, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5085493. Acesso em: 09 jan. 2026. -
APA
Patricio, M. A. T., LaPierre, R. R., & Pusep, Y. A. (2019). Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well. Journal of Applied Physics, 125( 15), 155703-01-155703-06. doi:10.1063/1.5085493 -
NLM
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2026 jan. 09 ] Available from: https://doi.org/10.1063/1.5085493 -
Vancouver
Patricio MAT, LaPierre RR, Pusep YA. Inter-valley phonon-assisted Auger recombination in InGaAs/InP quantum well [Internet]. Journal of Applied Physics. 2019 ; 125( 15): 155703-01-155703-06.[citado 2026 jan. 09 ] Available from: https://doi.org/10.1063/1.5085493 - Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices
- Shake-up effect in photoluminescence of integer quantum hall system formed in InGaAs/InP quantum wells
- Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices
- Auger recombination processes in InGaAs/InP quantum wells
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- The Scientific World Journal: Condensed Matter Physics
- Conduction mechanisms in GaAs nanowire photovoltaics
- High mobilities limited by interface roughness in InGaAs/InP heterostructures
- Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices
Informações sobre o DOI: 10.1063/1.5085493 (Fonte: oaDOI API)
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