Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells (2016)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.4942854
- Subjects: FOTOLUMINESCÊNCIA; POÇOS QUÂNTICOS; SEMICONDUTORES
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2016
- Source:
- Título: Journal of Applied Physics
- ISSN: 0021-8979
- Volume/Número/Paginação/Ano: v. 119, n. 9, p. 094301-1-094301-8, Mar. 2016
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 09 jan. 2026. -
APA
Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854 -
NLM
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2026 jan. 09 ] Available from: https://doi.org/10.1063/1.4942854 -
Vancouver
Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2026 jan. 09 ] Available from: https://doi.org/10.1063/1.4942854 - Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices
- Shake-up effect in photoluminescence of integer quantum hall system formed in InGaAs/InP quantum wells
- Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices
- Auger recombination processes in InGaAs/InP quantum wells
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- The Scientific World Journal: Condensed Matter Physics
- Conduction mechanisms in GaAs nanowire photovoltaics
- High mobilities limited by interface roughness in InGaAs/InP heterostructures
- Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices
Informações sobre o DOI: 10.1063/1.4942854 (Fonte: oaDOI API)
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
PROD024679_2748114.pdf |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
