Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices (2006)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- Subjects: ÓPTICA; SUPERCONDUTIVIDADE; ESPECTROS
- Language: Inglês
- Imprenta:
- Publisher place: College Park
- Date published: 2006
- Source:
- Título: Physical Review B
- ISSN: 1098-0121
- Volume/Número/Paginação/Ano: v. 73, n. 23, p. 235344-1-235344-6, Jun. 2006
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ABNT
PUSEP, Yuri A. et al. Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices. Physical Review B, v. 73, n. Ju 2006, p. 235344-1-235344-6, 2006Tradução . . Acesso em: 03 out. 2024. -
APA
Pusep, Y. A., Rodrigues, A. de G., Galzerani, J. C., Cornet, D. M., Comedi, D., & LaPierre, R. R. (2006). Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices. Physical Review B, 73( Ju 2006), 235344-1-235344-6. -
NLM
Pusep YA, Rodrigues A de G, Galzerani JC, Cornet DM, Comedi D, LaPierre RR. Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices. Physical Review B. 2006 ; 73( Ju 2006): 235344-1-235344-6.[citado 2024 out. 03 ] -
Vancouver
Pusep YA, Rodrigues A de G, Galzerani JC, Cornet DM, Comedi D, LaPierre RR. Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices. Physical Review B. 2006 ; 73( Ju 2006): 235344-1-235344-6.[citado 2024 out. 03 ] - Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
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- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
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