Quantum interference and localization in disordered GaAs/AlGaAs superlattices (2005)
- Autor:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1063/1.1994451
- Subjects: SEMICONDUTORES; EFEITO RAMAN; DIFRAÇÃO POR RAIOS X; MAGNETISMO; POLARIZAÇÃO
- Language: Inglês
- Imprenta:
- Publisher: American Institute of Physics - AIP
- Publisher place: Melville
- Date published: 2005
- Source:
- Título: AIP Conference Proceedings
- ISSN: 0094-243X
- Volume/Número/Paginação/Ano: v. 772, n. 1, p. 1007-1008, June 2005
- Conference titles: International Conference on the Physics of Semiconductors - ICPS
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
PUSEP, Yuri A. Quantum interference and localization in disordered GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. Disponível em: https://doi.org/10.1063/1.1994451. Acesso em: 29 dez. 2025. , 2005 -
APA
Pusep, Y. A. (2005). Quantum interference and localization in disordered GaAs/AlGaAs superlattices. AIP Conference Proceedings. Melville: American Institute of Physics - AIP. doi:10.1063/1.1994451 -
NLM
Pusep YA. Quantum interference and localization in disordered GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 1007-1008.[citado 2025 dez. 29 ] Available from: https://doi.org/10.1063/1.1994451 -
Vancouver
Pusep YA. Quantum interference and localization in disordered GaAs/AlGaAs superlattices [Internet]. AIP Conference Proceedings. 2005 ; 772( 1): 1007-1008.[citado 2025 dez. 29 ] Available from: https://doi.org/10.1063/1.1994451 - Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- The Scientific World Journal: Condensed Matter Physics
- The Scientific World Journal: condensed matter physics
- Coherence of elementary excitations in disordered electron systems
- Delocalization-localization transition of plasmons in disordered superlattices
- Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells
- The Scientific World Journal: condensed matter physics
- Conduction mechanisms in GaAs nanowire photovoltaics
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
Informações sobre o DOI: 10.1063/1.1994451 (Fonte: oaDOI API)
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
