High mobilities limited by interface roughness in InGaAs/InP heterostructures (2009)
- Authors:
- USP affiliated author: POUSSEP, IOURI - IFSC
- School: IFSC
- Subjects: SEMICONDUTORES; MAGNETISMO; NANOTECNOLOGIA; FÍSICA DE PARTÍCULAS
- Language: Inglês
- Imprenta:
- Publisher: Universidade Federal do Paraná
- Place of publication: Curitiba
- Date published: 2009
- Source:
- Título do periódico: Abstracts
- Conference title: Brazilian Workshop on Semiconductor Physics - BWSP
-
ABNT
PUSEP, Yuri A.; GOZZO, G. C.; LA PIERRE, R. R.; GOLD, A. High mobilities limited by interface roughness in InGaAs/InP heterostructures. Anais.. Curitiba: Universidade Federal do Paraná, 2009. -
APA
Pusep, Y. A., Gozzo, G. C., La Pierre, R. R., & Gold, A. (2009). High mobilities limited by interface roughness in InGaAs/InP heterostructures. In Abstracts. Curitiba: Universidade Federal do Paraná. -
NLM
Pusep YA, Gozzo GC, La Pierre RR, Gold A. High mobilities limited by interface roughness in InGaAs/InP heterostructures. Abstracts. 2009 ; -
Vancouver
Pusep YA, Gozzo GC, La Pierre RR, Gold A. High mobilities limited by interface roughness in InGaAs/InP heterostructures. Abstracts. 2009 ; - Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
- The Scientific World Journal: Condensed Matter Physics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- The Scientific World Journal: condensed matter physics
- The Scientific World Journal: condensed matter physics
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