High mobilities limited by interface roughness in InGaAs/InP heterostructures

High mobilities limited by interface roughness in InGaAs/InP heterostructures (2009)

Authors:
USP affiliated authors: POUSSEP, IOURI - IFSC
Unidades: IFSC
Subjects: SEMICONDUTORES; MAGNETISMO; NANOTECNOLOGIA; FÍSICA DE PARTÍCULAS
Language: Inglês
Imprenta:
- Publisher: Universidade Federal do Paraná
- Place of publication: Curitiba
- Date published: 2009
Source:
- Título do periódico: Abstracts
Conference title: Brazilian Workshop on Semiconductor Physics - BWSP

A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

ABNT

PUSEP, Yuri A.; GOZZO, G. C.; LA PIERRE, R. R.; GOLD, A. High mobilities limited by interface roughness in InGaAs/InP heterostructures. Anais.. Curitiba: Universidade Federal do Paraná, 2009.
APA

Pusep, Y. A., Gozzo, G. C., La Pierre, R. R., & Gold, A. (2009). High mobilities limited by interface roughness in InGaAs/InP heterostructures. In Abstracts. Curitiba: Universidade Federal do Paraná.
NLM

Pusep YA, Gozzo GC, La Pierre RR, Gold A. High mobilities limited by interface roughness in InGaAs/InP heterostructures. Abstracts. 2009 ;
Vancouver

Pusep YA, Gozzo GC, La Pierre RR, Gold A. High mobilities limited by interface roughness in InGaAs/InP heterostructures. Abstracts. 2009 ;