Filtros : "LaPierre, R. R." "Indexado no Science Citation Index" Limpar

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  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, SEMICONDUTORES

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      TITO, M. A. et al. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, v. 119, n. 9, p. 094301-1-094301-8, 2016Tradução . . Disponível em: https://doi.org/10.1063/1.4942854. Acesso em: 14 set. 2024.
    • APA

      Tito, M. A., Pusep, Y. A., Gold, A., Teodoro, M. D., Marques, G. E., & LaPierre, R. R. (2016). Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells. Journal of Applied Physics, 119( 9), 094301-1-094301-8. doi:10.1063/1.4942854
    • NLM

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.4942854
    • Vancouver

      Tito MA, Pusep YA, Gold A, Teodoro MD, Marques GE, LaPierre RR. Recombination kinetics of photogenerated electrons in InGaAs/InP quantum wells [Internet]. Journal of Applied Physics. 2016 ; 119( 9): 094301-1-094301-8.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.4942854
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: POÇOS QUÂNTICOS, CAMPO MAGNÉTICO, FOTOLUMINESCÊNCIA

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      PUSEP, Yuri A. e TITO, M. A. e LAPIERRE, R. R. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics: Condensed Matter, v. 28, n. 17, p. 175602-1-175602-7, 2016Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/28/17/175602. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Tito, M. A., & LaPierre, R. R. (2016). Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics: Condensed Matter, 28( 17), 175602-1-175602-7. doi:10.1088/0953-8984/28/17/175602
    • NLM

      Pusep YA, Tito MA, LaPierre RR. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 17): 175602-1-175602-7.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0953-8984/28/17/175602
    • Vancouver

      Pusep YA, Tito MA, LaPierre RR. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 17): 175602-1-175602-7.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0953-8984/28/17/175602
  • Source: Journal of Physics: Condensed Matter. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, CAMPO MAGNÉTICO

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      PUSEP, Yuri A. et al. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices. Journal of Physics: Condensed Matter, v. 27, n. 24, p. 245601-1-245601-6, 2015Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/27/24/245601. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Tavares, B. G. M., Tito, M. A., Santos, L. F. dos, & LaPierre, R. R. (2015). Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices. Journal of Physics: Condensed Matter, 27( 24), 245601-1-245601-6. doi:10.1088/0953-8984/27/24/245601
    • NLM

      Pusep YA, Tavares BGM, Tito MA, Santos LF dos, LaPierre RR. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices [Internet]. Journal of Physics: Condensed Matter. 2015 ; 27( 24): 245601-1-245601-6.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0953-8984/27/24/245601
    • Vancouver

      Pusep YA, Tavares BGM, Tito MA, Santos LF dos, LaPierre RR. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices [Internet]. Journal of Physics: Condensed Matter. 2015 ; 27( 24): 245601-1-245601-6.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0953-8984/27/24/245601
  • Source: Journal of Physics D. Unidade: IFSC

    Assunto: FOTOLUMINESCÊNCIA

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      SANTOS, L. Fernandes dos et al. Temperature dependence of photoluminescence from Γ-Γ and Γ-X minibands in lattice matched InGaAs/InP superlattices. Journal of Physics D, v. No 2015, n. 46, p. 465101-1-465101-5, 2015Tradução . . Disponível em: https://doi.org/10.1088/0022-3727/48/46/465101. Acesso em: 14 set. 2024.
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      Santos, L. F. dos, Pusep, Y. A., Zanatta, A. R., & LaPierre, R. R. (2015). Temperature dependence of photoluminescence from Γ-Γ and Γ-X minibands in lattice matched InGaAs/InP superlattices. Journal of Physics D, No 2015( 46), 465101-1-465101-5. doi:10.1088/0022-3727/48/46/465101
    • NLM

      Santos LF dos, Pusep YA, Zanatta AR, LaPierre RR. Temperature dependence of photoluminescence from Γ-Γ and Γ-X minibands in lattice matched InGaAs/InP superlattices [Internet]. Journal of Physics D. 2015 ; No 2015( 46): 465101-1-465101-5.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0022-3727/48/46/465101
    • Vancouver

      Santos LF dos, Pusep YA, Zanatta AR, LaPierre RR. Temperature dependence of photoluminescence from Γ-Γ and Γ-X minibands in lattice matched InGaAs/InP superlattices [Internet]. Journal of Physics D. 2015 ; No 2015( 46): 465101-1-465101-5.[citado 2024 set. 14 ] Available from: https://doi.org/10.1088/0022-3727/48/46/465101
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS

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      PUSEP, Yuri A. et al. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, v. 113, n. 16, p. 164311-1-164311-4, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4803494. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Arakaki, H., Souza, C. A. de, Rodrigues, A. D., Haapamaki, C. M., & LaPierre, R. R. (2013). Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires. Journal of Applied Physics, 113( 16), 164311-1-164311-4. doi:10.1063/1.4803494
    • NLM

      Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.4803494
    • Vancouver

      Pusep YA, Arakaki H, Souza CA de, Rodrigues AD, Haapamaki CM, LaPierre RR. Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Journal of Applied Physics. 2013 ; 113( 16): 164311-1-164311-4.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.4803494
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, POÇOS QUÂNTICOS, FOTOLUMINESCÊNCIA

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      PUSEP, Yuri A. et al. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, v. 110, n. 7, p. 073706-1-073706-6, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3646365. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Gold, A., Mamani, N. C., Godoy, M. P. F., Gobato, Y. G., & LaPierre, R. R. (2011). Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices. Journal of Applied Physics, 110( 7), 073706-1-073706-6. doi:10.1063/1.3646365
    • NLM

      Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.3646365
    • Vancouver

      Pusep YA, Gold A, Mamani NC, Godoy MPF, Gobato YG, LaPierre RR. Electron and hole scattering in short-period 'IN'GA'AS'/'IN'P superlattices [Internet]. Journal of Applied Physics. 2011 ; 110( 7): 073706-1-073706-6.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.3646365
  • Source: Applied Physics Letters. Unidade: IFSC

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, ELÉTRONS (ESTUDO)

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      PUSEP, Yuri A et al. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, v. 96, n. 11, p. 113106-1-113106-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3364138. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Mohseni, P. K., LaPierre, R. R., Bakarov, A. K., & Toropov, A. I. (2010). A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, 96( 11), 113106-1-113106-3. doi:10.1063/1.3364138
    • NLM

      Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.3364138
    • Vancouver

      Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.3364138
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, MATERIAIS NANOESTRUTURADOS, ESPECTROSCOPIA RAMAN

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      MOHSENI, P. K. et al. Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, v. 106, n. 12, p. 124306-1-124306-7, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3269724. Acesso em: 14 set. 2024.
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      Mohseni, P. K., Rodrigues, A. D., Galzerani, J. C., Pusep, Y. A., & LaPierre, R. R. (2009). Structural and optical analysis of GaAsP/GaP core-shell nanowires. Journal of Applied Physics, 106( 12), 124306-1-124306-7. doi:10.1063/1.3269724
    • NLM

      Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.3269724
    • Vancouver

      Mohseni PK, Rodrigues AD, Galzerani JC, Pusep YA, LaPierre RR. Structural and optical analysis of GaAsP/GaP core-shell nanowires [Internet]. Journal of Applied Physics. 2009 ; 106( 12): 124306-1-124306-7.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.3269724
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: DIFRAÇÃO POR RAIOS X, ÓPTICA ELETRÔNICA, SEMICONDUTORES, FOTOLUMINESCÊNCIA

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      CORNET, D. M. et al. High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, v. 100, n. 4, p. 043518-1-043518-6, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2335689. Acesso em: 14 set. 2024.
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      Cornet, D. M., LaPierre, R. R., Comedi, D., & Pusep, Y. A. (2006). High resolution x-ray diffraction analysis of InGaAs/InP superlattices. Journal of Applied Physics, 100( 4), 043518-1-043518-6. doi:10.1063/1.2335689
    • NLM

      Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.2335689
    • Vancouver

      Cornet DM, LaPierre RR, Comedi D, Pusep YA. High resolution x-ray diffraction analysis of InGaAs/InP superlattices [Internet]. Journal of Applied Physics. 2006 ; 100( 4): 043518-1-043518-6.[citado 2024 set. 14 ] Available from: https://doi.org/10.1063/1.2335689
  • Source: Brazilian Journal of Physics. Unidade: IFSC

    Subjects: SEMICONDUTORES, ESPECTROSCOPIA RAMAN

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      PUSEP, Yuri A. et al. Evidence of the miniband formation in InGaAs/InP superlattices. Brazilian Journal of Physics, v. 36, n. 3B, p. Se 2006, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000600028. Acesso em: 14 set. 2024.
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      Pusep, Y. A., Rodrigues, A. G., Galzerani, J. C., Comedi, D., & LaPierre, R. R. (2006). Evidence of the miniband formation in InGaAs/InP superlattices. Brazilian Journal of Physics, 36( 3B), Se 2006. doi:10.1590/s0103-97332006000600028
    • NLM

      Pusep YA, Rodrigues AG, Galzerani JC, Comedi D, LaPierre RR. Evidence of the miniband formation in InGaAs/InP superlattices [Internet]. Brazilian Journal of Physics. 2006 ; 36( 3B): Se 2006.[citado 2024 set. 14 ] Available from: https://doi.org/10.1590/s0103-97332006000600028
    • Vancouver

      Pusep YA, Rodrigues AG, Galzerani JC, Comedi D, LaPierre RR. Evidence of the miniband formation in InGaAs/InP superlattices [Internet]. Brazilian Journal of Physics. 2006 ; 36( 3B): Se 2006.[citado 2024 set. 14 ] Available from: https://doi.org/10.1590/s0103-97332006000600028
  • Source: Physical Review B. Unidade: IFSC

    Subjects: ÓPTICA, SUPERCONDUTIVIDADE, ESPECTROS

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      PUSEP, Yuri A. et al. Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices. Physical Review B, v. 73, n. Ju 2006, p. 235344-1-235344-6, 2006Tradução . . Acesso em: 14 set. 2024.
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      Pusep, Y. A., Rodrigues, A. de G., Galzerani, J. C., Cornet, D. M., Comedi, D., & LaPierre, R. R. (2006). Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices. Physical Review B, 73( Ju 2006), 235344-1-235344-6.
    • NLM

      Pusep YA, Rodrigues A de G, Galzerani JC, Cornet DM, Comedi D, LaPierre RR. Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices. Physical Review B. 2006 ; 73( Ju 2006): 235344-1-235344-6.[citado 2024 set. 14 ]
    • Vancouver

      Pusep YA, Rodrigues A de G, Galzerani JC, Cornet DM, Comedi D, LaPierre RR. Miniband effect o optical vibrations in short-period 'In IND. x''Ga IND. 1-x'As/InP superlattices. Physical Review B. 2006 ; 73( Ju 2006): 235344-1-235344-6.[citado 2024 set. 14 ]

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