Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells (2016)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1088/0953-8984/28/17/175602
- Subjects: POÇOS QUÂNTICOS; CAMPO MAGNÉTICO; FOTOLUMINESCÊNCIA
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Physics: Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 28, n. 17, p. 175602-1-175602-7, May 2016
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
PUSEP, Yuri A e TITO, M. A. e LAPIERRE, R. R. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics: Condensed Matter, v. 28, n. 17, p. 175602-1-175602-7, 2016Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/28/17/175602. Acesso em: 22 jan. 2026. -
APA
Pusep, Y. A., Tito, M. A., & LaPierre, R. R. (2016). Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells. Journal of Physics: Condensed Matter, 28( 17), 175602-1-175602-7. doi:10.1088/0953-8984/28/17/175602 -
NLM
Pusep YA, Tito MA, LaPierre RR. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 17): 175602-1-175602-7.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1088/0953-8984/28/17/175602 -
Vancouver
Pusep YA, Tito MA, LaPierre RR. Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells [Internet]. Journal of Physics: Condensed Matter. 2016 ; 28( 17): 175602-1-175602-7.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1088/0953-8984/28/17/175602 - Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers
- Interface roughness in short-period InGaAs/InP superlattices
- Evidence of the miniband formation in InGaAs/InP superlattices
- Coherence of elementary excitations in disordered GaAs/AlGaAs superlattices
- Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As
- Structural and optical analysis of GaAsP/GaP core-shell nanowires
- Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices
- Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system
- Determination of mobility edge in presence of metal-to-insulator transition
- Localized-to-extended-states transition below the Fermi level
Informações sobre o DOI: 10.1088/0953-8984/28/17/175602 (Fonte: oaDOI API)
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