Evidence of the miniband formation in InGaAs/InP superlattices (2006)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1590/s0103-97332006000600028
- Subjects: SEMICONDUTORES; ESPECTROSCOPIA RAMAN
- Language: Inglês
- Imprenta:
- Source:
- Título: Brazilian Journal of Physics
- ISSN: 0103-9733
- Volume/Número/Paginação/Ano: v. 36, n. 3B, p. 905-907, Sep. 2006
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
PUSEP, Yuri A et al. Evidence of the miniband formation in InGaAs/InP superlattices. Brazilian Journal of Physics, v. 36, n. 3B, p. Se 2006, 2006Tradução . . Disponível em: https://doi.org/10.1590/s0103-97332006000600028. Acesso em: 22 jan. 2026. -
APA
Pusep, Y. A., Rodrigues, A. G., Galzerani, J. C., Comedi, D., & LaPierre, R. R. (2006). Evidence of the miniband formation in InGaAs/InP superlattices. Brazilian Journal of Physics, 36( 3B), Se 2006. doi:10.1590/s0103-97332006000600028 -
NLM
Pusep YA, Rodrigues AG, Galzerani JC, Comedi D, LaPierre RR. Evidence of the miniband formation in InGaAs/InP superlattices [Internet]. Brazilian Journal of Physics. 2006 ; 36( 3B): Se 2006.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1590/s0103-97332006000600028 -
Vancouver
Pusep YA, Rodrigues AG, Galzerani JC, Comedi D, LaPierre RR. Evidence of the miniband formation in InGaAs/InP superlattices [Internet]. Brazilian Journal of Physics. 2006 ; 36( 3B): Se 2006.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1590/s0103-97332006000600028 - Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers
- Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells
- Interface roughness in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered GaAs/AlGaAs superlattices
- Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As
- Structural and optical analysis of GaAsP/GaP core-shell nanowires
- Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices
- Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system
- Determination of mobility edge in presence of metal-to-insulator transition
- Localized-to-extended-states transition below the Fermi level
Informações sobre o DOI: 10.1590/s0103-97332006000600028 (Fonte: oaDOI API)
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