Determination of mobility edge in presence of metal-to-insulator transition (2017)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1016/j.spmi.2016.12.060
- Subjects: POÇOS QUÂNTICOS; ELÉTRONS; FOTOLUMINESCÊNCIA
- Keywords: Metal-to-insulator transition; Interface; Time-resolved photoluminescence
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Superlattices and Microstructures
- ISSN: 0749-6036
- Volume/Número/Paginação/Ano: v. 104, p. 156-161, Apr. 2017
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
TITO, M. A. e PUSEP, Yuri A. Determination of mobility edge in presence of metal-to-insulator transition. Superlattices and Microstructures, v. 104, p. 156-161, 2017Tradução . . Disponível em: https://doi.org/10.1016/j.spmi.2016.12.060. Acesso em: 19 set. 2024. -
APA
Tito, M. A., & Pusep, Y. A. (2017). Determination of mobility edge in presence of metal-to-insulator transition. Superlattices and Microstructures, 104, 156-161. doi:10.1016/j.spmi.2016.12.060 -
NLM
Tito MA, Pusep YA. Determination of mobility edge in presence of metal-to-insulator transition [Internet]. Superlattices and Microstructures. 2017 ; 104 156-161.[citado 2024 set. 19 ] Available from: https://doi.org/10.1016/j.spmi.2016.12.060 -
Vancouver
Tito MA, Pusep YA. Determination of mobility edge in presence of metal-to-insulator transition [Internet]. Superlattices and Microstructures. 2017 ; 104 156-161.[citado 2024 set. 19 ] Available from: https://doi.org/10.1016/j.spmi.2016.12.060 - Transition from localized to extended states below the Fermi level in GaAs/AlGaAs multiple quantum well heterostructures
- Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
- Plasmon- like oscillations of the electrons localized by the DX centers in doped 'Al IND.X''Ga IND.1-X'As
- Quantum interference and localization in disordered GaAs/AlGaAs superlattices
- Coherency of elementary excitations in disordered electron system
- Miniband effects in short-period InGaAs/InP superlattices
- Coherence of elementary excitations in disordered electron systems
- Conduction mechanisms in GaAs nanowire photovoltaics
- Optical probe of quantum hall state in disordered superlattices embedded in a wide parabolic well
- Circularly polarized photoluminescence of GaAs/AlGaAs quantum hall bilayers
Informações sobre o DOI: 10.1016/j.spmi.2016.12.060 (Fonte: oaDOI API)
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