Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices (2015)
- Authors:
- Autor USP: POUSSEP, IOURI - IFSC
- Unidade: IFSC
- DOI: 10.1088/0953-8984/27/24/245601
- Subjects: FOTOLUMINESCÊNCIA; CAMPO MAGNÉTICO
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Physics: Condensed Matter
- ISSN: 0953-8984
- Volume/Número/Paginação/Ano: v. 27, n. 24, p. 245601-1-245601-6, June 2015
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
PUSEP, Yuri A et al. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices. Journal of Physics: Condensed Matter, v. 27, n. 24, p. 245601-1-245601-6, 2015Tradução . . Disponível em: https://doi.org/10.1088/0953-8984/27/24/245601. Acesso em: 22 jan. 2026. -
APA
Pusep, Y. A., Tavares, B. G. M., Tito, M. A., Santos, L. F. dos, & LaPierre, R. R. (2015). Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices. Journal of Physics: Condensed Matter, 27( 24), 245601-1-245601-6. doi:10.1088/0953-8984/27/24/245601 -
NLM
Pusep YA, Tavares BGM, Tito MA, Santos LF dos, LaPierre RR. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices [Internet]. Journal of Physics: Condensed Matter. 2015 ; 27( 24): 245601-1-245601-6.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1088/0953-8984/27/24/245601 -
Vancouver
Pusep YA, Tavares BGM, Tito MA, Santos LF dos, LaPierre RR. Magnetic field driven interminiband charge transfer in InGaAs/InP superlattices [Internet]. Journal of Physics: Condensed Matter. 2015 ; 27( 24): 245601-1-245601-6.[citado 2026 jan. 22 ] Available from: https://doi.org/10.1088/0953-8984/27/24/245601 - Influence of energy structure on recombination lifetime in GaAs/AlGaAs multilayers
- Shake-up effect in photoluminescence of integer quantum Hall system formed in InGaAs/InP quantum wells
- Interface roughness in short-period InGaAs/InP superlattices
- Evidence of the miniband formation in InGaAs/InP superlattices
- Coherence of elementary excitations in disordered GaAs/AlGaAs superlattices
- Plasmon-like oscillations of the electrons localized by the DX centers in doped 'Al IND.x''Ga IND.1-x'As
- Structural and optical analysis of GaAsP/GaP core-shell nanowires
- Effects of annealing on electrical coupling in a multilayer InAS/GaAs quantum dots system
- Determination of mobility edge in presence of metal-to-insulator transition
- Localized-to-extended-states transition below the Fermi level
Informações sobre o DOI: 10.1088/0953-8984/27/24/245601 (Fonte: oaDOI API)
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