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Artigo de periodico
Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures (2000)
Pusep, Yuri A ; Silva, M. T. O.; Galzerani, J. C.; Rodrigues, S. C. P.; Scolfaro, L. M. R.; Lima, A. P.; Quivy, A. A.; Leite, J. R.; Moshegov, N. T.; Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
PUSEP, Yuri A et al. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, v. 87, n. 4, p. 1825-1831, 2000Tradução . . Disponível em: https://doi.org/10.1063/1.372097. Acesso em: 09 nov. 2025.
APA
Pusep, Y. A., Silva, M. T. O., Galzerani, J. C., Rodrigues, S. C. P., Scolfaro, L. M. R., Lima, A. P., et al. (2000). Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures. Journal of Applied Physics, 87( 4), 1825-1831. doi:10.1063/1.372097
NLM
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.372097
Vancouver
Pusep YA, Silva MTO, Galzerani JC, Rodrigues SCP, Scolfaro LMR, Lima AP, Quivy AA, Leite JR, Moshegov NT, Basmaji P. Raman measurements of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures [Internet]. Journal of Applied Physics. 2000 ; 87( 4): 1825-1831.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.372097
Artigo de periodico
Raman study of topology of InAs/GaAs self-assembled quantum dots (1999)
Zanelatto, G; Pusep, Yuri A ; Moshegov, N T; Toropov, A I; Basmaji, Pierre; Galzerani, J C
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
ZANELATTO, G et al. Raman study of topology of InAs/GaAs self-assembled quantum dots. Journal of Applied Physics, v. 86, n. 8, p. 4387-4389, 1999Tradução . . Disponível em: https://doi.org/10.1063/1.371375. Acesso em: 09 nov. 2025.
APA
Zanelatto, G., Pusep, Y. A., Moshegov, N. T., Toropov, A. I., Basmaji, P., & Galzerani, J. C. (1999). Raman study of topology of InAs/GaAs self-assembled quantum dots. Journal of Applied Physics, 86( 8), 4387-4389. doi:10.1063/1.371375
NLM
Zanelatto G, Pusep YA, Moshegov NT, Toropov AI, Basmaji P, Galzerani JC. Raman study of topology of InAs/GaAs self-assembled quantum dots [Internet]. Journal of Applied Physics. 1999 ;86( 8): 4387-4389.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.371375
Vancouver
Zanelatto G, Pusep YA, Moshegov NT, Toropov AI, Basmaji P, Galzerani JC. Raman study of topology of InAs/GaAs self-assembled quantum dots [Internet]. Journal of Applied Physics. 1999 ;86( 8): 4387-4389.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.371375
Artigo de periodico
Hydrostatic pressure studies of GaAs tunnel diodes (1998)
Beji, L; El Jani, B; Gibart, P; Portal, J C; Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS), SEMICONDUTORES
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ABNT
BEJI, L et al. Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics, v. 83, n. 10, p. 5573-5575, 1998Tradução . . Disponível em: https://doi.org/10.1063/1.367394. Acesso em: 09 nov. 2025.
APA
Beji, L., El Jani, B., Gibart, P., Portal, J. C., & Basmaji, P. (1998). Hydrostatic pressure studies of GaAs tunnel diodes. Journal of Applied Physics, 83( 10), 5573-5575. doi:10.1063/1.367394
NLM
Beji L, El Jani B, Gibart P, Portal JC, Basmaji P. Hydrostatic pressure studies of GaAs tunnel diodes [Internet]. Journal of Applied Physics. 1998 ; 83( 10): 5573-5575.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.367394
Vancouver
Beji L, El Jani B, Gibart P, Portal JC, Basmaji P. Hydrostatic pressure studies of GaAs tunnel diodes [Internet]. Journal of Applied Physics. 1998 ; 83( 10): 5573-5575.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.367394
Artigo de periodico
Characterization of GaAs wire crystals grown on porous silicon by Raman scattering (1997)
Silva, S W da; Lubyshev, D I; Basmaji, Pierre; Pusep, Yuri A ; Pizani, Paulo Sérgio; Galzerani, J C; Katiyar, R S; Morell, G
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, SUPERFÍCIE FÍSICA, SEMICONDUTORES
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ABNT
SILVA, S W da et al. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, v. 82, n. 12, p. 6247-6250, 1997Tradução . . Disponível em: https://doi.org/10.1063/1.366511. Acesso em: 09 nov. 2025.
APA
Silva, S. W. da, Lubyshev, D. I., Basmaji, P., Pusep, Y. A., Pizani, P. S., Galzerani, J. C., et al. (1997). Characterization of GaAs wire crystals grown on porous silicon by Raman scattering. Journal of Applied Physics, 82( 12), 6247-6250. doi:10.1063/1.366511
NLM
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.366511
Vancouver
Silva SW da, Lubyshev DI, Basmaji P, Pusep YA, Pizani PS, Galzerani JC, Katiyar RS, Morell G. Characterization of GaAs wire crystals grown on porous silicon by Raman scattering [Internet]. Journal of Applied Physics. 1997 ; 82( 12): 6247-6250.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.366511
Artigo de periodico
Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy (1991)
Basmaji, Pierre
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA
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ABNT
BASMAJI, Pierre. Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy. Journal of Applied Physics, v. 70, n. 5 , p. se 1991, 1991Tradução . . Acesso em: 09 nov. 2025.
APA
Basmaji, P. (1991). Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy. Journal of Applied Physics, 70( 5 ), se 1991.
NLM
Basmaji P. Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy. Journal of Applied Physics. 1991 ;70( 5 ): se 1991.[citado 2025 nov. 09 ]
Vancouver
Basmaji P. Selenium-dx center-doped 'AL IND.X''GA IND.1-X''AS' grown by molecular beam epitaxy. Journal of Applied Physics. 1991 ;70( 5 ): se 1991.[citado 2025 nov. 09 ]
Artigo de periodico
Electronic transport in periodically 'DELTA'-doped 'GA''AS' layers (1991)
Egues, José Carlos ; Barbosa, J C; Notari, A C; Basmaji, Pierre; Ioriatti Júnior, Lidério Citrângulo; Ranz, E; Portal, J C
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: SEMICONDUTORES
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ABNT
EGUES, José Carlos et al. Electronic transport in periodically 'DELTA'-doped 'GA''AS' layers. Journal of Applied Physics, v. 70, n. 7 , p. 3678-80, 1991Tradução . . Acesso em: 09 nov. 2025.
APA
Egues, J. C., Barbosa, J. C., Notari, A. C., Basmaji, P., Ioriatti Júnior, L. C., Ranz, E., & Portal, J. C. (1991). Electronic transport in periodically 'DELTA'-doped 'GA''AS' layers. Journal of Applied Physics, 70( 7 ), 3678-80.
NLM
Egues JC, Barbosa JC, Notari AC, Basmaji P, Ioriatti Júnior LC, Ranz E, Portal JC. Electronic transport in periodically 'DELTA'-doped 'GA''AS' layers. Journal of Applied Physics. 1991 ;70( 7 ): 3678-80.[citado 2025 nov. 09 ]
Vancouver
Egues JC, Barbosa JC, Notari AC, Basmaji P, Ioriatti Júnior LC, Ranz E, Portal JC. Electronic transport in periodically 'DELTA'-doped 'GA''AS' layers. Journal of Applied Physics. 1991 ;70( 7 ): 3678-80.[citado 2025 nov. 09 ]
Artigo de periodico
Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy (1990)
Bernussi, A A; Iikawa, F; Motisuke, P; Basmaji, Pierre; Siu Li, Máximo ; Hipólito, Oscar
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
BERNUSSI, A A et al. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics, v. 67, n. 9 , p. 4149-51, 1990Tradução . . Acesso em: 09 nov. 2025.
APA
Bernussi, A. A., Iikawa, F., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics, 67( 9 ), 4149-51.
NLM
Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics. 1990 ;67( 9 ): 4149-51.[citado 2025 nov. 09 ]
Vancouver
Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics. 1990 ;67( 9 ): 4149-51.[citado 2025 nov. 09 ]

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