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Artigo de periodico
Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)
Brubach, J. ; Huang, T.-Y. ; Borrely, T ; Greenhill, C ; Walrath, J ; Fedele, G; Yang, Y.-C. ; Zimmerman, A. ; Goldman, R. S.
Source: Applied Physics Letters. Unidade: IF
Subjects: DISPOSITIVOS ELETRÔNICOS, SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 04 nov. 2025.
APA
Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331
NLM
Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331
Vancouver
Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331
Artigo de periodico
Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene (2014)
Shakouri, Kh.; Vasilopoulos, P.; Vargiamidis, V.; Hai, Guo-Qiang ; Peeters, F. M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SPINTRÔNICA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SHAKOURI, Kh. et al. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene. Applied Physics Letters, v. 104, n. 21, p. 213109-1-213109-4, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4878509. Acesso em: 04 nov. 2025.
APA
Shakouri, K., Vasilopoulos, P., Vargiamidis, V., Hai, G. -Q., & Peeters, F. M. (2014). Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene. Applied Physics Letters, 104( 21), 213109-1-213109-4. doi:10.1063/1.4878509
NLM
Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene [Internet]. Applied Physics Letters. 2014 ; 104( 21): 213109-1-213109-4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4878509
Vancouver
Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene [Internet]. Applied Physics Letters. 2014 ; 104( 21): 213109-1-213109-4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4878509
Artigo de periodico
Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices (2013)
Caroena, G; Machado, Wanda Valle Marcondes; Assali, Lucy Vitoria Credidio ; Justo Filho, João Francisco
Source: Applied Physics Letters. Unidades: EP, IF
Subjects: SEMICONDUTORES, SPINTRÔNICA
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ABNT
CAROENA, G et al. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices. Applied Physics Letters, v. 102, n. 6, p. 062101, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4791787. Acesso em: 04 nov. 2025.
APA
Caroena, G., Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2013). Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices. Applied Physics Letters, 102( 6), 062101. doi:10.1063/1.4791787
NLM
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices [Internet]. Applied Physics Letters. 2013 ; 102( 6): 062101.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4791787
Vancouver
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices [Internet]. Applied Physics Letters. 2013 ; 102( 6): 062101.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4791787
Artigo de periodico
Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Guimarães, Francisco Eduardo Gontijo ; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Applied Physics Letters. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SEMICONDUTORES
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 04 nov. 2025.
APA
Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288
NLM
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4816288
Vancouver
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4816288
Artigo de periodico
Digital magnetic heterostructures based on GaN using GGA-1/2 approach (2012)
Santos, J P T; Marques, M; Pelá, R R; Teles, L. K.; Ferreira, Luiz Guimarães
Source: Applied Physics Letters. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, FERROMAGNETISMO, SEMICONDUTORES, FILMES FINOS, NÍQUEL
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ABNT
SANTOS, J P T et al. Digital magnetic heterostructures based on GaN using GGA-1/2 approach. Applied Physics Letters, v. 101, n. 11, p. 112403, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4751285. Acesso em: 04 nov. 2025.
APA
Santos, J. P. T., Marques, M., Pelá, R. R., Teles, L. K., & Ferreira, L. G. (2012). Digital magnetic heterostructures based on GaN using GGA-1/2 approach. Applied Physics Letters, 101( 11), 112403. doi:10.1063/1.4751285
NLM
Santos JPT, Marques M, Pelá RR, Teles LK, Ferreira LG. Digital magnetic heterostructures based on GaN using GGA-1/2 approach [Internet]. Applied Physics Letters. 2012 ;101( 11): 112403.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4751285
Vancouver
Santos JPT, Marques M, Pelá RR, Teles LK, Ferreira LG. Digital magnetic heterostructures based on GaN using GGA-1/2 approach [Internet]. Applied Physics Letters. 2012 ;101( 11): 112403.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4751285
Artigo de periodico
GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations (2012)
Pela, R R; Marques, M; Ferreira, Luiz Guimarães; Furthmüller, Jurgen; Teles, L. K.
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, SEMICONDUTORES (PROPRIEDADES MAGNÉTICAS)
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ABNT
PELA, R R et al. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, v. 100, n. 20, p. 202408/1-202408/4, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4718602. Acesso em: 04 nov. 2025.
APA
Pela, R. R., Marques, M., Ferreira, L. G., Furthmüller, J., & Teles, L. K. (2012). GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, 100( 20), 202408/1-202408/4. doi:10.1063/1.4718602
NLM
Pela RR, Marques M, Ferreira LG, Furthmüller J, Teles LK. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations [Internet]. Applied Physics Letters. 2012 ; 100( 20): 202408/1-202408/4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4718602
Vancouver
Pela RR, Marques M, Ferreira LG, Furthmüller J, Teles LK. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations [Internet]. Applied Physics Letters. 2012 ; 100( 20): 202408/1-202408/4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4718602
Artigo de periodico
A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential (2010)
Pusep, Yuri A ; Mohseni, P. K.; LaPierre, R. R.; Bakarov, A. K.; Toropov, A. I.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, ELÉTRONS (ESTUDO)
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ABNT
PUSEP, Yuri A et al. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, v. 96, n. 11, p. 113106-1-113106-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3364138. Acesso em: 04 nov. 2025.
APA
Pusep, Y. A., Mohseni, P. K., LaPierre, R. R., Bakarov, A. K., & Toropov, A. I. (2010). A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, 96( 11), 113106-1-113106-3. doi:10.1063/1.3364138
NLM
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
Vancouver
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
Artigo de periodico
Anomalous lattice parameter of magnetic semiconductor alloys (2009)
Caetano, Clovis; Marques, Marcelo; Ferreira, Luiz Guimarães; Teles, L. K.
Source: Applied Physics Letters. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
CAETANO, Clovis et al. Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, v. 94, n. 24, p. 241914/1-241914/3. 2009, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3154560. Acesso em: 04 nov. 2025.
APA
Caetano, C., Marques, M., Ferreira, L. G., & Teles, L. K. (2009). Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, 94( 24), 241914/1-241914/3. 2009. doi:10.1063/1.3154560
NLM
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3154560
Vancouver
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3154560
Artigo de periodico
Interface roughness in short-period InGaAs/InP superlattices (2008)
Pusep, Yuri A ; Gozzo, G. C.; La Pierre, R. R.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, FÍSICA DA MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, MAGNETISMO
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ABNT
PUSEP, Yuri A e GOZZO, G. C. e LA PIERRE, R. R. Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, v. 93, n. 24, p. 242104-1-242104-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.3050531. Acesso em: 04 nov. 2025.
APA
Pusep, Y. A., Gozzo, G. C., & La Pierre, R. R. (2008). Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, 93( 24), 242104-1-242104-3. doi:10.1063/1.3050531
NLM
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3050531
Vancouver
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3050531
Artigo de periodico
Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells (2008)
Li, Jun; Chang, Kai; Hai, Guo-Qiang ; Chan, K. S.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÁTOMOS (ESTRUTURA), SEMICONDUTORES, MECÂNICA QUÂNTICA, SPIN, HIBRIDIZAÇÃO
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ABNT
LI, Jun et al. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells. Applied Physics Letters, v. 92, n. 15, p. 152107-1-152107-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2909544. Acesso em: 04 nov. 2025.
APA
Li, J., Chang, K., Hai, G. -Q., & Chan, K. S. (2008). Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells. Applied Physics Letters, 92( 15), 152107-1-152107-3. doi:10.1063/1.2909544
NLM
Li J, Chang K, Hai G-Q, Chan KS. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells [Internet]. Applied Physics Letters. 2008 ; 92( 15): 152107-1-152107-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2909544
Vancouver
Li J, Chang K, Hai G-Q, Chan KS. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells [Internet]. Applied Physics Letters. 2008 ; 92( 15): 152107-1-152107-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2909544
Artigo de periodico
Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures (2007)
Oliveira, E. J. F.; Lima, A. T. da Cunha; Boselli, Marco Aurelio; Sipahi, Guilherme Matos ; Rodrigues, S. C. P.; Lima, I. C. da Cunha
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN
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ABNT
OLIVEIRA, E. J. F. et al. Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures. Applied Physics Letters, v. 90, n. 11, p. 112102-1-112102-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2712809. Acesso em: 04 nov. 2025.
APA
Oliveira, E. J. F., Lima, A. T. da C., Boselli, M. A., Sipahi, G. M., Rodrigues, S. C. P., & Lima, I. C. da C. (2007). Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures. Applied Physics Letters, 90( 11), 112102-1-112102-3. doi:10.1063/1.2712809
NLM
Oliveira EJF, Lima AT da C, Boselli MA, Sipahi GM, Rodrigues SCP, Lima IC da C. Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures [Internet]. Applied Physics Letters. 2007 ; 90( 11): 112102-1-112102-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2712809
Vancouver
Oliveira EJF, Lima AT da C, Boselli MA, Sipahi GM, Rodrigues SCP, Lima IC da C. Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures [Internet]. Applied Physics Letters. 2007 ; 90( 11): 112102-1-112102-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2712809
Artigo de periodico
Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings (2007)
Hanke, Michael; Mazur, Yu I.; Marega Junior, Euclydes ; AbuWaar, Z. Y.; Salamo, G. J.; Schäfer, P.; Schmidbauer, M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, ÓPTICA, MODELOS (TRANSFORMAÇÃO), DIFRAÇÃO POR RAIOS X, MAGNETISMO
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ABNT
HANKE, Michael et al. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, v. 91, p. 043103-1-043103-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2760191. Acesso em: 04 nov. 2025.
APA
Hanke, M., Mazur, Y. I., Marega Junior, E., AbuWaar, Z. Y., Salamo, G. J., Schäfer, P., & Schmidbauer, M. (2007). Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, 91, 043103-1-043103-3. doi:10.1063/1.2760191
NLM
Hanke M, Mazur YI, Marega Junior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2760191
Vancouver
Hanke M, Mazur YI, Marega Junior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2760191
Artigo de periodico
Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O (2006)
Marin, I. S. P.; Sipahi, Guilherme Matos ; Boseli, M. A.; Lima, I. C. da Cunha
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN, TEMPERATURA, FERROMAGNETISMO, DENSIDADE, POLARIZAÇÃO
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ABNT
MARIN, I. S. P. et al. Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O. Applied Physics Letters, v. No 2006, n. 19, p. 192101-1-192101-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2370751. Acesso em: 04 nov. 2025.
APA
Marin, I. S. P., Sipahi, G. M., Boseli, M. A., & Lima, I. C. da C. (2006). Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O. Applied Physics Letters, No 2006( 19), 192101-1-192101-3. doi:10.1063/1.2370751
NLM
Marin ISP, Sipahi GM, Boseli MA, Lima IC da C. Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O [Internet]. Applied Physics Letters. 2006 ; No 2006( 19): 192101-1-192101-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2370751
Vancouver
Marin ISP, Sipahi GM, Boseli MA, Lima IC da C. Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O [Internet]. Applied Physics Letters. 2006 ; No 2006( 19): 192101-1-192101-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2370751
Artigo de periodico
Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN (2006)
Marques, M; Scolfaro, Luisa Maria Ribeiro; Teles, L. K.; Furthmüller, Jurgen; Bechstedt, F; Ferreira, L G
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
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ABNT
MARQUES, M et al. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, v. 88, n. 2, p. 022507-1/022507-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2162802. Acesso em: 04 nov. 2025.
APA
Marques, M., Scolfaro, L. M. R., Teles, L. K., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2006). Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, 88( 2), 022507-1/022507-3. doi:10.1063/1.2162802
NLM
Marques M, Scolfaro LMR, Teles LK, Furthmüller J, Bechstedt F, Ferreira LG. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN [Internet]. Applied Physics Letters. 2006 ; 88( 2): 022507-1/022507-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2162802
Vancouver
Marques M, Scolfaro LMR, Teles LK, Furthmüller J, Bechstedt F, Ferreira LG. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN [Internet]. Applied Physics Letters. 2006 ; 88( 2): 022507-1/022507-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2162802
Artigo de periodico-carta/editorial
Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)] (2006)
Hai, Guo-Qiang ; Oliveira, S. S.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA, SEMICONDUTORES, CAMPO MAGNÉTICO
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ABNT
HAI, Guo-Qiang e OLIVEIRA, S. S. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. Melville: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 04 nov. 2025. , 2006
APA
Hai, G. -Q., & Oliveira, S. S. (2006). Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. Melville: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Hai G-Q, Oliveira SS. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. 2006 ; 88( 19): 196101-1-196101-2.[citado 2025 nov. 04 ]
Vancouver
Hai G-Q, Oliveira SS. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. 2006 ; 88( 19): 196101-1-196101-2.[citado 2025 nov. 04 ]
Artigo de periodico
Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films (2005)
Marletta, Alexandre; Miwa, R. H.; Cazati, T.; Guimarães, Francisco Eduardo Gontijo ; Faria, Roberto Mendonça ; Alves, Marcos Veríssimo
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, POLÍMEROS (MATERIAIS)
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ABNT
MARLETTA, Alexandre et al. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films. Applied Physics Letters, v. 86, n. 14, p. 141907-1-141907-2, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1897847. Acesso em: 04 nov. 2025.
APA
Marletta, A., Miwa, R. H., Cazati, T., Guimarães, F. E. G., Faria, R. M., & Alves, M. V. (2005). Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films. Applied Physics Letters, 86( 14), 141907-1-141907-2. doi:10.1063/1.1897847
NLM
Marletta A, Miwa RH, Cazati T, Guimarães FEG, Faria RM, Alves MV. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2005 ; 86( 14): 141907-1-141907-2.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1897847
Vancouver
Marletta A, Miwa RH, Cazati T, Guimarães FEG, Faria RM, Alves MV. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2005 ; 86( 14): 141907-1-141907-2.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1897847
Artigo de periodico
Magnetic properties of MnN: influence of strain and crystal structure (2005)
Marques, M; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Furthmüller, J; Bechstedt, F; Ferreira, L G
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARQUES, M et al. Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, v. 86, n. 16, p. 164105/1-164105/3, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1905787. Acesso em: 04 nov. 2025.
APA
Marques, M., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2005). Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, 86( 16), 164105/1-164105/3. doi:10.1063/1.1905787
NLM
Marques M, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F, Ferreira LG. Magnetic properties of MnN: influence of strain and crystal structure [Internet]. Applied Physics Letters. 2005 ; 86( 16): 164105/1-164105/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1905787
Vancouver
Marques M, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F, Ferreira LG. Magnetic properties of MnN: influence of strain and crystal structure [Internet]. Applied Physics Letters. 2005 ; 86( 16): 164105/1-164105/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1905787
Artigo de periodico
Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers (2004)
Sipahi, Guilherme Matos ; Rodrigues, S. C. P.; Scolfaro, Luisa Maria Ribeiro; Lima, I. C. da Cunha
Source: Applied Physics Letters. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, FERROMAGNETISMO, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIPAHI, Guilherme Matos et al. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers. Applied Physics Letters, v. 85, n. 25, p. 6209-6211, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1840121. Acesso em: 04 nov. 2025.
APA
Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., & Lima, I. C. da C. (2004). Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers. Applied Physics Letters, 85( 25), 6209-6211. doi:10.1063/1.1840121
NLM
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6209-6211.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1840121
Vancouver
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6209-6211.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1840121
Artigo de periodico
Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions (2004)
Chitta, Valmir Antonio ; Coaquira, J A H; Fernandez, J R L; Duarte, C A; Leite, J. R.; Schikora, D; As, D J; Lischka, K; Abramof, E
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, FILMES FINOS, DIFRAÇÃO POR RAIOS X, ESPECTROSCOPIA RAMAN
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CHITTA, Valmir Antonio et al. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, v. 85, n. 17, p. 3777-3779, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1812590. Acesso em: 04 nov. 2025.
APA
Chitta, V. A., Coaquira, J. A. H., Fernandez, J. R. L., Duarte, C. A., Leite, J. R., Schikora, D., et al. (2004). Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions. Applied Physics Letters, 85( 17), 3777-3779. doi:10.1063/1.1812590
NLM
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1812590
Vancouver
Chitta VA, Coaquira JAH, Fernandez JRL, Duarte CA, Leite JR, Schikora D, As DJ, Lischka K, Abramof E. Room temperature ferromagnetism in cubic GaN epilayers implanted with "Mn POT.+" ions [Internet]. Applied Physics Letters. 2004 ; 85( 17): 3777-3779.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1812590
Artigo de periodico
Photoluminescence quenching in Er-doped compounds (2003)
Zanatta, Antonio Ricardo
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA DA MATÉRIA CONDENSADA, LUMINESCÊNCIA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo. Photoluminescence quenching in Er-doped compounds. Applied Physics Letters, v. 82, n. 9, p. 1395-1397, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1557318. Acesso em: 04 nov. 2025.
APA
Zanatta, A. R. (2003). Photoluminescence quenching in Er-doped compounds. Applied Physics Letters, 82( 9), 1395-1397. doi:10.1063/1.1557318
NLM
Zanatta AR. Photoluminescence quenching in Er-doped compounds [Internet]. Applied Physics Letters. 2003 ; 82( 9): 1395-1397.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1557318
Vancouver
Zanatta AR. Photoluminescence quenching in Er-doped compounds [Internet]. Applied Physics Letters. 2003 ; 82( 9): 1395-1397.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1557318

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