Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots

Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)

Authors:
Autor USP: SANTOS, THALES BORRELY DOS - IF
Unidade: IF
DOI: https://doi.org/10.1063/5.0244331
Subjects: DISPOSITIVOS ELETRÔNICOS; SEMICONDUTORES; POÇOS QUÂNTICOS
Keywords: DOPING; ELECTRONIC TRANSPORT; ELECTRONIC BAND STRUCTURE; QUANTUM DOTS; ELECTRONIC DEVICES; SPATIAL DEPENDENCE; MICROSCOPY
Language: Inglês
Imprenta:
- Publisher: Applied Physics Letters
- Publisher place: Melville, NY
- Date published: 2025
Source:
- Título: Applied Physics Letters
- Volume/Número/Paginação/Ano: Volume 126, Issue 11, 112107, 17 March 2025

Informações sobre o DOI: https://doi.org/10.1063/5.0244331 (Fonte: oaDOI API)

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	112107_1_5.0244331.pdf	Direct link

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ABNT

BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 31 dez. 2025.
APA

Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331
NLM

Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 dez. 31 ] Available from: https://doi.org/10.1063/5.0244331
Vancouver

Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 dez. 31 ] Available from: https://doi.org/10.1063/5.0244331