Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices (2013)
- Authors:
- USP affiliated authors: JUSTO FILHO, JOÃO FRANCISCO - EP ; ASSALI, LUCY VITORIA CREDIDIO - IF ; MACHADO, WANDA VALLE MARCONDES - IF ; OLIVEIRA, GLAURA CAROENA AZEVEDO DE - IF
- Unidades: EP; IF
- DOI: 10.1063/1.4791787
- Subjects: SEMICONDUTORES; SPINTRÔNICA
- Language: Inglês
- Source:
- Título: Applied Physics Letters
- Volume/Número/Paginação/Ano: v. 102, n. 6, p. 062101, 2013
- Este periódico é de assinatura
- Este artigo é de acesso aberto
- URL de acesso aberto
- Cor do Acesso Aberto: green
-
ABNT
CAROENA, G et al. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices. Applied Physics Letters, v. 102, n. 6, p. 062101, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4791787. Acesso em: 10 out. 2024. -
APA
Caroena, G., Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2013). Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices. Applied Physics Letters, 102( 6), 062101. doi:10.1063/1.4791787 -
NLM
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices [Internet]. Applied Physics Letters. 2013 ; 102( 6): 062101.[citado 2024 out. 10 ] Available from: https://doi.org/10.1063/1.4791787 -
Vancouver
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices [Internet]. Applied Physics Letters. 2013 ; 102( 6): 062101.[citado 2024 out. 10 ] Available from: https://doi.org/10.1063/1.4791787 - Rare-earth impurities in gallium nitride: the role of the Hubbard potential
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Informações sobre o DOI: 10.1063/1.4791787 (Fonte: oaDOI API)
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