Role of intrinsic defects in the electronic and optical properties of a-HgI2 (2006)
- Authors:
- USP affiliated authors: ASSALI, LUCY VITORIA CREDIDIO - IF ; MACHADO, WANDA VALLE MARCONDES - IF ; JUSTO FILHO, JOÃO FRANCISCO - EP
- Unidades: IF; EP
- DOI: 10.1063/1.2159573
- Subjects: MATÉRIA CONDENSADA; DETETORES; MERCÚRIO (ELEMENTO QUÍMICO); ESTRUTURA ELETRÔNICA
- Language: Inglês
- Imprenta:
- Source:
- Título: Applied Physics Letters
- ISSN: 0003-6951
- Volume/Número/Paginação/Ano: v. 88, n. 1, p. 011918-1/011918-3, 2006
- Este periódico é de assinatura
- Este artigo NÃO é de acesso aberto
- Cor do Acesso Aberto: closed
-
ABNT
AYRES, Frederico et al. Role of intrinsic defects in the electronic and optical properties of a-HgI2. Applied Physics Letters, v. 88, n. 1, p. 011918-1/011918-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2159573. Acesso em: 10 out. 2024. -
APA
Ayres, F., Assali, L. V. C., Machado, W. V. M., & Justo Filho, J. F. (2006). Role of intrinsic defects in the electronic and optical properties of a-HgI2. Applied Physics Letters, 88( 1), 011918-1/011918-3. doi:10.1063/1.2159573 -
NLM
Ayres F, Assali LVC, Machado WVM, Justo Filho JF. Role of intrinsic defects in the electronic and optical properties of a-HgI2 [Internet]. Applied Physics Letters. 2006 ; 88( 1): 011918-1/011918-3.[citado 2024 out. 10 ] Available from: https://doi.org/10.1063/1.2159573 -
Vancouver
Ayres F, Assali LVC, Machado WVM, Justo Filho JF. Role of intrinsic defects in the electronic and optical properties of a-HgI2 [Internet]. Applied Physics Letters. 2006 ; 88( 1): 011918-1/011918-3.[citado 2024 out. 10 ] Available from: https://doi.org/10.1063/1.2159573 - Structural and electronic properties of Ni-related active centers in diamond
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Informações sobre o DOI: 10.1063/1.2159573 (Fonte: oaDOI API)
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