Rare-earth impurities in gallium nitride: the role of the Hubbard potential (2012)
- Authors:
- USP affiliated authors: MACHADO, WANDA VALLE MARCONDES - IF ; ASSALI, LUCY VITORIA CREDIDIO - IF ; JUSTO FILHO, JOAO FRANCISCO - EP ; OLIVEIRA, GLAURA CAROENA AZEVEDO DE - IF
- Unidades: IF; EP
- DOI: 10.1016/j.diamond.2012.06.001
- Subjects: FOTOLUMINESCÊNCIA; SEMICONDUTORES; TERRAS RARAS
- Language: Inglês
- Imprenta:
- Source:
- Título: Diamond and Related Materials
- Volume/Número/Paginação/Ano: v. 27-28, p. 64-67, 2012
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
CAROENA, Glaura et al. Rare-earth impurities in gallium nitride: the role of the Hubbard potential. Diamond and Related Materials, v. 27-28, p. 64-67, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.diamond.2012.06.001. Acesso em: 23 jan. 2026. -
APA
Caroena, G., Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2012). Rare-earth impurities in gallium nitride: the role of the Hubbard potential. Diamond and Related Materials, 27-28, 64-67. doi:10.1016/j.diamond.2012.06.001 -
NLM
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Rare-earth impurities in gallium nitride: the role of the Hubbard potential [Internet]. Diamond and Related Materials. 2012 ; 27-28 64-67.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/j.diamond.2012.06.001 -
Vancouver
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Rare-earth impurities in gallium nitride: the role of the Hubbard potential [Internet]. Diamond and Related Materials. 2012 ; 27-28 64-67.[citado 2026 jan. 23 ] Available from: https://doi.org/10.1016/j.diamond.2012.06.001 - Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices
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Informações sobre o DOI: 10.1016/j.diamond.2012.06.001 (Fonte: oaDOI API)
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