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Artigo de periodico
Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots (2025)
Brubach, J. ; Huang, T.-Y. ; Borrely, T ; Greenhill, C ; Walrath, J ; Fedele, G; Yang, Y.-C. ; Zimmerman, A. ; Goldman, R. S.
Source: Applied Physics Letters. Unidade: IF
Subjects: DISPOSITIVOS ELETRÔNICOS, SEMICONDUTORES, POÇOS QUÂNTICOS
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ABNT
BRUBACH, J. et al. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0244331. Acesso em: 04 nov. 2025.
APA
Brubach, J., Huang, T. -Y., Borrely, T., Greenhill, C., Walrath, J., Fedele, G., et al. (2025). Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. doi:https://doi.org/10.1063/5.0244331
NLM
Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331
Vancouver
Brubach J, Huang T-Y, Borrely T, Greenhill C, Walrath J, Fedele G, Yang Y-C, Zimmerman A, Goldman RS. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots [Internet]. Applied Physics Letters. 2025 ;[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/5.0244331
Artigo de periodico
Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films (2018)
Morelhao, Sergio Luiz; Kycia, Stefan; Netzke, Samuel; Fornari, Celso I.; Rappl, Paulo H. O.; Abramof, Eduardo
Source: Applied Physics Letters. Unidade: IF
Subjects: DIFRAÇÃO POR RAIOS X, SEMICONDUTORES, CRISTALOGRAFIA DE RAIOS X
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MORELHAO, Sergio Luiz et al. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Applied Physics Letters, v. 112, n. 12, p. 101903, 2018Tradução . . Disponível em: https://aip.scitation.org/doi/10.1063/1.5020375. Acesso em: 04 nov. 2025.
APA
Morelhao, S. L., Kycia, S., Netzke, S., Fornari, C. I., Rappl, P. H. O., & Abramof, E. (2018). Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films. Applied Physics Letters, 112( 12), 101903. doi:10.1063/1.5020375
NLM
Morelhao SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. Applied Physics Letters. 2018 ; 112( 12): 101903.[citado 2025 nov. 04 ] Available from: https://aip.scitation.org/doi/10.1063/1.5020375
Vancouver
Morelhao SL, Kycia S, Netzke S, Fornari CI, Rappl PHO, Abramof E. Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films [Internet]. Applied Physics Letters. 2018 ; 112( 12): 101903.[citado 2025 nov. 04 ] Available from: https://aip.scitation.org/doi/10.1063/1.5020375
Artigo de periodico
Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene (2014)
Shakouri, Kh.; Vasilopoulos, P.; Vargiamidis, V.; Hai, Guo-Qiang ; Peeters, F. M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SPINTRÔNICA, POÇOS QUÂNTICOS, SEMICONDUTORES
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ABNT
SHAKOURI, Kh. et al. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene. Applied Physics Letters, v. 104, n. 21, p. 213109-1-213109-4, 2014Tradução . . Disponível em: https://doi.org/10.1063/1.4878509. Acesso em: 04 nov. 2025.
APA
Shakouri, K., Vasilopoulos, P., Vargiamidis, V., Hai, G. -Q., & Peeters, F. M. (2014). Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene. Applied Physics Letters, 104( 21), 213109-1-213109-4. doi:10.1063/1.4878509
NLM
Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene [Internet]. Applied Physics Letters. 2014 ; 104( 21): 213109-1-213109-4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4878509
Vancouver
Shakouri K, Vasilopoulos P, Vargiamidis V, Hai G-Q, Peeters FM. Spin- and valley-dependent commensurability oscillations and electric-field-induced quantum Hall plateaux in periodically modulated silicene [Internet]. Applied Physics Letters. 2014 ; 104( 21): 213109-1-213109-4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4878509
Artigo de periodico
Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices (2013)
Caroena, G; Machado, Wanda Valle Marcondes; Assali, Lucy Vitoria Credidio ; Justo Filho, João Francisco
Source: Applied Physics Letters. Unidades: EP, IF
Subjects: SEMICONDUTORES, SPINTRÔNICA
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ABNT
CAROENA, G et al. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices. Applied Physics Letters, v. 102, n. 6, p. 062101, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4791787. Acesso em: 04 nov. 2025.
APA
Caroena, G., Machado, W. V. M., Assali, L. V. C., & Justo Filho, J. F. (2013). Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices. Applied Physics Letters, 102( 6), 062101. doi:10.1063/1.4791787
NLM
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices [Internet]. Applied Physics Letters. 2013 ; 102( 6): 062101.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4791787
Vancouver
Caroena G, Machado WVM, Assali LVC, Justo Filho JF. Lanthanide impurities in wide bandgap semiconductors: a possible roadmap for spintronic devices [Internet]. Applied Physics Letters. 2013 ; 102( 6): 062101.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4791787
Artigo de periodico
Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires (2013)
Guimarães, Francisco Eduardo Gontijo ; Caface, R. A.; Arakaki, Haroldo; Souza, Carlos Alberto de; Pusep, Yuri A
Source: Applied Physics Letters. Unidade: IFSC
Subjects: NANOTECNOLOGIA, SEMICONDUTORES
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ABNT
GUIMARÃES, Francisco Eduardo Gontijo et al. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, v. 103, n. 3, p. 033121-1-033121-3, 2013Tradução . . Disponível em: https://doi.org/10.1063/1.4816288. Acesso em: 04 nov. 2025.
APA
Guimarães, F. E. G., Caface, R. A., Arakaki, H., Souza, C. A. de, & Pusep, Y. A. (2013). Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires. Applied Physics Letters, 103( 3), 033121-1-033121-3. doi:10.1063/1.4816288
NLM
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4816288
Vancouver
Guimarães FEG, Caface RA, Arakaki H, Souza CA de, Pusep YA. Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires [Internet]. Applied Physics Letters. 2013 ; 103( 3): 033121-1-033121-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4816288
Artigo de periodico
Digital magnetic heterostructures based on GaN using GGA-1/2 approach (2012)
Santos, J P T; Marques, M; Pelá, R R; Teles, L. K.; Ferreira, Luiz Guimarães
Source: Applied Physics Letters. Unidade: IF
Subjects: MATERIAIS MAGNÉTICOS, FERROMAGNETISMO, SEMICONDUTORES, FILMES FINOS, NÍQUEL
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ABNT
SANTOS, J P T et al. Digital magnetic heterostructures based on GaN using GGA-1/2 approach. Applied Physics Letters, v. 101, n. 11, p. 112403, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4751285. Acesso em: 04 nov. 2025.
APA
Santos, J. P. T., Marques, M., Pelá, R. R., Teles, L. K., & Ferreira, L. G. (2012). Digital magnetic heterostructures based on GaN using GGA-1/2 approach. Applied Physics Letters, 101( 11), 112403. doi:10.1063/1.4751285
NLM
Santos JPT, Marques M, Pelá RR, Teles LK, Ferreira LG. Digital magnetic heterostructures based on GaN using GGA-1/2 approach [Internet]. Applied Physics Letters. 2012 ;101( 11): 112403.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4751285
Vancouver
Santos JPT, Marques M, Pelá RR, Teles LK, Ferreira LG. Digital magnetic heterostructures based on GaN using GGA-1/2 approach [Internet]. Applied Physics Letters. 2012 ;101( 11): 112403.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4751285
Artigo de periodico
GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations (2012)
Pela, R R; Marques, M; Ferreira, Luiz Guimarães; Furthmüller, Jurgen; Teles, L. K.
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, SEMICONDUTORES (PROPRIEDADES MAGNÉTICAS)
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ABNT
PELA, R R et al. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, v. 100, n. 20, p. 202408/1-202408/4, 2012Tradução . . Disponível em: https://doi.org/10.1063/1.4718602. Acesso em: 04 nov. 2025.
APA
Pela, R. R., Marques, M., Ferreira, L. G., Furthmüller, J., & Teles, L. K. (2012). GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations. Applied Physics Letters, 100( 20), 202408/1-202408/4. doi:10.1063/1.4718602
NLM
Pela RR, Marques M, Ferreira LG, Furthmüller J, Teles LK. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations [Internet]. Applied Physics Letters. 2012 ; 100( 20): 202408/1-202408/4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4718602
Vancouver
Pela RR, Marques M, Ferreira LG, Furthmüller J, Teles LK. GaMnAs: position of Mn-d levels and majority spin band gap predicted from GGA-1/2 calculations [Internet]. Applied Physics Letters. 2012 ; 100( 20): 202408/1-202408/4.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.4718602
Artigo de periodico
A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential (2010)
Pusep, Yuri A ; Mohseni, P. K.; LaPierre, R. R.; Bakarov, A. K.; Toropov, A. I.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS, ELÉTRONS (ESTUDO)
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PUSEP, Yuri A et al. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, v. 96, n. 11, p. 113106-1-113106-3, 2010Tradução . . Disponível em: https://doi.org/10.1063/1.3364138. Acesso em: 04 nov. 2025.
APA
Pusep, Y. A., Mohseni, P. K., LaPierre, R. R., Bakarov, A. K., & Toropov, A. I. (2010). A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential. Applied Physics Letters, 96( 11), 113106-1-113106-3. doi:10.1063/1.3364138
NLM
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
Vancouver
Pusep YA, Mohseni PK, LaPierre RR, Bakarov AK, Toropov AI. A study of disorder effects in random (AlxGa1-xAs)(n)(AlyGa1-yAs)(m) superlattices embedded in a wide parabolic potential [Internet]. Applied Physics Letters. 2010 ; 96( 11): 113106-1-113106-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3364138
Artigo de periodico
Anomalous lattice parameter of magnetic semiconductor alloys (2009)
Caetano, Clovis; Marques, Marcelo; Ferreira, Luiz Guimarães; Teles, L. K.
Source: Applied Physics Letters. Unidade: IF
Assunto: SEMICONDUTORES
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CAETANO, Clovis et al. Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, v. 94, n. 24, p. 241914/1-241914/3. 2009, 2009Tradução . . Disponível em: https://doi.org/10.1063/1.3154560. Acesso em: 04 nov. 2025.
APA
Caetano, C., Marques, M., Ferreira, L. G., & Teles, L. K. (2009). Anomalous lattice parameter of magnetic semiconductor alloys. Applied Physics Letters, 94( 24), 241914/1-241914/3. 2009. doi:10.1063/1.3154560
NLM
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3154560
Vancouver
Caetano C, Marques M, Ferreira LG, Teles LK. Anomalous lattice parameter of magnetic semiconductor alloys [Internet]. Applied Physics Letters. 2009 ; 94( 24): 241914/1-241914/3. 2009.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3154560
Artigo de periodico
Interface roughness in short-period InGaAs/InP superlattices (2008)
Pusep, Yuri A ; Gozzo, G. C.; La Pierre, R. R.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, FÍSICA DA MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA, MAGNETISMO
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PUSEP, Yuri A e GOZZO, G. C. e LA PIERRE, R. R. Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, v. 93, n. 24, p. 242104-1-242104-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.3050531. Acesso em: 04 nov. 2025.
APA
Pusep, Y. A., Gozzo, G. C., & La Pierre, R. R. (2008). Interface roughness in short-period InGaAs/InP superlattices. Applied Physics Letters, 93( 24), 242104-1-242104-3. doi:10.1063/1.3050531
NLM
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3050531
Vancouver
Pusep YA, Gozzo GC, La Pierre RR. Interface roughness in short-period InGaAs/InP superlattices [Internet]. Applied Physics Letters. 2008 ; 93( 24): 242104-1-242104-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.3050531
Artigo de periodico
Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells (2008)
Li, Jun; Chang, Kai; Hai, Guo-Qiang ; Chan, K. S.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: ÁTOMOS (ESTRUTURA), SEMICONDUTORES, MECÂNICA QUÂNTICA, SPIN, HIBRIDIZAÇÃO
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LI, Jun et al. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells. Applied Physics Letters, v. 92, n. 15, p. 152107-1-152107-3, 2008Tradução . . Disponível em: https://doi.org/10.1063/1.2909544. Acesso em: 04 nov. 2025.
APA
Li, J., Chang, K., Hai, G. -Q., & Chan, K. S. (2008). Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells. Applied Physics Letters, 92( 15), 152107-1-152107-3. doi:10.1063/1.2909544
NLM
Li J, Chang K, Hai G-Q, Chan KS. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells [Internet]. Applied Physics Letters. 2008 ; 92( 15): 152107-1-152107-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2909544
Vancouver
Li J, Chang K, Hai G-Q, Chan KS. Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells [Internet]. Applied Physics Letters. 2008 ; 92( 15): 152107-1-152107-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2909544
Artigo de periodico
Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures (2007)
Oliveira, E. J. F.; Lima, A. T. da Cunha; Boselli, Marco Aurelio; Sipahi, Guilherme Matos ; Rodrigues, S. C. P.; Lima, I. C. da Cunha
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN
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OLIVEIRA, E. J. F. et al. Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures. Applied Physics Letters, v. 90, n. 11, p. 112102-1-112102-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2712809. Acesso em: 04 nov. 2025.
APA
Oliveira, E. J. F., Lima, A. T. da C., Boselli, M. A., Sipahi, G. M., Rodrigues, S. C. P., & Lima, I. C. da C. (2007). Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures. Applied Physics Letters, 90( 11), 112102-1-112102-3. doi:10.1063/1.2712809
NLM
Oliveira EJF, Lima AT da C, Boselli MA, Sipahi GM, Rodrigues SCP, Lima IC da C. Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures [Internet]. Applied Physics Letters. 2007 ; 90( 11): 112102-1-112102-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2712809
Vancouver
Oliveira EJF, Lima AT da C, Boselli MA, Sipahi GM, Rodrigues SCP, Lima IC da C. Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures [Internet]. Applied Physics Letters. 2007 ; 90( 11): 112102-1-112102-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2712809
Artigo de periodico
Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings (2007)
Hanke, Michael; Mazur, Yu I.; Marega Junior, Euclydes ; AbuWaar, Z. Y.; Salamo, G. J.; Schäfer, P.; Schmidbauer, M.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, ÓPTICA, MODELOS (TRANSFORMAÇÃO), DIFRAÇÃO POR RAIOS X, MAGNETISMO
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HANKE, Michael et al. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, v. 91, p. 043103-1-043103-3, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2760191. Acesso em: 04 nov. 2025.
APA
Hanke, M., Mazur, Y. I., Marega Junior, E., AbuWaar, Z. Y., Salamo, G. J., Schäfer, P., & Schmidbauer, M. (2007). Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings. Applied Physics Letters, 91, 043103-1-043103-3. doi:10.1063/1.2760191
NLM
Hanke M, Mazur YI, Marega Junior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2760191
Vancouver
Hanke M, Mazur YI, Marega Junior E, AbuWaar ZY, Salamo GJ, Schäfer P, Schmidbauer M. Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings [Internet]. Applied Physics Letters. 2007 ; 91 043103-1-043103-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2760191
Artigo de periodico
Irradiation induced pulsations of reverse biased metal oxide/silicon structures (2007)
Finka, D.; Kiv, A.; Fuks, D.; Tabacniks, Manfredo ; Rizzutto, Marcia ; Silva, A. De O. D.; Chandra, A.; Golovanov, V.; Ivanovskaya, M.; Khirunenko, L.
Source: Applied Physics Letters. Unidade: IF
Subjects: FÍSICA NUCLEAR, SILÍCIO, COLISÕES DE ÍONS PESADOS RELATIVÍSTICOS, RESISTÊNCIA FÍSICA, DISPOSITIVOS ELETRÔNICOS, FÍSICA, SEMICONDUTORES, TRANSISTORES
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FINKA, D. et al. Irradiation induced pulsations of reverse biased metal oxide/silicon structures. Applied Physics Letters, v. 91, n. 8, 2007Tradução . . Disponível em: https://doi.org/10.1063/1.2773950. Acesso em: 04 nov. 2025.
APA
Finka, D., Kiv, A., Fuks, D., Tabacniks, M., Rizzutto, M., Silva, A. D. O. D., et al. (2007). Irradiation induced pulsations of reverse biased metal oxide/silicon structures. Applied Physics Letters, 91( 8). doi:10.1063/1.2773950
NLM
Finka D, Kiv A, Fuks D, Tabacniks M, Rizzutto M, Silva ADOD, Chandra A, Golovanov V, Ivanovskaya M, Khirunenko L. Irradiation induced pulsations of reverse biased metal oxide/silicon structures [Internet]. Applied Physics Letters. 2007 ; 91( 8):[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2773950
Vancouver
Finka D, Kiv A, Fuks D, Tabacniks M, Rizzutto M, Silva ADOD, Chandra A, Golovanov V, Ivanovskaya M, Khirunenko L. Irradiation induced pulsations of reverse biased metal oxide/silicon structures [Internet]. Applied Physics Letters. 2007 ; 91( 8):[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2773950
Artigo de periodico
Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O (2006)
Marin, I. S. P.; Sipahi, Guilherme Matos ; Boseli, M. A.; Lima, I. C. da Cunha
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, SPIN, TEMPERATURA, FERROMAGNETISMO, DENSIDADE, POLARIZAÇÃO
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MARIN, I. S. P. et al. Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O. Applied Physics Letters, v. No 2006, n. 19, p. 192101-1-192101-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2370751. Acesso em: 04 nov. 2025.
APA
Marin, I. S. P., Sipahi, G. M., Boseli, M. A., & Lima, I. C. da C. (2006). Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O. Applied Physics Letters, No 2006( 19), 192101-1-192101-3. doi:10.1063/1.2370751
NLM
Marin ISP, Sipahi GM, Boseli MA, Lima IC da C. Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O [Internet]. Applied Physics Letters. 2006 ; No 2006( 19): 192101-1-192101-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2370751
Vancouver
Marin ISP, Sipahi GM, Boseli MA, Lima IC da C. Search for fully spin-polarized semiconductor heterostructures: the candidate (Zn,Co)O [Internet]. Applied Physics Letters. 2006 ; No 2006( 19): 192101-1-192101-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2370751
Artigo de periodico
Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN (2006)
Marques, M; Scolfaro, Luisa Maria Ribeiro; Teles, L. K.; Furthmüller, Jurgen; Bechstedt, F; Ferreira, L G
Source: Applied Physics Letters. Unidade: IF
Subjects: MATÉRIA CONDENSADA, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARQUES, M et al. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, v. 88, n. 2, p. 022507-1/022507-3, 2006Tradução . . Disponível em: https://doi.org/10.1063/1.2162802. Acesso em: 04 nov. 2025.
APA
Marques, M., Scolfaro, L. M. R., Teles, L. K., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2006). Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN. Applied Physics Letters, 88( 2), 022507-1/022507-3. doi:10.1063/1.2162802
NLM
Marques M, Scolfaro LMR, Teles LK, Furthmüller J, Bechstedt F, Ferreira LG. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN [Internet]. Applied Physics Letters. 2006 ; 88( 2): 022507-1/022507-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2162802
Vancouver
Marques M, Scolfaro LMR, Teles LK, Furthmüller J, Bechstedt F, Ferreira LG. Theoretical prediction of ferromagnetic MnN layers embedded in wurtzite GaN [Internet]. Applied Physics Letters. 2006 ; 88( 2): 022507-1/022507-3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.2162802
Artigo de periodico-carta/editorial
Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)] (2006)
Hai, Guo-Qiang ; Oliveira, S. S.
Source: Applied Physics Letters. Unidade: IFSC
Subjects: FÍSICA, SEMICONDUTORES, CAMPO MAGNÉTICO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
HAI, Guo-Qiang e OLIVEIRA, S. S. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. Melville: Instituto de Física de São Carlos, Universidade de São Paulo. . Acesso em: 04 nov. 2025. , 2006
APA
Hai, G. -Q., & Oliveira, S. S. (2006). Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. Melville: Instituto de Física de São Carlos, Universidade de São Paulo.
NLM
Hai G-Q, Oliveira SS. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. 2006 ; 88( 19): 196101-1-196101-2.[citado 2025 nov. 04 ]
Vancouver
Hai G-Q, Oliveira SS. Comment on "Field-controlled suppression of phonon-induced transitions in coupled quantum dots" [Appl. Phys. Lett. 85, 4729 (2004)]. Applied Physics Letters. 2006 ; 88( 19): 196101-1-196101-2.[citado 2025 nov. 04 ]
Artigo de periodico
Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films (2005)
Marletta, Alexandre; Miwa, R. H.; Cazati, T.; Guimarães, Francisco Eduardo Gontijo ; Faria, Roberto Mendonça ; Alves, Marcos Veríssimo
Source: Applied Physics Letters. Unidade: IFSC
Subjects: SEMICONDUTORES, POLÍMEROS (MATERIAIS)
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARLETTA, Alexandre et al. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films. Applied Physics Letters, v. 86, n. 14, p. 141907-1-141907-2, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1897847. Acesso em: 04 nov. 2025.
APA
Marletta, A., Miwa, R. H., Cazati, T., Guimarães, F. E. G., Faria, R. M., & Alves, M. V. (2005). Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films. Applied Physics Letters, 86( 14), 141907-1-141907-2. doi:10.1063/1.1897847
NLM
Marletta A, Miwa RH, Cazati T, Guimarães FEG, Faria RM, Alves MV. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2005 ; 86( 14): 141907-1-141907-2.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1897847
Vancouver
Marletta A, Miwa RH, Cazati T, Guimarães FEG, Faria RM, Alves MV. Anomalous gap dependence of stretched Teflon/poly(p-phenylene vinylene) films [Internet]. Applied Physics Letters. 2005 ; 86( 14): 141907-1-141907-2.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1897847
Artigo de periodico
Magnetic properties of MnN: influence of strain and crystal structure (2005)
Marques, M; Teles, L. K.; Scolfaro, Luisa Maria Ribeiro; Furthmüller, J; Bechstedt, F; Ferreira, L G
Source: Applied Physics Letters. Unidade: IF
Subjects: SEMICONDUTORES, ESTRUTURA ELETRÔNICA, MAGNETISMO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
MARQUES, M et al. Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, v. 86, n. 16, p. 164105/1-164105/3, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1905787. Acesso em: 04 nov. 2025.
APA
Marques, M., Teles, L. K., Scolfaro, L. M. R., Furthmüller, J., Bechstedt, F., & Ferreira, L. G. (2005). Magnetic properties of MnN: influence of strain and crystal structure. Applied Physics Letters, 86( 16), 164105/1-164105/3. doi:10.1063/1.1905787
NLM
Marques M, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F, Ferreira LG. Magnetic properties of MnN: influence of strain and crystal structure [Internet]. Applied Physics Letters. 2005 ; 86( 16): 164105/1-164105/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1905787
Vancouver
Marques M, Teles LK, Scolfaro LMR, Furthmüller J, Bechstedt F, Ferreira LG. Magnetic properties of MnN: influence of strain and crystal structure [Internet]. Applied Physics Letters. 2005 ; 86( 16): 164105/1-164105/3.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1905787
Artigo de periodico
Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers (2004)
Sipahi, Guilherme Matos ; Rodrigues, S. C. P.; Scolfaro, Luisa Maria Ribeiro; Lima, I. C. da Cunha
Source: Applied Physics Letters. Unidades: IFSC, IF
Subjects: SEMICONDUTORES, FERROMAGNETISMO, ESTRUTURA ELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIPAHI, Guilherme Matos et al. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers. Applied Physics Letters, v. 85, n. 25, p. 6209-6211, 2004Tradução . . Disponível em: https://doi.org/10.1063/1.1840121. Acesso em: 04 nov. 2025.
APA
Sipahi, G. M., Rodrigues, S. C. P., Scolfaro, L. M. R., & Lima, I. C. da C. (2004). Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers. Applied Physics Letters, 85( 25), 6209-6211. doi:10.1063/1.1840121
NLM
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6209-6211.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1840121
Vancouver
Sipahi GM, Rodrigues SCP, Scolfaro LMR, Lima IC da C. Charge and spin distribution in ferromagnetic Mn-doped InGaAs/GaAs multilayers [Internet]. Applied Physics Letters. 2004 ; 85( 25): 6209-6211.[citado 2025 nov. 04 ] Available from: https://doi.org/10.1063/1.1840121

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