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  • Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES

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      SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 11 nov. 2024.
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      Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
    • NLM

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/5.0187962
    • Vancouver

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/5.0187962
  • Source: Physical Review B. Unidades: IFSC, IF

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri A et al. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, v. 109, n. 7, p. 075429-1-075429-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.075429. Acesso em: 11 nov. 2024.
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      Pusep, Y. A., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., & Bakarov, A. (2024). Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, 109( 7), 075429-1-075429-6. doi:10.1103/PhysRevB.109.075429
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      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429
    • Vancouver

      Pusep YA, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: POLÍMEROS (MATERIAIS), SEMICONDUTORES, ÓPTICA, CÁLCULO DE PROBABILIDADE

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      VALENTE, Gustavo Targino e GUIMARÃES, Francisco Eduardo Gontijo. Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, v. 136, n. 8, p. 084501-1-084501-8, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0218020. Acesso em: 11 nov. 2024.
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      Valente, G. T., & Guimarães, F. E. G. (2024). Probabilistic modeling of energy transfer in disordered organic semiconductors. Journal of Applied Physics, 136( 8), 084501-1-084501-8. doi:10.1063/5.0218020
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      Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/5.0218020
    • Vancouver

      Valente GT, Guimarães FEG. Probabilistic modeling of energy transfer in disordered organic semiconductors [Internet]. Journal of Applied Physics. 2024 ; 136( 8): 084501-1-084501-8.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/5.0218020
  • Source: Physical Review B. Unidades: IF, IFSC

    Subjects: FOTOLUMINESCÊNCIA, CAMPO ELETROMAGNÉTICO, SEMICONDUTORES

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      PATRICIO, Marco Antonio Tito et al. Magnetic field breakdown of electron hydrodynamics. Physical Review B, v. 110, n. 4, p. 45411-1-45411-5, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.110.045411. Acesso em: 11 nov. 2024.
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      Patricio, M. A. T., Jacobsen, G. M., Oliveira, V. A. de, Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Magnetic field breakdown of electron hydrodynamics. Physical Review B, 110( 4), 45411-1-45411-5. doi:10.1103/PhysRevB.110.045411
    • NLM

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411
    • Vancouver

      Patricio MAT, Jacobsen GM, Oliveira VA de, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Magnetic field breakdown of electron hydrodynamics [Internet]. Physical Review B. 2024 ; 110( 4): 45411-1-45411-5.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.110.045411
  • Source: Physical Review B. Unidades: IF, IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO

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      PATRICIO, Marco Antonio Tito et al. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, v. 109, n. 12, p. L121401-1-L121401-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.L121401. Acesso em: 11 nov. 2024.
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      Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. A. (2024). Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, 109( 12), L121401-1-L121401-6. doi:10.1103/PhysRevB.109.L121401
    • NLM

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401
    • Vancouver

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep YA. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401
  • Source: Journal of Applied Polymer Science. Unidade: IFSC

    Subjects: POLÍMEROS (MATERIAIS), SEMICONDUTORES, ÓPTICA ELETRÔNICA (PROPRIEDADES)

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      PEREIRA, Myllena Souza et al. Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties. Journal of Applied Polymer Science, v. 140, n. 39, p. e54448-1-e54448-11, 2023Tradução . . Disponível em: https://doi.org/10.1002/app.54448. Acesso em: 11 nov. 2024.
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      Pereira, M. S., Araújo, L. O. de, Daros, M., Torres, B. B. M., Coutinho, D. J., Macedo, A. G., et al. (2023). Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties. Journal of Applied Polymer Science, 140( 39), e54448-1-e54448-11. doi:10.1002/app.54448
    • NLM

      Pereira MS, Araújo LO de, Daros M, Torres BBM, Coutinho DJ, Macedo AG, Faria RM, Rodrigues PC. Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties [Internet]. Journal of Applied Polymer Science. 2023 ; 140( 39): e54448-1-e54448-11.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1002/app.54448
    • Vancouver

      Pereira MS, Araújo LO de, Daros M, Torres BBM, Coutinho DJ, Macedo AG, Faria RM, Rodrigues PC. Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties [Internet]. Journal of Applied Polymer Science. 2023 ; 140( 39): e54448-1-e54448-11.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1002/app.54448
  • Source: Program. Conference titles: Materials Research Society Fall Meeting and Exhibit. Unidade: IFSC

    Subjects: FOTOCATÁLISE, NIÓBIO, SEMICONDUTORES, NANOPARTÍCULAS

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      NOGUEIRA, Francisco Guilherme Esteves et al. Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion. 2023, Anais.. Warrendale: Materials Research Society - MRS, 2023. Disponível em: https://repositorio.usp.br/directbitstream/3456f4bc-5695-4a12-a1a7-4a570c23332b/3179260.pdf. Acesso em: 11 nov. 2024.
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      Nogueira, F. G. E., Faria, A. L. A., Torres, J. A., Ribeiro, L. S., Centurion, H. A., Ribeiro, C., & Gonçalves, R. V. (2023). Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion. In Program. Warrendale: Materials Research Society - MRS. Recuperado de https://repositorio.usp.br/directbitstream/3456f4bc-5695-4a12-a1a7-4a570c23332b/3179260.pdf
    • NLM

      Nogueira FGE, Faria ALA, Torres JA, Ribeiro LS, Centurion HA, Ribeiro C, Gonçalves RV. Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion [Internet]. Program. 2023 ;[citado 2024 nov. 11 ] Available from: https://repositorio.usp.br/directbitstream/3456f4bc-5695-4a12-a1a7-4a570c23332b/3179260.pdf
    • Vancouver

      Nogueira FGE, Faria ALA, Torres JA, Ribeiro LS, Centurion HA, Ribeiro C, Gonçalves RV. Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion [Internet]. Program. 2023 ;[citado 2024 nov. 11 ] Available from: https://repositorio.usp.br/directbitstream/3456f4bc-5695-4a12-a1a7-4a570c23332b/3179260.pdf
  • Source: Proceedings. Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro. Unidade: EESC

    Subjects: FILMES FINOS, SEMICONDUTORES, ENGENHARIA MECÂNICA

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      SOUZA, Adelcio Marques de e CELINO, Daniel Ricardo e ROMERO, Murilo Araujo. Compact modeling of transition metal dichalcogenide ballistic transistors. 2023, Anais.. Piscataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2023. Disponível em: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479. Acesso em: 11 nov. 2024.
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      Souza, A. M. de, Celino, D. R., & Romero, M. A. (2023). Compact modeling of transition metal dichalcogenide ballistic transistors. In Proceedings. Piscataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1109/SBMicro60499.2023.10302479
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      Souza AM de, Celino DR, Romero MA. Compact modeling of transition metal dichalcogenide ballistic transistors [Internet]. Proceedings. 2023 ;[citado 2024 nov. 11 ] Available from: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479
    • Vancouver

      Souza AM de, Celino DR, Romero MA. Compact modeling of transition metal dichalcogenide ballistic transistors [Internet]. Proceedings. 2023 ;[citado 2024 nov. 11 ] Available from: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479
  • Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: LASER, NANOPARTÍCULAS, SEMICONDUTORES, FILMES FINOS, ÓPTICA ELETRÔNICA

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      PAULA, Kelly Tasso de et al. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, v. 133, n. 5, p. 053103-1-053103-10, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0137926. Acesso em: 11 nov. 2024.
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      Paula, K. T. de, Santos, S. N. C. dos, Facure, M. H. M., Araújo, F. L. de, Andrade, M. B. de, Corrêa, D. S., & Mendonça, C. R. (2023). Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, 133( 5), 053103-1-053103-10. doi:10.1063/5.0137926
    • NLM

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/5.0137926
    • Vancouver

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1063/5.0137926
  • Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP

    Subjects: TRANSISTORES, SEMICONDUTORES

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      PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 11 nov. 2024.
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      Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604
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      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
    • Vancouver

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604
  • Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: EP

    Subjects: TRANSISTORES, SEMICONDUTORES

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      CANALES, Bruno Godoy e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302593. Acesso em: 11 nov. 2024.
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      Canales, B. G., Martino, J. A., & Agopian, P. G. D. (2023). Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302593
    • NLM

      Canales BG, Martino JA, Agopian PGD. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms [Internet]. SBMicro. 2023 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302593
    • Vancouver

      Canales BG, Martino JA, Agopian PGD. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms [Internet]. SBMicro. 2023 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302593
  • Source: Physical Review Letters. Unidade: IF

    Assunto: SEMICONDUTORES

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      OLSHANETSKY, E. B. et al. Multifractal conductance fluctuations of helical edge states. Physical Review Letters, v. 131, n. 7, p. 076301, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevLett.131.076301. Acesso em: 11 nov. 2024.
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      Olshanetsky, E. B., Gusev, G., Levine, A., Kvon, Z. D., & Armand, J. P. (2023). Multifractal conductance fluctuations of helical edge states. Physical Review Letters, 131( 7), 076301. doi:10.1103/PhysRevLett.131.076301
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      Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301
    • Vancouver

      Olshanetsky EB, Gusev G, Levine A, Kvon ZD, Armand JP. Multifractal conductance fluctuations of helical edge states [Internet]. Physical Review Letters. 2023 ; 131( 7): 076301.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevLett.131.076301
  • Source: Abstracts. Conference titles: Atomic, Molecular, & Optical Events. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, ÓPTICA QUÂNTICA, SEMICONDUTORES

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      MAREGA JUNIOR, Euclydes. Controlling the optical properties of matter by using metasurfaces. 2023, Anais.. College Station: Texas A&M University, 2023. Disponível em: https://physics.tamu.edu/events/controlling-the-optical-properties-of-matter-by-using-metasurfaces/. Acesso em: 11 nov. 2024.
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      Marega Junior, E. (2023). Controlling the optical properties of matter by using metasurfaces. In Abstracts. College Station: Texas A&M University. Recuperado de https://physics.tamu.edu/events/controlling-the-optical-properties-of-matter-by-using-metasurfaces/
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      Marega Junior E. Controlling the optical properties of matter by using metasurfaces [Internet]. Abstracts. 2023 ;[citado 2024 nov. 11 ] Available from: https://physics.tamu.edu/events/controlling-the-optical-properties-of-matter-by-using-metasurfaces/
    • Vancouver

      Marega Junior E. Controlling the optical properties of matter by using metasurfaces [Internet]. Abstracts. 2023 ;[citado 2024 nov. 11 ] Available from: https://physics.tamu.edu/events/controlling-the-optical-properties-of-matter-by-using-metasurfaces/
  • Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF

    Subjects: TOMOGRAFIA, SEMICONDUTORES

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      SANTOS, Thales Borrely dos et al. On the importance of atom probe tomography for the development of new nanoscale devices. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881039. Acesso em: 11 nov. 2024.
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      Santos, T. B. dos, Huang, T. -Y., Yang, Y. -C., Goldman, R. S., & Quivy, A. A. (2022). On the importance of atom probe tomography for the development of new nanoscale devices. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881039
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      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039
    • Vancouver

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039
  • Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro. Unidade: EESC

    Subjects: FILMES FINOS, SEMICONDUTORES, ENGENHARIA MECÂNICA

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      PINTO, H. M. e JASINEVICIUS, Renato Goulart e CIRINO, G. A. A method for deposition rate estimation on a low-cost home-built DC sputter system. 2022, Anais.. Piscataway, NJ, USA: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881038. Acesso em: 11 nov. 2024.
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      Pinto, H. M., Jasinevicius, R. G., & Cirino, G. A. (2022). A method for deposition rate estimation on a low-cost home-built DC sputter system. In . Piscataway, NJ, USA: IEEE. doi:10.1109/SBMICRO55822.2022.9881038
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      Pinto HM, Jasinevicius RG, Cirino GA. A method for deposition rate estimation on a low-cost home-built DC sputter system [Internet]. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881038
    • Vancouver

      Pinto HM, Jasinevicius RG, Cirino GA. A method for deposition rate estimation on a low-cost home-built DC sputter system [Internet]. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881038
  • Source: Bulletin of the American Physical Society. Conference titles: APS March Meeting. Unidade: IFSC

    Subjects: SUPERCONDUTIVIDADE, SEMICONDUTORES

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      PUPIM, Lucas e GILBERT, Matthew J. e EGUES, José Carlos. Higher-order topological phases in point-group symmetric superconductors. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Disponível em: https://meetings/Meeting/MAR22/Session/T10.13. Acesso em: 11 nov. 2024. , 2022
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      Pupim, L., Gilbert, M. J., & Egues, J. C. (2022). Higher-order topological phases in point-group symmetric superconductors. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Recuperado de https://meetings/Meeting/MAR22/Session/T10.13
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      Pupim L, Gilbert MJ, Egues JC. Higher-order topological phases in point-group symmetric superconductors [Internet]. Bulletin of the American Physical Society. 2022 ; 67( 3):[citado 2024 nov. 11 ] Available from: https://meetings/Meeting/MAR22/Session/T10.13
    • Vancouver

      Pupim L, Gilbert MJ, Egues JC. Higher-order topological phases in point-group symmetric superconductors [Internet]. Bulletin of the American Physical Society. 2022 ; 67( 3):[citado 2024 nov. 11 ] Available from: https://meetings/Meeting/MAR22/Session/T10.13
  • Source: SBMICRO: proceedings. Conference titles: Symposium on Microelectronics Technology. Unidade: EP

    Subjects: SEMICONDUTORES, ESTABILIDADE, CIRCUITOS ANALÓGICOS

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    • ABNT

      SILVA, Wenita de Lima e AGOPIAN, Paula Ghedini Der e MARTINO, João Antonio. Experimental behavior of line-TFET applied to low-dropout voltage regulator. 2022, Anais.. [s.L.]: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881041. Acesso em: 11 nov. 2024.
    • APA

      Silva, W. de L., Agopian, P. G. D., & Martino, J. A. (2022). Experimental behavior of line-TFET applied to low-dropout voltage regulator. In SBMICRO: proceedings. [s.L.]: IEEE. doi:10.1109/SBMICRO55822.2022.9881041
    • NLM

      Silva W de L, Agopian PGD, Martino JA. Experimental behavior of line-TFET applied to low-dropout voltage regulator [Internet]. SBMICRO: proceedings. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881041
    • Vancouver

      Silva W de L, Agopian PGD, Martino JA. Experimental behavior of line-TFET applied to low-dropout voltage regulator [Internet]. SBMICRO: proceedings. 2022 ;[citado 2024 nov. 11 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881041
  • Source: Macromolecules. Unidade: IFSC

    Subjects: SEMICONDUTORES, NANOELETRÔNICA, CONDUTIVIDADE ELÉTRICA, POLÍMEROS (MATERIAIS), FILMES FINOS

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      STEGERER, Dominik et al. Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state. Macromolecules, v. 55, n. 12, p. 4979-4994 + supporting information: 1-36, 2022Tradução . . Disponível em: https://doi.org/10.1021/acs.macromol.2c00655. Acesso em: 11 nov. 2024.
    • APA

      Stegerer, D., Pracht, M., Günther, F. S., Sun, H., Preis, K., Zerson, M., et al. (2022). Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state. Macromolecules, 55( 12), 4979-4994 + supporting information: 1-36. doi:10.1021/acs.macromol.2c00655
    • NLM

      Stegerer D, Pracht M, Günther FS, Sun H, Preis K, Zerson M, Maftuhin W, Tan WL, Kroon R, McNeill CR, Fabiano S, Walter M, Biskup T, Gemming S, Magerle R, Müller C, Sommer M. Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state [Internet]. Macromolecules. 2022 ; 55( 12): 4979-4994 + supporting information: 1-36.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1021/acs.macromol.2c00655
    • Vancouver

      Stegerer D, Pracht M, Günther FS, Sun H, Preis K, Zerson M, Maftuhin W, Tan WL, Kroon R, McNeill CR, Fabiano S, Walter M, Biskup T, Gemming S, Magerle R, Müller C, Sommer M. Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state [Internet]. Macromolecules. 2022 ; 55( 12): 4979-4994 + supporting information: 1-36.[citado 2024 nov. 11 ] Available from: https://doi.org/10.1021/acs.macromol.2c00655
  • Source: Bulletin of the American Physical Society. Conference titles: APS March Meeting. Unidade: IFSC

    Subjects: SEMICONDUTORES, SPIN, FÍSICA DA MATÉRIA CONDENSADA

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      DOURADO, Rodrigo de Abreu e EGUES, José Carlos e PENTEADO, Poliana Heiffig. Fresh look on finite-size effects in Majorana nanowires. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Disponível em: https://meetings/Meeting/MAR22/Session/K65.7. Acesso em: 11 nov. 2024. , 2022
    • APA

      Dourado, R. de A., Egues, J. C., & Penteado, P. H. (2022). Fresh look on finite-size effects in Majorana nanowires. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Recuperado de https://meetings/Meeting/MAR22/Session/K65.7
    • NLM

      Dourado R de A, Egues JC, Penteado PH. Fresh look on finite-size effects in Majorana nanowires [Internet]. Bulletin of the American Physical Society. 2022 ; 67( 3):[citado 2024 nov. 11 ] Available from: https://meetings/Meeting/MAR22/Session/K65.7
    • Vancouver

      Dourado R de A, Egues JC, Penteado PH. Fresh look on finite-size effects in Majorana nanowires [Internet]. Bulletin of the American Physical Society. 2022 ; 67( 3):[citado 2024 nov. 11 ] Available from: https://meetings/Meeting/MAR22/Session/K65.7
  • Source: Physical Review B. Unidade: IF

    Assunto: SEMICONDUTORES

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    • ABNT

      DARRIBA, G N et al. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, v. 105, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.105.195201. Acesso em: 11 nov. 2024.
    • APA

      Darriba, G. N., Muñoz, E. L., Richard, D., Ayala, A. P., Carbonari, A. W., Petrilli, H. M., & Renteria, M. (2022). Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, 105. doi:10.1103/PhysRevB.105.195201
    • NLM

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201
    • Vancouver

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2024 nov. 11 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

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