Compact modeling of transition metal dichalcogenide ballistic transistors (2023)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; SOUZA, ADÉLCIO MARQUES DE - EESC ; CELINO, DANIEL RICARDO - EESC
- Unidade: EESC
- DOI: 10.1109/SBMicro60499.2023.10302479
- Subjects: FILMES FINOS; SEMICONDUTORES; ENGENHARIA MECÂNICA
- Language: Inglês
- Imprenta:
- Publisher place: Piscataway, NJ, USA
- Date published: 2023
- Source:
- Título: Proceedings
- Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SOUZA, Adelcio Marques de e CELINO, Daniel Ricardo e ROMERO, Murilo Araujo. Compact modeling of transition metal dichalcogenide ballistic transistors. 2023, Anais.. Piscataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2023. Disponível em: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479. Acesso em: 13 fev. 2026. -
APA
Souza, A. M. de, Celino, D. R., & Romero, M. A. (2023). Compact modeling of transition metal dichalcogenide ballistic transistors. In Proceedings. Piscataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1109/SBMicro60499.2023.10302479 -
NLM
Souza AM de, Celino DR, Romero MA. Compact modeling of transition metal dichalcogenide ballistic transistors [Internet]. Proceedings. 2023 ;[citado 2026 fev. 13 ] Available from: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479 -
Vancouver
Souza AM de, Celino DR, Romero MA. Compact modeling of transition metal dichalcogenide ballistic transistors [Internet]. Proceedings. 2023 ;[citado 2026 fev. 13 ] Available from: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479 - A physics-based analytical model for ballistic InSe nanotransistors
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Informações sobre o DOI: 10.1109/SBMicro60499.2023.10302479 (Fonte: oaDOI API)
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