Analog radio-over-fiber fronthaul by a WDM-PON employing double RSOA self-seeding and carrier-reuse techniques (2018)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; SOUZA, ADÉLCIO MARQUES DE - EESC ; CELINO, DANIEL RICARDO - EESC
- Unidade: EESC
- DOI: 10.1590/2179-10742018v17i41546
- Subjects: COMUNICAÇÃO ÓPTICA; ENGENHARIA ELÉTRICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: São Caetano do Sul, SP
- Date published: 2018
- Source:
- Título: Journal of Microwaves, Optoelectronics and Eletromagnetic Applications
- ISSN: 2179-1074
- Volume/Número/Paginação/Ano: v. 17, n. 4, p. 552-566, 2018
- Status:
- Artigo publicado em periódico de acesso aberto (Gold Open Access)
- Versão do Documento:
- Versão publicada (Published version)
- Acessar versão aberta:
-
ABNT
SOUZA, Adelcio Marques de et al. Analog radio-over-fiber fronthaul by a WDM-PON employing double RSOA self-seeding and carrier-reuse techniques. Journal of Microwaves, Optoelectronics and Eletromagnetic Applications, v. 17, n. 4, p. 552-566, 2018Tradução . . Disponível em: http://dx.doi.org/10.1590/2179-10742018v17i41546. Acesso em: 04 abr. 2026. -
APA
Souza, A. M. de, Celino, D. R., Duarte, U. R., & Romero, M. A. (2018). Analog radio-over-fiber fronthaul by a WDM-PON employing double RSOA self-seeding and carrier-reuse techniques. Journal of Microwaves, Optoelectronics and Eletromagnetic Applications, 17( 4), 552-566. doi:10.1590/2179-10742018v17i41546 -
NLM
Souza AM de, Celino DR, Duarte UR, Romero MA. Analog radio-over-fiber fronthaul by a WDM-PON employing double RSOA self-seeding and carrier-reuse techniques [Internet]. Journal of Microwaves, Optoelectronics and Eletromagnetic Applications. 2018 ; 17( 4): 552-566.[citado 2026 abr. 04 ] Available from: http://dx.doi.org/10.1590/2179-10742018v17i41546 -
Vancouver
Souza AM de, Celino DR, Duarte UR, Romero MA. Analog radio-over-fiber fronthaul by a WDM-PON employing double RSOA self-seeding and carrier-reuse techniques [Internet]. Journal of Microwaves, Optoelectronics and Eletromagnetic Applications. 2018 ; 17( 4): 552-566.[citado 2026 abr. 04 ] Available from: http://dx.doi.org/10.1590/2179-10742018v17i41546 - A physics-based analytical model for ballistic InSe nanotransistors
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