Current-voltage modeling of transistors based on two-dimensional molybdenum disulfide (2025)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; SOUZA, ADÉLCIO MARQUES DE - EESC ; CELINO, DANIEL RICARDO - EESC
- Unidade: EESC
- DOI: 10.1109/ACCESS.2025.3595055
- Subjects: TRANSISTORES; NANOELETRÔNICA; DISPOSITIVOS ELETRÔNICOS; ENGENHARIA ELÉTRICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: Piscataway, NJ, USA
- Date published: 2025
- Source:
- Título: IEEE Access
- ISSN: 2169-3536
- Volume/Número/Paginação/Ano: v. 13, p. 138112-138124, 2025
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SOUZA, Adelcio Marques de et al. Current-voltage modeling of transistors based on two-dimensional molybdenum disulfide. IEEE Access, v. 13, p. 138112-138124, 2025Tradução . . Disponível em: http://dx.doi.org/10.1109/ACCESS.2025.3595055. Acesso em: 13 fev. 2026. -
APA
Souza, A. M. de, Celino, D. R., Ragi, R., & Romero, M. A. (2025). Current-voltage modeling of transistors based on two-dimensional molybdenum disulfide. IEEE Access, 13, 138112-138124. doi:10.1109/ACCESS.2025.3595055 -
NLM
Souza AM de, Celino DR, Ragi R, Romero MA. Current-voltage modeling of transistors based on two-dimensional molybdenum disulfide [Internet]. IEEE Access. 2025 ; 13 138112-138124.[citado 2026 fev. 13 ] Available from: http://dx.doi.org/10.1109/ACCESS.2025.3595055 -
Vancouver
Souza AM de, Celino DR, Ragi R, Romero MA. Current-voltage modeling of transistors based on two-dimensional molybdenum disulfide [Internet]. IEEE Access. 2025 ; 13 138112-138124.[citado 2026 fev. 13 ] Available from: http://dx.doi.org/10.1109/ACCESS.2025.3595055 - A physics-based analytical model for ballistic InSe nanotransistors
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Informações sobre o DOI: 10.1109/ACCESS.2025.3595055 (Fonte: oaDOI API)
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