A physics-based analytical model for ballistic InSe nanotransistors (2024)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; SOUZA, ADÉLCIO MARQUES DE - EESC ; CELINO, DANIEL RICARDO - EESC
- Unidade: EESC
- DOI: 10.1109/NANO61778.2024.10628708
- Subjects: NANOTECNOLOGIA; ELETRÔNICA; ENGENHARIA ELÉTRICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher place: Picataway, NJ, USA
- Date published: 2024
- Source:
- Título: Proceedings
- Conference titles: International Conference on Nanotechnology (NANO)
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SOUZA, Adelcio Marques de et al. A physics-based analytical model for ballistic InSe nanotransistors. 2024, Anais.. Picataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2024. Disponível em: https://dx.doi.org/10.1109/NANO61778.2024.10628708. Acesso em: 13 fev. 2026. -
APA
Souza, A. M. de, Celino, D. R., Ragi, R., & Romero, M. A. (2024). A physics-based analytical model for ballistic InSe nanotransistors. In Proceedings. Picataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1109/NANO61778.2024.10628708 -
NLM
Souza AM de, Celino DR, Ragi R, Romero MA. A physics-based analytical model for ballistic InSe nanotransistors [Internet]. Proceedings. 2024 ;[citado 2026 fev. 13 ] Available from: https://dx.doi.org/10.1109/NANO61778.2024.10628708 -
Vancouver
Souza AM de, Celino DR, Ragi R, Romero MA. A physics-based analytical model for ballistic InSe nanotransistors [Internet]. Proceedings. 2024 ;[citado 2026 fev. 13 ] Available from: https://dx.doi.org/10.1109/NANO61778.2024.10628708 - Analytical model for ballistic 2D nanotransistors
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Informações sobre o DOI: 10.1109/NANO61778.2024.10628708 (Fonte: oaDOI API)
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