Fully analytical compact model for the I-V characteristics of resonant tunneling diodes (2021)
- Authors:
- USP affiliated authors: ROMERO, MURILO ARAUJO - EESC ; CELINO, DANIEL RICARDO - EESC ; SOUZA, ADÉLCIO MARQUES DE - EESC ; PLAZAS, CAIO LUIZ MACHADO PEREIRA - EESC
- Unidade: EESC
- DOI: 10.1109/SBMicro50945.2021.9585749
- Subjects: POTENCIAL ELÉTRICO; CIRCUITOS ELETRÔNICOS; ENGENHARIA ELÉTRICA
- Agências de fomento:
- Language: Inglês
- Imprenta:
- Publisher: IEEE
- Publisher place: Piscataway, NJ, USA
- Date published: 2021
- Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro
- Este artigo NÃO possui versão em acesso aberto
-
Status: Nenhuma versão em acesso aberto identificada -
ABNT
CELINO, Daniel Ricardo et al. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes. 2021, Anais.. Piscataway, NJ, USA: IEEE, 2021. Disponível em: https://doi.org/10.1109/SBMicro50945.2021.9585749. Acesso em: 13 mar. 2026. -
APA
Celino, D. R., Souza, A. M. de, Plazas, C. L. M. P., Ragi, R., & Romero, M. A. (2021). Fully analytical compact model for the I-V characteristics of resonant tunneling diodes. In . Piscataway, NJ, USA: IEEE. doi:10.1109/SBMicro50945.2021.9585749 -
NLM
Celino DR, Souza AM de, Plazas CLMP, Ragi R, Romero MA. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes [Internet]. 2021 ;[citado 2026 mar. 13 ] Available from: https://doi.org/10.1109/SBMicro50945.2021.9585749 -
Vancouver
Celino DR, Souza AM de, Plazas CLMP, Ragi R, Romero MA. Fully analytical compact model for the I-V characteristics of resonant tunneling diodes [Internet]. 2021 ;[citado 2026 mar. 13 ] Available from: https://doi.org/10.1109/SBMicro50945.2021.9585749 - Double-RSOA colorless WDM-PON for 5G fronthaul applications
- Optimization of arrayed waveguide grating-filtering response for efficient analog radio-over-fiber fronthaul over a wavelength-division multiplexing passive optical network
- A physics-based RTD model accounting for space charge and phonon scattering effects
- A physics-based analytical model for ballistic InSe nanotransistors
- Analytical model for ballistic 2D nanotransistors
- Current-voltage modeling of transistors based on two-dimensional molybdenum disulfide
- Compact modeling of 2D nanotransistors: materials characteristics, device structures, and analytical techniques
- Analog radio-over-fiber fronthaul by a double cavity self-seeded WDM-PON
- Fully analytical compact model for the Q–V and C–V characteristics of cylindrical junctionless nanowire FETs
- Analog radio-over-fiber fronthaul by a WDM-PON employing double RSOA self-seeding and carrier-reuse techniques
Informações sobre a disponibilidade de versões do artigo em acesso aberto coletadas automaticamente via oaDOI API (Unpaywall).
Download do texto completo
| Tipo | Nome | Link | |
|---|---|---|---|
 |
Fully_Analytical_Compact_... |
How to cite
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
