Filtros : "ALVAREZ, INES PEREYRA DE" "Holanda" Removido: "Suécia" Limpar

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  • Source: Diamond & Related Materials. Unidades: EP, IF

    Subjects: MATERIAIS, ESTRUTURA DOS MATERIAIS, CRISTALOGRAFIA FÍSICA

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    • ABNT

      SILVA, C R S da et al. A first principles investigation on hypothetical crystalline phases of silicon oxycarbide. Diamond & Related Materials, v. 14, n. 3-7, p. 1142-1145, 2005Tradução . . Disponível em: https://doi.org/10.1016/j.diamond.2004.12.011. Acesso em: 08 out. 2024.
    • APA

      Silva, C. R. S. da, Justo Filho, J. F., Pereyra, I., & Assali, L. V. C. (2005). A first principles investigation on hypothetical crystalline phases of silicon oxycarbide. Diamond & Related Materials, 14( 3-7), 1142-1145. doi:10.1016/j.diamond.2004.12.011
    • NLM

      Silva CRS da, Justo Filho JF, Pereyra I, Assali LVC. A first principles investigation on hypothetical crystalline phases of silicon oxycarbide [Internet]. Diamond & Related Materials. 2005 ; 14( 3-7): 1142-1145.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/j.diamond.2004.12.011
    • Vancouver

      Silva CRS da, Justo Filho JF, Pereyra I, Assali LVC. A first principles investigation on hypothetical crystalline phases of silicon oxycarbide [Internet]. Diamond & Related Materials. 2005 ; 14( 3-7): 1142-1145.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/j.diamond.2004.12.011
  • Source: Journal of Non-Crystalline Solids. Unidades: IF, EP

    Subjects: FILMES FINOS, NANOTECNOLOGIA, ESTRUTURA DOS MATERIAIS

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    • ABNT

      ESCOBAR FORHAN, Neisy Amparo e FANTINI, Márcia Carvalho de Abreu e PEREYRA, Inés. Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application. Journal of Non-Crystalline Solids, v. 338-340, 2004Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXM-4CCFCKJ-1-8&_cdi=5594&_user=972067&_orig=browse&_coverDate=06%2F15%2F2004&_sk=996619999&view=c&wchp=dGLbVlz-zSkWz&md5=768c7876eb02ac94f3aa329920376045&ie=/sdarticle.pdf. Acesso em: 08 out. 2024.
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      Escobar Forhan, N. A., Fantini, M. C. de A., & Pereyra, I. (2004). Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application. Journal of Non-Crystalline Solids, 338-340. Recuperado de http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXM-4CCFCKJ-1-8&_cdi=5594&_user=972067&_orig=browse&_coverDate=06%2F15%2F2004&_sk=996619999&view=c&wchp=dGLbVlz-zSkWz&md5=768c7876eb02ac94f3aa329920376045&ie=/sdarticle.pdf
    • NLM

      Escobar Forhan NA, Fantini MC de A, Pereyra I. Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application [Internet]. Journal of Non-Crystalline Solids. 2004 ; 338-340[citado 2024 out. 08 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXM-4CCFCKJ-1-8&_cdi=5594&_user=972067&_orig=browse&_coverDate=06%2F15%2F2004&_sk=996619999&view=c&wchp=dGLbVlz-zSkWz&md5=768c7876eb02ac94f3aa329920376045&ie=/sdarticle.pdf
    • Vancouver

      Escobar Forhan NA, Fantini MC de A, Pereyra I. Nano-crystalline "Si IND.1-x" "C IND.x" :H thin films deposited by PECVD for SiC-on-insulator application [Internet]. Journal of Non-Crystalline Solids. 2004 ; 338-340[citado 2024 out. 08 ] Available from: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6TXM-4CCFCKJ-1-8&_cdi=5594&_user=972067&_orig=browse&_coverDate=06%2F15%2F2004&_sk=996619999&view=c&wchp=dGLbVlz-zSkWz&md5=768c7876eb02ac94f3aa329920376045&ie=/sdarticle.pdf
  • Source: Journal of Non-Crystalline Solids. Unidades: IF, EP

    Assunto: FILMES FINOS

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      PRADO, J. R et al. Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H. Journal of Non-Crystalline Solids, v. 330, n. 1-3, p. 196-215, 2003Tradução . . Disponível em: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5594&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0f8f94222ce407d33f3e1442abef58bd/. Acesso em: 08 out. 2024.
    • APA

      Prado, J. R., D'Addio, T. F., Fantini, M. C. de A., Pereyra, I., & Flank, A. M. (2003). Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H. Journal of Non-Crystalline Solids, 330( 1-3), 196-215. Recuperado de http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5594&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0f8f94222ce407d33f3e1442abef58bd/
    • NLM

      Prado JR, D'Addio TF, Fantini MC de A, Pereyra I, Flank AM. Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H [Internet]. Journal of Non-Crystalline Solids. 2003 ; 330( 1-3): 196-215.[citado 2024 out. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5594&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0f8f94222ce407d33f3e1442abef58bd/
    • Vancouver

      Prado JR, D'Addio TF, Fantini MC de A, Pereyra I, Flank AM. Annealing effects of highly homogeneous a-'Si IND. 1-x''C IND. x': H [Internet]. Journal of Non-Crystalline Solids. 2003 ; 330( 1-3): 196-215.[citado 2024 out. 08 ] Available from: http://www.sciencedirect.com/science?_ob=JournalURL&_cdi=5594&_auth=y&_acct=C000049650&_version=1&_urlVersion=0&_userid=972067&md5=0f8f94222ce407d33f3e1442abef58bd/
  • Source: Journal of Non-Crystalline Solids. Unidades: IF, EP

    Subjects: MATÉRIA CONDENSADA (PROPRIEDADES MECÂNICAS), MATERIAIS, MATERIAIS, SEMICONDUTORES

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    • ABNT

      SCOPEL, Wanderla Luis et al. Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition. Journal of Non-Crystalline Solids, v. 288, n. 1-3, p. 88-95, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0022-3093(01)00608-1. Acesso em: 08 out. 2024.
    • APA

      Scopel, W. L., Cuzinatto, R. R., Tabacniks, M. H., Fantini, M. C. de A., Alayo Chávez, M. I., & Pereyra, I. (2001). Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition. Journal of Non-Crystalline Solids, 288( 1-3), 88-95. doi:10.1016/s0022-3093(01)00608-1
    • NLM

      Scopel WL, Cuzinatto RR, Tabacniks MH, Fantini MC de A, Alayo Chávez MI, Pereyra I. Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition [Internet]. Journal of Non-Crystalline Solids. 2001 ; 288( 1-3): 88-95.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/s0022-3093(01)00608-1
    • Vancouver

      Scopel WL, Cuzinatto RR, Tabacniks MH, Fantini MC de A, Alayo Chávez MI, Pereyra I. Chemical and morphological properties of amorphous silicon oxynitride films deposited by plasma enhanced chemical vapor deposition [Internet]. Journal of Non-Crystalline Solids. 2001 ; 288( 1-3): 88-95.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/s0022-3093(01)00608-1
  • Source: Journal of Non-Crystalline Solids. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      PEREYRA, Inés e ALAYO CHÁVEZ, Marco Isaías. High quality low temperature DPECVD silicon dioxide. Journal of Non-Crystalline Solids, v. 212, n. ju 1997, p. 225-231, 1997Tradução . . Disponível em: https://doi.org/10.1016/s0022-3093(96)00650-3. Acesso em: 08 out. 2024.
    • APA

      Pereyra, I., & Alayo Chávez, M. I. (1997). High quality low temperature DPECVD silicon dioxide. Journal of Non-Crystalline Solids, 212( ju 1997), 225-231. doi:10.1016/s0022-3093(96)00650-3
    • NLM

      Pereyra I, Alayo Chávez MI. High quality low temperature DPECVD silicon dioxide [Internet]. Journal of Non-Crystalline Solids. 1997 ; 212( ju 1997): 225-231.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/s0022-3093(96)00650-3
    • Vancouver

      Pereyra I, Alayo Chávez MI. High quality low temperature DPECVD silicon dioxide [Internet]. Journal of Non-Crystalline Solids. 1997 ; 212( ju 1997): 225-231.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/s0022-3093(96)00650-3
  • Source: Journal of Non-Crystalline Solids. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

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      PEREYRA, Inés e PAEZ CARREÑO, Marcelo Nelson. Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions. Journal of Non-Crystalline Solids, v. 201, n. ju 1996, p. 110-118, 1996Tradução . . Disponível em: https://doi.org/10.1016/0022-3093(96)00131-7. Acesso em: 08 out. 2024.
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      Pereyra, I., & Paez Carreño, M. N. (1996). Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions. Journal of Non-Crystalline Solids, 201( ju 1996), 110-118. doi:10.1016/0022-3093(96)00131-7
    • NLM

      Pereyra I, Paez Carreño MN. Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions [Internet]. Journal of Non-Crystalline Solids. 1996 ; 201( ju 1996): 110-118.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/0022-3093(96)00131-7
    • Vancouver

      Pereyra I, Paez Carreño MN. Wide gap a-Sil-Cx:H thin films obtained under starving plasm deposition conditions [Internet]. Journal of Non-Crystalline Solids. 1996 ; 201( ju 1996): 110-118.[citado 2024 out. 08 ] Available from: https://doi.org/10.1016/0022-3093(96)00131-7

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